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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| IPS075N03LGAKMA1 DISTI # IPS075N03LGAKMA1-ND | Infineon Technologies AG | MOSFET N-CH 30V 50A TO251-3-11 RoHS: Compliant Min Qty: 1500 Container: Tube | Limited Supply - Call | |
| IPS075N03LGBKMA1 DISTI # IPS075N03LGBKMA1-ND | Infineon Technologies AG | MOSFET N-CHANNEL 30V 50A TO251-3 RoHS: Compliant Container: Tube | Limited Supply - Call | |
| IPS075N03L G DISTI # IPS075N03LG | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin TO-251 Tube - Bulk (Alt: IPS075N03LG) Min Qty: 1667 Container: Bulk | Americas - 0 |
|
| IPS075N03LGAKMA1 DISTI # IPS075N03LGAKMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin TO-251 Tube - Bulk (Alt: IPS075N03LGAKMA1) Min Qty: 1667 Container: Bulk | Americas - 0 |
|
| IPS075N03L G DISTI # 726-IPS075N03LG | Infineon Technologies AG | MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3 RoHS: Compliant | 0 | |
| IPS075N03LGAKMA1 DISTI # N/A | Infineon Technologies AG | MOSFET LV POWER MOS | 0 | |
| IPS075N03LG | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant | 42 |
|
| IPS075N03LGAKMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant | 22500 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: IPS075N03LGBKMA1 |
MOSFET N-CHANNEL 30V 50A TO251-3 |
|
|
Mfr.#: IPS075N03L G OMO.#: OMO-IPS075N03L-G-1190 |
Trans MOSFET N-CH 30V 50A 3-Pin TO-251 Tube - Bulk (Alt: IPS075N03LG) |
|
|
Mfr.#: IPS075N03LG OMO.#: OMO-IPS075N03LG-1190 |
Power Field-Effect Transistor, 50A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 |
|
Mfr.#: IPS075N03LGAKMA1 |
MOSFET N-CH 30V 50A TO251-3-11 |
|
|
Mfr.#: IPS07N60C3 OMO.#: OMO-IPS07N60C3-1190 |
全新原装 |