CSD13201W10

CSD13201W10
Mfr. #:
CSD13201W10
描述:
Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R
生命周期:
制造商新产品。
数据表:
CSD13201W10 数据表
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CSD13201W10 更多信息 CSD13201W10 Product Details
产品属性
属性值
制造商
德州仪器
产品分类
FET - 单
系列
场效应管
打包
Digi-ReelR 替代包装
安装方式
贴片/贴片
商品名
场效应管
包装盒
4-UFBGA, DSBGA
技术
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
1 Channel
供应商-设备-包
4-DSBGA (1x1)
配置
单身的
FET型
MOSFET N 沟道,金属氧化物
最大功率
1.2W
晶体管型
1 N-Channel
漏源电压 Vdss
12V
输入电容-Ciss-Vds
462pF @ 6V
FET-Feature
标准
Current-Continuous-Drain-Id-25°C
1.6A (Ta)
Rds-On-Max-Id-Vgs
34 mOhm @ 1A, 4.5V
Vgs-th-Max-Id
1.1V @ 250μA
栅极电荷-Qg-Vgs
2.9nC @ 4.5V
钯功耗
1.2 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
9.7 ns
上升时间
5.9 ns
VGS-栅极-源极-电压
8 V
Id 连续漏极电流
1.6 A
Vds-漏-源-击穿电压
12 V
VGS-th-Gate-Source-Threshold-Voltage
800 mV
Rds-On-Drain-Source-Resistance
34 mOhms
晶体管极性
N通道
典型关断延迟时间
14.4 ns
典型开启延迟时间
3.9 ns
Qg-门电荷
2.3 nC
正向跨导最小值
23 S
通道模式
增强
Tags
CSD132, CSD13, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
12V, N ch NexFET MOSFET™, single WLP 1.0x1.0, 34mOhm 4-DSBGA -55 to 150
***p One Stop Global
Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R
***i-Key
MOSFET N-CH 12V 1.6A 4DSBGA
***ark
12V N Ch Mosfet
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
型号 描述 库存 价格
CSD13201W10
DISTI # V72:2272_07248711
Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R
RoHS: Compliant
234
  • 100:$0.1918
  • 25:$0.3164
  • 10:$0.3515
  • 1:$0.4655
CSD13201W10
DISTI # 296-41412-1-ND
MOSFET N-CH 12V 1.6A 4DSBGA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
189531In Stock
  • 1000:$0.1713
  • 500:$0.2284
  • 100:$0.3331
  • 10:$0.4850
  • 1:$0.6200
CSD13201W10
DISTI # 296-41412-6-ND
MOSFET N-CH 12V 1.6A 4DSBGA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
189531In Stock
  • 1000:$0.1713
  • 500:$0.2284
  • 100:$0.3331
  • 10:$0.4850
  • 1:$0.6200
CSD13201W10
DISTI # 296-41412-2-ND
MOSFET N-CH 12V 1.6A 4DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
186000In Stock
  • 15000:$0.1340
  • 6000:$0.1432
  • 3000:$0.1525
CSD13201W10
DISTI # 25768664
Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R
RoHS: Compliant
234
  • 100:$0.1918
  • 60:$0.3164
CSD13201W10
DISTI # CSD13201W10
Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R - Tape and Reel (Alt: CSD13201W10)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.1269
  • 6000:$0.1219
  • 12000:$0.1179
  • 18000:$0.1129
  • 30000:$0.1079
CSD13201W10
DISTI # CSD13201W10
Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R (Alt: CSD13201W10)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    CSD13201W10N-Channel NexFET&#153,Power MOSFET5765
    • 1000:$0.1000
    • 750:$0.1100
    • 500:$0.1300
    • 250:$0.1600
    • 100:$0.1800
    • 25:$0.2100
    • 10:$0.2200
    • 1:$0.2500
    CSD13201W10
    DISTI # 595-CSD13201W10
    MOSFET N-CH NexFET Pwr MOSFET
    RoHS: Compliant
    33222
    • 1:$0.4900
    • 10:$0.3700
    • 100:$0.2020
    • 1000:$0.1520
    • 3000:$0.1310
    • 9000:$0.1220
    • 24000:$0.1120
    CSD13201W10
    DISTI # C1S746203525749
    Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R
    RoHS: Compliant
    234
    • 100:$0.1918
    • 25:$0.3164
    图片 型号 描述
    CSD13381F4

    Mfr.#: CSD13381F4

    OMO.#: OMO-CSD13381F4

    MOSFET 12V N-CH Pwr MOSFET
    CSD13306WT

    Mfr.#: CSD13306WT

    OMO.#: OMO-CSD13306WT

    MOSFET 12V N-Channel NexFET Power MOSFET
    CSD13202Q2

    Mfr.#: CSD13202Q2

    OMO.#: OMO-CSD13202Q2

    MOSFET N-CH Power MOSFET 12V 9.3mohm
    CSD13383F4T

    Mfr.#: CSD13383F4T

    OMO.#: OMO-CSD13383F4T

    MOSFET 12V N-Channel FemtoFET MOSFET
    CSD13385F5

    Mfr.#: CSD13385F5

    OMO.#: OMO-CSD13385F5

    MOSFET 12V, N ch NexFET MOSFETG , single LGA 0.8x1.5, 19mOhm 3-PICOSTAR -55 to 150
    CSD13202Q2/TI

    Mfr.#: CSD13202Q2/TI

    OMO.#: OMO-CSD13202Q2-TI-TEXAS-INSTRUMENTS

    全新原装
    CSD13381F4T

    Mfr.#: CSD13381F4T

    OMO.#: OMO-CSD13381F4T-TEXAS-INSTRUMENTS

    IGBT Transistors MOSFET 12V,N-Ch FemtoFET MOSFET
    CSD13302W

    Mfr.#: CSD13302W

    OMO.#: OMO-CSD13302W-TEXAS-INSTRUMENTS

    Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R
    CSD13381F4

    Mfr.#: CSD13381F4

    OMO.#: OMO-CSD13381F4-TEXAS-INSTRUMENTS

    MOSFET N-CH 12V 2.1A 3PICOSTAR
    CSD13383F4

    Mfr.#: CSD13383F4

    OMO.#: OMO-CSD13383F4-TEXAS-INSTRUMENTS

    MOSFET N-CH 12V 3PICOSTAR
    可用性
    库存:
    Available
    订购:
    3500
    输入数量:
    CSD13201W10的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$0.15
    US$0.15
    10
    US$0.14
    US$1.42
    100
    US$0.14
    US$13.50
    500
    US$0.13
    US$63.75
    1000
    US$0.12
    US$120.00
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