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IXFK32N80Q3

IXFK32N80Q3
Mfr. #:
IXFK32N80Q3
制造商:
Littelfuse
描述:
MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
生命周期:
制造商新产品。
数据表:
IXFK32N80Q3 数据表
交货:
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支付:
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HTML Datasheet:
IXFK32N80Q3 DatasheetIXFK32N80Q3 Datasheet (P4-P5)
ECAD Model:
更多信息:
IXFK32N80Q3 更多信息
产品属性
属性值
制造商：
IXYS
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-264-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
800 V
Id - 连续漏极电流：
32 A
Rds On - 漏源电阻：
270 mOhms
Vgs - 栅源电压：
30 V
Qg - 门电荷：
140 nC
最高工作温度：
+ 150 C
Pd - 功耗：
1 kW
配置：
单身的
商品名：
高功率场效应晶体管
打包：
管子
系列：
IXFK32N80
晶体管类型：
1 N-Channel
品牌：
IXYS
产品类别：
MOSFET
上升时间：
300 ns
出厂包装数量：
25
子类别：
MOSFET
单位重量：
0.264555 oz
Tags
IXFK32N, IXFK32, IXFK3, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
***i-Key
MOSFET N-CH 800V 32A TO264AA
***emi
N-Channel Power MOSFET, QFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br); Available until stocks are exhausted
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
***hard Electronics
STMICROELECTRONICS 2STA1943Bipolar (BJT) Single Transistor, PNP, 230 V, 30 MHz, 150 W, 8 A, 80
***ure Electronics
2STA1943 Series PNP 230 V 15 A Epitaxial Planar Bipolar Transistor - TO-264
***icroelectronics
High power PNP epitaxial planar bipolar transistor
***ical
Trans GP BJT PNP 230V 15A 3-Pin TO-264 Tube
*** Electronic Components
Bipolar Transistors - BJT High Pwr PNP BiPolar Trans
***r Electronics
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
***ment14 APAC
Transistor, PNP TO-264; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency ft:30MHz; Power Dissipation Pd:150W;
***nell
TRANSISTOR, PNP TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 230V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 150W; DC Collector Current: 8A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 3V; Continuous Collector Current Ic Max: 15A; Current Ic Continuous a Max: 8A; Current Ic hFE: 1A; Device Marking: 2STA1943; Gain Bandwidth ft Typ: 30MHz; Hfe Min: 80; Power Dissipation Ptot Max: 150W; Termination Type: Through Hole; Voltage Vcbo: 230V
***icroelectronics
High power PNP epitaxial planar bipolar transistor
*** Electronics
STMICROELECTRONICS 2STA2121Bipolar (BJT) Single Transistor, PNP, -250 V, 25 MHz, 220 W, -17 A, 80
***ical
Trans GP BJT PNP 250V 17A 3-Pin TO-264 Tube
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT PNP Power Transisto
***nell
TRANS PNP 250V 17A BIT-LA TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -250V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 220W; DC Collector Current: -17A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): -3V; Current Ic Continuous a Max: -8A; Gain Bandwidth ft Typ: 25MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Through Hole; Transistor Type: Power Bipolar
***hard Electronics
Trans MOSFET N-CH 400V 50A 3-Pin(3+Tab) TO-264 Rail
***ser
MOSFETs 400V N-Channel QFET
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
型号 制造商 描述 库存 价格
IXFK32N80Q3
DISTI # IXFK32N80Q3-ND		IXYS CorporationMOSFET N-CH 800V 32A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube		50In Stock
  • 100:$16.3200
  • 25:$17.7600
  • 1:$21.1200
IXFK32N80Q3
DISTI # 747-IXFK32N80Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
RoHS: Compliant		0
  • 1:$24.2900
  • 10:$22.0800
  • 25:$20.4200
  • 50:$18.7900
  • 100:$18.3300
  • 250:$16.8000
  • 500:$15.2500
图片 型号 描述
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IXFK32N60C

Mfr.#: IXFK32N60C

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 200V/300A ULTRA JUNCTION X3-CLAS
IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P-IXYS-CORPORATION

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IXFK35N50

Mfr.#: IXFK35N50

OMO.#: OMO-IXFK35N50-IXYS-CORPORATION

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IXFK38N80Q2

Mfr.#: IXFK38N80Q2

OMO.#: OMO-IXFK38N80Q2-IXYS-CORPORATION

 MOSFET 38 Amps 800V 0.22 Rds
IXFK360N10T

Mfr.#: IXFK360N10T

OMO.#: OMO-IXFK360N10T-IXYS-CORPORATION

 MOSFET N-CH 100V 360A TO-264
可用性
库存:
Available
订购:
3000
输入数量:
IXFK32N80Q3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$24.29
US$24.29
10
US$22.08
US$220.80
25
US$20.42
US$510.50
50
US$18.79
US$939.50
100
US$18.33
US$1 833.00
250
US$16.80
US$4 200.00
500
US$15.25
US$7 625.00
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