IDW30G120C5BFKSA1

IDW30G120C5BFKSA1
Mfr. #:
IDW30G120C5BFKSA1
制造商:
Infineon Technologies
描述:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
生命周期:
制造商新产品。
数据表:
IDW30G120C5BFKSA1 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
英飞凌科技
产品分类
二极管、整流器 - 单
产品
肖特基碳化硅二极管
打包
管子
部分别名
IDW30G120C5B SP001123716
单位重量
1.340411 oz
安装方式
通孔
包装盒
TO-247-3
技术
碳化硅
配置
双阳极共阴极
钯功耗
332 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
Vf-正向电压
1.4 V
Vr-反向电压
1.2 kV
Ir-反向电流
17 uA
如果正向电流
30 A
Vrrm 重复反向电压
1.2 kV
Ifsm-正向浪涌电流
240 A
Tags
IDW30G1, IDW30G, IDW30, IDW3, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IDW30G120C5B Series 1200V 87 A 5th Generation ThinQ!™SiC Schottky Diode-TO-247-3
***ark
Sic Schottky Diode, 1.2Kv, 87A, To-247; Product Range:thinq 5G 1200V Series; Diode Configuration:dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:87A; Total Capacitive Charge Qc:154Nc; Rohs Compliant: Yes
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
型号 制造商 描述 库存 价格
IDW30G120C5BFKSA1
DISTI # V99:2348_06377184
Infineon Technologies AGDiode Schottky 1.2KV 87A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
270
  • 500:$13.8900
  • 250:$14.4700
  • 100:$15.2100
  • 25:$16.8800
  • 10:$17.7100
  • 5:$18.9800
  • 1:$19.3500
IDW30G120C5BFKSA1
DISTI # IDW30G120C5BFKSA1-ND
Infineon Technologies AGDIODE GEN PURP 1200V 44A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
615In Stock
  • 240:$17.2950
  • 10:$20.2530
  • 1:$21.9600
IDW30G120C5BFKSA1
DISTI # 27089105
Infineon Technologies AGDiode Schottky 1.2KV 87A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
270
  • 250:$14.4700
  • 100:$15.2100
  • 25:$16.8800
  • 10:$17.7100
  • 5:$18.9800
  • 1:$19.3500
IDW30G120C5BFKSA1
DISTI # IDW30G120C5BFKSA1
Infineon Technologies AGDiode Schottky 1.2KV 87A 3-Pin TO-247 Tube - Rail/Tube (Alt: IDW30G120C5BFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$15.5900
  • 480:$14.9900
  • 960:$14.4900
  • 1440:$13.9900
  • 2400:$13.6900
IDW30G120C5BFKSA1
DISTI # SP001123716
Infineon Technologies AGDiode Schottky 1.2KV 87A 3-Pin TO-247 Tube (Alt: SP001123716)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€16.6900
  • 10:€15.2900
  • 25:€14.6900
  • 50:€14.0900
  • 100:€13.5900
  • 500:€13.0900
  • 1000:€12.1900
IDW30G120C5BFKSA1
DISTI # IDW30G120C5B
Infineon Technologies AGDiode Schottky 1.2KV 87A 3-Pin TO-247 Tube (Alt: IDW30G120C5B)
RoHS: Compliant
Min Qty: 240
Container: Tube
Asia - 0
  • 240:$15.4807
  • 480:$14.8445
  • 720:$14.6439
  • 1200:$14.0734
  • 2400:$13.8930
  • 6000:$13.5456
  • 12000:$13.2152
IDW30G120C5BFKSA1
DISTI # 34AC1591
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 87A, TO-247,Product Range:thinQ 5G 1200V Series,Diode Configuration:Dual Common Cathode,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:87A,Total Capacitive Charge Qc:154nC,, RoHS Compliant: Yes189
  • 1:$20.9200
  • 5:$20.7000
  • 10:$19.2900
  • 25:$18.4300
  • 50:$17.4600
  • 100:$16.4800
  • 250:$15.7200
IDW30G120C5BFKSA1
DISTI # IDW30G120C5BFKSA1
Infineon Technologies AGDiode: Schottky rectifying,SiC,THT,1.2kV,2x15A,332W,Ir:17uA12
  • 1:$35.6100
  • 3:$30.6900
  • 10:$24.6100
IDW30G120C5BFKSA1
DISTI # IDW30G120C5B
Infineon Technologies AGSiC-Schottky 1200V 30A(2x15) TO247
RoHS: Compliant
30
  • 1:€17.9000
  • 25:€14.9000
  • 100:€13.4000
  • 200:€12.9000
IDW30G120C5BFKSA1
DISTI # 2780809
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 87A, TO-247
RoHS: Compliant
252
  • 1:£16.1400
  • 5:£15.9700
  • 10:£14.2300
  • 50:£13.4800
  • 100:£12.7200
IDW30G120C5BFKSA1
DISTI # 2780809
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 87A, TO-247
RoHS: Compliant
189
  • 1:$27.6600
  • 5:$27.1400
  • 10:$25.6900
  • 50:$24.8000
  • 100:$23.9700
  • 250:$23.5800
IDW30G120C5BFKSA1
DISTI # C1S322000567319
Infineon Technologies AGRectifier Diodes
RoHS: Compliant
270
  • 240:$15.7800
  • 10:$18.0300
  • 1:$19.3200
图片 型号 描述
IDW30G120C5B

Mfr.#: IDW30G120C5B

OMO.#: OMO-IDW30G120C5B-1190

SiC-D 1200V 30A 1,4V TO247-3
IDW30G120C5B D3012B5

Mfr.#: IDW30G120C5B D3012B5

OMO.#: OMO-IDW30G120C5B-D3012B5-1190

全新原装
IDW30G120C5BFKSA1

Mfr.#: IDW30G120C5BFKSA1

OMO.#: OMO-IDW30G120C5BFKSA1-INFINEON-TECHNOLOGIES

Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
可用性
库存:
Available
订购:
5000
输入数量:
IDW30G120C5BFKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$14.68
US$14.68
10
US$13.95
US$139.51
100
US$13.22
US$1 321.65
500
US$12.48
US$6 241.15
1000
US$11.75
US$11 748.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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