IGW40N65F5FKSA1

IGW40N65F5FKSA1
Mfr. #:
IGW40N65F5FKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命周期:
制造商新产品。
数据表:
IGW40N65F5FKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IGW40N65F5FKSA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-247-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
650 V
集电极-发射极饱和电压:
1.6 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
74 A
Pd - 功耗:
250 W
最低工作温度:
- 40 C
最高工作温度:
+ 175 C
系列:
TRENCHSTOP 5 F5
打包:
管子
品牌:
英飞凌科技
栅极-发射极漏电流:
100 nA
产品类别:
IGBT晶体管
出厂包装数量:
240
子类别:
IGBT
商品名:
战壕
第 # 部分别名:
IGW40N65F5 SP000973424
单位重量:
1.340411 oz
Tags
IGW40N65F, IGW40N65, IGW40N6, IGW40N, IGW40, IGW4, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    C***n
    C***n
    NL

    all right.

    2019-04-05
    K***v
    K***v
    RU

    Great store not the first time i order from this seller

    2019-03-07
***Components
In a Tube of 30, Infineon IGW40N65F5FKSA1 IGBT, 40 A 650 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 74A 250000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 74A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube
***ure Electronics
650V, 74A IGBT TO247-3 Package
***i-Key
IGBT 650V 74A 255W PG-TO247-3
***ronik
IGBT 650V 40A 1.65V TO247-3
***ark
IGBT, 650V, 40A, TO247-3
***ukat
650V 74A 255W TO247
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 40A, TO247-3; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:255W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT
***nell
IGBT, 650V, 40A, TO247-3; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:255W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
型号 制造商 描述 库存 价格
IGW40N65F5FKSA1
DISTI # V99:2348_06377719
Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
240
  • 500:$1.8880
  • 250:$2.0960
  • 100:$2.1730
  • 10:$2.5520
  • 1:$3.2956
IGW40N65F5FKSA1
DISTI # V36:1790_06377719
Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5FKSA1-ND
    Infineon Technologies AGIGBT 650V 74A 255W PG-TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    230In Stock
    • 2640:$1.9424
    • 720:$2.4182
    • 240:$2.8407
    • 25:$3.2776
    • 10:$3.4670
    • 1:$3.8600
    IGW40N65F5FKSA1
    DISTI # 32372445
    Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    240
    • 500:$1.8880
    • 250:$2.0960
    • 100:$2.1730
    • 10:$2.5520
    • 4:$2.9960
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5FKSA1
    Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube - Bulk (Alt: IGW40N65F5FKSA1)
    RoHS: Compliant
    Min Qty: 209
    Container: Bulk
    Americas - 0
    • 1045:$1.4900
    • 2090:$1.4900
    • 418:$1.5900
    • 627:$1.5900
    • 209:$1.6900
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5FKSA1
    Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW40N65F5FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube
    Americas - 0
    • 1440:$1.6900
    • 2400:$1.6900
    • 960:$1.7900
    • 240:$1.8900
    • 480:$1.8900
    IGW40N65F5FKSA1
    DISTI # SP000973424
    Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube (Alt: SP000973424)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€1.3900
    • 500:€1.4900
    • 50:€1.5900
    • 100:€1.5900
    • 25:€1.6900
    • 10:€1.7900
    • 1:€1.8900
    IGW40N65F5FKSA1
    DISTI # 33X0399
    Infineon Technologies AGIGBT Single Transistor, 40 A, 1.6 V, 255 W, 650 V, TO-247, 3 RoHS Compliant: Yes0
    • 500:$1.9100
    • 250:$2.1200
    • 100:$2.2400
    • 50:$2.3600
    • 25:$2.4700
    • 10:$2.5900
    • 1:$3.0400
    IGW40N65F5FKSA1
    DISTI # 726-IGW40N65F5FKSA1
    Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
    RoHS: Compliant
    461
    • 1:$3.6700
    • 10:$3.1200
    • 100:$2.7000
    • 250:$2.5600
    • 500:$2.3000
    • 1000:$1.9900
    IGW40N65F5
    DISTI # 726-IGW40N65F5-ES
    Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
    RoHS: Compliant
    234
    • 1:$3.0100
    • 10:$2.5600
    • 100:$2.2200
    • 250:$2.1000
    • 500:$1.8900
    IGW40N65F5FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel
    RoHS: Compliant
    25
    • 1000:$1.5800
    • 500:$1.6600
    • 100:$1.7300
    • 25:$1.8100
    • 1:$1.9400
    IGW40N65F5FKSA1
    DISTI # 1107425P
    Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 650V 40A TO247, TU356
    • 200:£1.6680
    • 80:£1.7300
    • 40:£1.8700
    • 12:£2.0980
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5FKSA1
    Infineon Technologies AGTransistor: IGBT,650V,74A,250W,TO247-3,Series: F516
    • 1:$3.5300
    • 3:$3.0600
    • 10:$2.4500
    • 30:$2.2000
    IGW40N65F5FKSA1
    DISTI # 2363277
    Infineon Technologies AGIGBT, 650V, 40A, TO247-3467
    • 500:£1.3800
    • 250:£1.5400
    • 100:£1.6200
    • 10:£1.8800
    • 1:£2.6200
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5
    Infineon Technologies AG650V 74A 255W TO247
    RoHS: Compliant
    485
    • 1:€5.4700
    • 10:€2.4700
    • 50:€1.4700
    • 100:€1.4100
    图片 型号 描述
    ICM7555CBAZ-T

    Mfr.#: ICM7555CBAZ-T

    OMO.#: OMO-ICM7555CBAZ-T

    Timers & Support Products GEN PUR CMOS TIMER 8 COM
    ICM7555CBAZ-T

    Mfr.#: ICM7555CBAZ-T

    OMO.#: OMO-ICM7555CBAZ-T-INTERSIL

    全新原装
    TWW5J10RE

    Mfr.#: TWW5J10RE

    OMO.#: OMO-TWW5J10RE-OHMITE

    Wirewound Resistors - Through Hole 5watt 10ohm 5% Vertical Mount
    SQMR510KJ

    Mfr.#: SQMR510KJ

    OMO.#: OMO-SQMR510KJ-TE-CONNECTIVITY-AMP

    Metal Film Resistors - Through Hole 10 KOhms 5W 300PPM
    可用性
    库存:
    461
    订购:
    2444
    输入数量:
    IGW40N65F5FKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$3.67
    US$3.67
    10
    US$3.12
    US$31.20
    100
    US$2.70
    US$270.00
    250
    US$2.56
    US$640.00
    500
    US$2.30
    US$1 150.00
    1000
    US$1.99
    US$1 990.00
    从...开始
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