DMN53D0LDW-13

Mfr. #:: DMN53D0LDW-13
制造商:: Diodes Incorporated
描述:: MOSFET N-CHANNEL MOSFET
生命周期:: 制造商新产品。
数据表:: DMN53D0LDW-13 数据表
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ECAD Model:
更多信息:: DMN53D0LDW-13 更多信息

产品属性
属性值

制造商: 二极管公司

产品分类: FET - 阵列

系列: DMN53

打包: 卷带 (TR) 替代包装

单位重量: 0.000212 oz

安装方式: 贴片/贴片

包装盒: 6-TSSOP, SC-88, SOT-363

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: SOT-363

配置: 双重的

FET型: 2 N-Channel (Dual)

最大功率: 310mW

晶体管型: 2 N-Channel

漏源电压 Vdss: 50V

输入电容-Ciss-Vds: 46pF @ 25V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 360mA

Rds-On-Max-Id-Vgs: 1.6 Ohm @ 500mA, 10V

Vgs-th-Max-Id: 1.5V @ 250μA

栅极电荷-Qg-Vgs: 0.6nC @ 4.5V

钯功耗: 310 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 11 ns

上升时间: 2.5 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 360 mA

Vds-漏-源-击穿电压: 50 V

VGS-th-Gate-Source-Threshold-Voltage: 1.5 V

Rds-On-Drain-Source-Resistance: 4.5 Ohms

晶体管极性: N通道

典型关断延迟时间: 19 ns

典型开启延迟时间: 2.7 ns

Qg-门电荷: 0.6 nC

通道模式: 增强

Tags: DMN53D0L, DMN53, DMN5, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMN53D0LDW-13 描述

***et: Transistor MOSFET Array Dual N-CH 50V 360mA 6-Pin SOT-363 T/R

***ical: Trans MOSFET N-CH 50V 0.36A Automotive 6-Pin SOT-363 T/R

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

DMN53D0LDW-13 更多信息

DMN53xx N-Channel Enhancement Mode MOSFETs: Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON) while maintaining superior switching performance. ESD protected to 2KV, these new generation MOSFETs feature low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speeds, and low input/output leakage. Qualified to AEC-Q101 Standards for High Reliability, DMN53xx N-Channel Enhancement Mode MOSFETs are ideal for high-efficiency power management applications.

Diodes Inc. DMNxx MOSFETs: Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.

Market price

型号	制造商	描述	库存	价格
DMN53D0LDW-13 DISTI # DMN53D0LDW-13DICT-ND	Diodes Incorporated	MOSFET 2N-CH 50V 0.36A SOT363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9990In Stock	1000:$0.0832 500:$0.1223 100:$0.2284 10:$0.4080 1:$0.4500
DMN53D0LDW-13 DISTI # DMN53D0LDW-13DIDKR-ND	Diodes Incorporated	MOSFET 2N-CH 50V 0.36A SOT363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9990In Stock	1000:$0.0832 500:$0.1223 100:$0.2284 10:$0.4080 1:$0.4500
DMN53D0LDW-13 DISTI # DMN53D0LDW-13DITR-ND	Diodes Incorporated	MOSFET 2N-CH 50V 0.36A SOT363 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	On Order	10000:$0.0539
DMN53D0LDW-13 DISTI # DMN53D0LDW-13	Diodes Incorporated	2N7002 FAMILY SOT363 T&R 10K - Tape and Reel (Alt: DMN53D0LDW-13) RoHS: Not Compliant Min Qty: 10000 Container: Reel	Americas - 0	10000:$0.0369 20000:$0.0352 40000:$0.0335 60000:$0.0320 100000:$0.0313
DMN53D0LDW-7 DISTI # 621-DMN53D0LDW-7	Diodes Incorporated	MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs RoHS: Compliant	28616	1:$0.3900 10:$0.2590 100:$0.1080 1000:$0.0740 3000:$0.0580
DMN53D0LDW-13 DISTI # 621-DMN53D0LDW-13	Diodes Incorporated	MOSFET N-CHANNEL MOSFET RoHS: Compliant	0	10000:$0.0490

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