CGH40045F

CGH40045F
Mfr. #:
CGH40045F
制造商:
N/A
描述:
RF JFET Transistors GaN HEMT DC-4.0GHz, 45 Watt
生命周期:
制造商新产品。
数据表:
CGH40045F 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
CGH40045F 更多信息
产品属性
属性值
制造商:
克里公司
产品分类:
射频 JFET 晶体管
RoHS:
Y
晶体管类型:
HEMT
技术:
氮化镓
获得:
14 dB
晶体管极性:
N通道
Vds - 漏源击穿电压:
120 V
Vgs - 栅源击穿电压:
- 10 V to 2 V
Id - 连续漏极电流:
6 A
输出功率:
55 W
最大漏栅电压:
-
最低工作温度:
- 40 C
最高工作温度:
+ 150 C
Pd - 功耗:
-
安装方式:
螺丝安装
包装/案例:
440193
打包:
管子
应用:
-
配置:
单身的
高度:
4.19 mm
长度:
20.45 mm
工作频率:
2 GHz to 4 GHz
工作温度范围:
-
产品:
氮化镓 HEMT
宽度:
5.97 mm
品牌:
Wolfspeed / 克里
正向跨导 - 最小值:
-
栅源截止电压:
-
班级:
-
开发套件:
CGH40045F-TB
秋季时间:
-
NF - 噪声系数:
-
P1dB - 压缩点:
-
产品类别:
射频 JFET 晶体管
Rds On - 漏源电阻:
-
上升时间:
-
出厂包装数量:
120
子类别:
晶体管
典型关断延迟时间:
-
Vgs th - 栅源阈值电压:
- 3 V
Tags
CGH40045F, CGH4004, CGH400, CGH40, CGH4, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nsix Microsemi
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET
***ical
Trans RF MOSFET N-CH 120V 6A 3-Pin Case 440193
***o-Tech
CGH40045F - 45W, RF Power GaN HEMT (Flange Package)
***fspeed SCT
Aerospace & Defense, 28 V, 4 GHz, 45W, Flange, RoHS
***i-Key
TRANS 45W RF GAN HEMT 440193 PKG
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
型号 制造商 描述 库存 价格
CGH40045F
DISTI # V36:1790_22404196
Cree, Inc.Trans FET N-CH 84V GaN HEMT 3-Pin Case 4401930
    CGH40045F
    DISTI # CGH40045F-ND
    WolfspeedRF MOSFET HEMT 28V 440193
    RoHS: Compliant
    Min Qty: 1
    Container: Tray
    659In Stock
    • 1:$148.6800
    CGH40045F-TB
    DISTI # CGH40045F-TB-ND
    WolfspeedBOARD DEMO AMP CIRCUIT CGH40045
    RoHS: Not compliant
    Min Qty: 1
    Container: Bulk
    1In Stock
    • 1:$550.0000
    CGH40045F
    DISTI # 941-CGH40045F
    Cree, Inc.RF JFET Transistors GaN HEMT DC-4.0GHz, 45 Watt
    RoHS: Compliant
    119
    • 1:$166.8200
    CGH40045F-TB
    DISTI # 941-CGH40045F-TB
    Cree, Inc.RF Development Tools Test Board without GaN HEMT
    RoHS: Not compliant
    2
    • 1:$632.5000
    CGH40045FCree, Inc. 20
      CGH40045F
      DISTI # CGH40045F
      WolfspeedRF POWER TRANSISTOR
      RoHS: Compliant
      107
      • 1:$182.3800
      CGH40045F-TB
      DISTI # CGH40045F-TB
      WolfspeedRF TRANSISTOR TEST FIXTURE
      RoHS: Compliant
      2
      • 1:$632.5000
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      可用性
      库存:
      119
      订购:
      2102
      输入数量:
      CGH40045F的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$166.82
      US$166.82
      由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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