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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSC886N03LS G DISTI # BSC886N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R - Bulk (Alt: BSC886N03LS G) RoHS: Compliant Min Qty: 1924 Container: Bulk | Americas - 0 |
|
| BSC886N03LS G DISTI # BSC886N03LSG | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R - Bulk (Alt: BSC886N03LSG) RoHS: Not Compliant Min Qty: 1471 Container: Bulk | Americas - 0 |
|
| BSC886N03LS G DISTI # SP000475950 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R (Alt: SP000475950) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSC886N03LSGXT DISTI # BSC886N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC886N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC886N03LS G DISTI # 726-BSC886N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 65A TDSON-8 RoHS: Compliant | 0 |
|
| BSC886N03LS G | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 5000 |
|
| BSC886N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 9609 |
|
| BSC886N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 4825 |
|
| BSC886N03LSG | Infineon Technologies AG | 1500 | ||
| BSC886N03LSG | Infineon Technologies AG | 5000 | ||
| BSC886N03LSGATMA1 DISTI # 2617422 | Infineon Technologies AG | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant | 4906 |
|
| BSC886N03LSGATMA1 DISTI # 2617422 | Infineon Technologies AG | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 | 4906 |
|
| BSC886N03LS G DISTI # C1S322000282117 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R RoHS: Compliant | 10000 |
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| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: 886N03LS OMO.#: OMO-886N03LS-1190 |
全新原装 |
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Mfr.#: 886N03LS/BSC886N03LS |
全新原装 |
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Mfr.#: 886N03LSG OMO.#: OMO-886N03LSG-1190 |
全新原装 |
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Mfr.#: 886N931 OMO.#: OMO-886N931-1190 |
全新原装 |