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IPU80R600P7AKMA1

IPU80R600P7AKMA1
Mfr. #:
IPU80R600P7AKMA1
制造商:
Infineon Technologies
描述:
MOSFET
生命周期:
制造商新产品。
数据表:
IPU80R600P7AKMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPU80R600P7AKMA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
IPAK-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
800 V
Id - 连续漏极电流：
8 A
Rds On - 漏源电阻：
510 mOhms
Vgs th - 栅源阈值电压：
2.5 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
20 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
60 W
配置：
单身的
频道模式：
增强
商品名：
酷摩
打包：
管子
系列：
CoolMOS P7
晶体管类型：
1 N-Channel
品牌：
英飞凌科技
秋季时间：
10 ns
产品类别：
MOSFET
上升时间：
8 ns
出厂包装数量：
1500
子类别：
MOSFET
典型关断延迟时间：
40 ns
典型的开启延迟时间：
8 ns
第 # 部分别名：
IPU80R600P7 SP001644622
Tags
IPU80, IPU8, IPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 600 mOhm 20 nC CoolMOS™ Power Mosfet - IPAK
***ical
800V CoolMOS P7 Power Transistor
***i-Key
MOSFET N-CH 800V 8A TO251-3
***ronik
N-CH 800V 8,0A 600mOhm TO251-3
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 8A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.51Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 8A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.51ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 8A, TO-251; Polarità Transistor:Canale N; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.51ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
型号 制造商 描述 库存 价格
IPU80R600P7AKMA1
DISTI # 33733772		Infineon Technologies AG800V CoolMOS P7 Power Transistor1500
  • 1500:$1.0828
IPU80R600P7AKMA1
DISTI # IPU80R600P7AKMA1-ND		Infineon Technologies AGMOSFET N-CH 800V 8A TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube		1490In Stock
  • 6000:$0.6742
  • 3000:$0.7097
  • 1500:$0.7604
  • 100:$1.1660
  • 25:$1.4196
  • 10:$1.4950
  • 1:$1.6700
IPU80R600P7AKMA1
DISTI # SP001644622		Infineon Technologies AGLOW POWER_NEW (Alt: SP001644622)
RoHS: Compliant
Min Qty: 1		Europe - 1500
  • 1000:€0.6089
  • 500:€0.6199
  • 100:€0.6369
  • 50:€0.6499
  • 25:€0.7459
  • 10:€0.8929
  • 1:€1.0649
IPU80R600P7AKMA1
DISTI # IPU80R600P7AKMA1		Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPU80R600P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube		Americas - 0
  • 15000:$0.6129
  • 9000:$0.6239
  • 6000:$0.6459
  • 3000:$0.6699
  • 1500:$0.6949
IPU80R600P7AKMA1
DISTI # 24AC9064		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.51ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes171
  • 1000:$0.7320
  • 500:$0.9270
  • 100:$1.0400
  • 10:$1.3600
  • 1:$1.6000
IPU80R600P7AKMA1
DISTI # 726-IPU80R600P7AKMA1		Infineon Technologies AGMOSFET
RoHS: Compliant		105
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0300
  • 500:$0.9180
  • 1000:$0.7250
IPU80R600P7AKMA1Infineon Technologies AGSingle N-Channel 800 V 600 mOhm 20 nC CoolMOS Power Mosfet - IPAK
RoHS: Not Compliant		1500Tube
  • 1500:$0.6600
IPU80R600P7AKMA1
DISTI # 2771342		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-251176
  • 500:£0.6660
  • 250:£0.7060
  • 100:£0.7460
  • 10:£0.9790
  • 1:£1.1500
IPU80R600P7AKMA1
DISTI # 2771342		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-251
RoHS: Compliant		171
  • 6000:$1.0200
  • 3000:$1.0700
  • 1500:$1.1500
  • 100:$1.7600
  • 25:$2.1400
  • 10:$2.2600
  • 1:$2.5200
IPU80R600P7AKMA1
DISTI # XSFP00000130824		Infineon Technologies AG 
RoHS: Compliant		3000 in Stock0 on Order
  • 3000:$0.8800
  • 1500:$0.9429
IPU80R600P7AKMA1
DISTI # XSKDRABV0021277		Infineon Technologies AG 
RoHS: Compliant		4500 in Stock0 on Order
  • 4500:$0.8467
  • 1500:$0.9071
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可用性
库存:
100
订购:
2083
输入数量:
IPU80R600P7AKMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$1.58
US$1.58
10
US$1.35
US$13.50
100
US$1.03
US$103.00
500
US$0.92
US$459.00
1000
US$0.72
US$725.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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