IDW40G120C5BFKSA1

Mfr. #:: IDW40G120C5BFKSA1
制造商:: Infineon Technologies
描述:: Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
生命周期:: 制造商新产品。
数据表:: IDW40G120C5BFKSA1 数据表
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更多信息:: IDW40G120C5BFKSA1 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: 二极管、整流器 - 单

产品: 肖特基碳化硅二极管

打包: 管子

部分别名: IDW40G120C5B SP001020714

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

技术: 碳化硅

配置: 双阳极共阴极

钯功耗: 402 W

最高工作温度: + 175 C

最低工作温度: - 55 C

Vf-正向电压: 1.4 V

Vr-反向电压: 1.2 kV

Ir-反向电流: 23 uA

如果正向电流: 40 A

Vrrm 重复反向电压: 1.2 kV

Ifsm-正向浪涌电流: 290 A

Tags: IDW40G1, IDW40G, IDW4, IDW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IDW40G120C5BFKSA1 描述

***ure Electronics: IDW40G120C5B Series 1200V 110A 5th Generation ThinQ!SiC Schottky Diode-TO-247-3

***ical: Diode Schottky 1.2KV 110A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Diode Schottky 1.2KV 110A 3-Pin TO-247 Tube

***an P&S: 1200V,40A,Silicon Carbide Schottky Diode

***i-Key: DIODE GEN PURP 1200V 55A TO247-3

***ukat: SiC-Schottky 1200V 40A(2x20) TO247

***ronik: SiC-D 1200 40A 1,4V TO247-3

***ark: Silicon Carbide Schottky Diode, 1.2Kv; Product Range:thinq Series; Diode Configuration:common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:110A; Total Capacitive Charge Qc:202Nc; Diode Case Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. SILICON CARBIDE SCHOTTKY DIODE, 1.2KV; Product Range:thinQ Series; Diode Configuration:Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:110A; Total Capacitive Charge Qc:202nC; Diode Case Style:TO-247; No. of Pins:3 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):110A; Forward Surge Current Ifsm Max:145A; Forward Voltage VF Max:1.65V; Operating Temperature Max:175°C; Semiconductor Technology:SiC

***nell: DIODO SCHOTTKY CARB. SILICIO, 1.2KV; Gamma Prodotti:thinQ Series; Configurazione Diodo:Catodo Comune; Tensione Inversa Ripetitiva Vrrm Max:1.2kV; Corrente Diretta Continua If:110A; Potenza Reattiva Capacitiva Qc:202nC; Modello Involucro Diodo:TO-247; Numero di Pin:3 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Diretta If(AV):110A; Corrente di Picco Diretta Ifsm Max:145A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.65V

***ineon: With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives

IDW40G120C5BFKSA1 更多信息

CoolSiC™ Schottky Diodes: Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.

Gen 5 1200V CoolSiC™ Schottky Diodes: Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.

Market price

型号	制造商	描述	库存	价格
IDW40G120C5BFKSA1 DISTI # V99:2348_06377009	Infineon Technologies AG	Diode Schottky 1.2KV 110A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	134	500:$20.8100 250:$21.7200 100:$21.8600 25:$24.8299 10:$25.8299 5:$27.4400 1:$27.7400
IDW40G120C5BFKSA1 DISTI # IDW40G120C5BFKSA1-ND	Infineon Technologies AG	DIODE GEN PURP 1200V 55A TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	256In Stock	10:$32.0560 1:$34.5100
IDW40G120C5BFKSA1 DISTI # 30341104	Infineon Technologies AG	Diode Schottky 1.2KV 110A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	134	100:$21.8600 25:$24.8298 10:$25.8298 5:$27.4400 1:$27.7400
IDW40G120C5BFKSA1 DISTI # IDW40G120C5BFKSA1	Infineon Technologies AG	Diode Schottky 1.2KV 110A 3-Pin TO-247 Tube - Rail/Tube (Alt: IDW40G120C5BFKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	240:$22.3900 480:$21.5900 960:$20.7900 1440:$20.0900 2400:$19.6900
IDW40G120C5BFKSA1 DISTI # SP001020714	Infineon Technologies AG	Diode Schottky 1.2KV 110A 3-Pin TO-247 Tube (Alt: SP001020714) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€23.9900 10:€21.9900 25:€21.0900 50:€20.2900 100:€19.5900 500:€18.8900 1000:€17.5900
IDW40G120C5BFKSA1 DISTI # 97Y1812	Infineon Technologies AG	SILICON CARBIDE SCHOTTKY DIODE, 1.2KV,Product Range:thinQ Series,Diode Configuration:Common Cathode,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:110A,Total Capacitive Charge Qc:202nC,Diode Case , RoHS Compliant: Yes	234	1:$35.1400 5:$34.8200 10:$32.7100 25:$31.4100 50:$29.9500 100:$28.4900 250:$27.3600
IDW40G120C5BFKSA1 DISTI # 726-IDW40G120C5BFKSA	Infineon Technologies AG	Schottky Diodes & Rectifiers SIC CHIP/DISCRETE RoHS: Compliant	287	1:$30.0500 5:$29.7400 10:$27.7200 25:$26.4700 100:$23.6700 250:$22.5800
IDW40G120C5BFKSA1 DISTI # IDW40G120C5BFKSA1	Infineon Technologies AG	Diode: Schottky rectifying,SiC,THT,1.2kV,2x20A,402W,Ir:23uA	38	1:$34.8000 3:$31.2700 10:$29.2200
IDW40G120C5BFKSA1 DISTI # IDW40G120C5B	Infineon Technologies AG	SiC-Schottky 1200V 40A(2x20) TO247 RoHS: Compliant	30	1:€25.3000 25:€21.3000 100:€19.3000 200:€18.5500
IDW40G120C5BFKSA1 DISTI # 2617416	Infineon Technologies AG	SILICON CARBIDE SCHOTTKY DIODE, 1.2KV RoHS: Compliant	240	1:£22.9600 5:£22.7300 10:£20.2300 50:£18.7400 100:£17.2500
IDW40G120C5BFKSA1 DISTI # C1S322000567328	Infineon Technologies AG	Rectifier Diodes RoHS: Compliant	134	100:$21.8600 25:$24.8298 10:$25.8200 5:$27.4400 1:$27.7400
IDW40G120C5BFKSA1 DISTI # 2617416	Infineon Technologies AG	SILICON CARBIDE SCHOTTKY DIODE, 1.2KV RoHS: Compliant	234	1:$49.9300 10:$46.0500

图片	型号	描述
	Mfr.#: IDW40G120C5BFKSA1 OMO.#: OMO-IDW40G120C5BFKSA1	Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
	Mfr.#: IDW40G120C5B OMO.#: OMO-IDW40G120C5B-1190	Diode SiC Schottky 1200V 110A 3-Pin TO-247 Tube (Alt: IDW40G120C5B)
	Mfr.#: IDW40G120C5B D4012B5 OMO.#: OMO-IDW40G120C5B-D4012B5-1190	全新原装
	Mfr.#: IDW40G120C5BFKSA1 OMO.#: OMO-IDW40G120C5BFKSA1-INFINEON-TECHNOLOGIES	Schottky Diodes & Rectifiers SIC CHIP/DISCRETE

IDW40G120C5BFKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes