AS4C256M16D3LB-10BIN

AS4C256M16D3LB-10BIN
Mfr. #:
AS4C256M16D3LB-10BIN
制造商:
Alliance Memory
描述:
DRAM 4G, DDR3, 256M X 16, 1.35V, 96-BALL FBGA, 1866MHZ, INDUSTRIAL TEMP
生命周期:
制造商新产品。
数据表:
AS4C256M16D3LB-10BIN 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
AS4C256M16D3LB-10BIN 更多信息
产品属性
属性值
制造商:
联盟记忆
产品分类:
动态随机存取存储器
RoHS:
Y
类型:
SDRAM - DDR3
数据总线宽度:
16 bit
组织:
256 M x 16
包装/案例:
FBGA-96
内存大小:
4 Gbit
最大时钟频率:
933 MHz
电源电压 - 最大值:
1.575 V
电源电压 - 最小值:
1.283 V
电源电流 - 最大值:
80 mA
最低工作温度:
- 40 C
最高工作温度:
+ 95 C
系列:
AS4C256M16D3LB-10
品牌:
联盟记忆
安装方式:
贴片/贴片
湿气敏感:
是的
产品类别:
动态随机存取存储器
出厂包装数量:
180
子类别:
内存和数据存储
Tags
AS4C256M16D3LB-10, AS4C256M16D3LB, AS4C256M16D3L, AS4C256M1, AS4C256M, AS4C25, AS4C2, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***v
    S***v
    RU

    Transistors gavno, take it. I ordered 10 pcs of all the fuflo, the amplifier put 15 seconds plays and is cut out, i went to buy in the store new all the norms

    2019-04-28
    A***n
    A***n
    RU

    The seller 5 + for excellent work. Handles of excellent quality. I recommend. Thank you.

    2019-08-22
DDR3 Synchronous DRAM
Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.
图片 型号 描述
AS4C256M16D3B-12BINTR

Mfr.#: AS4C256M16D3B-12BINTR

OMO.#: OMO-AS4C256M16D3B-12BINTR

DRAM 4G 1.5V 800MHz 256Mx16 DDR3 I-Temp
AS4C256M16D3LB-12BANTR

Mfr.#: AS4C256M16D3LB-12BANTR

OMO.#: OMO-AS4C256M16D3LB-12BANTR

DRAM 4G 1.35V 800MHz 256Mx16 DDR3 A-Temp
AS4C256M16D3L-12BAN

Mfr.#: AS4C256M16D3L-12BAN

OMO.#: OMO-AS4C256M16D3L-12BAN

DRAM DDR3, 4GB. 1.35V 800MHz,256M x 16
AS4C256M16D3L-12BANTR

Mfr.#: AS4C256M16D3L-12BANTR

OMO.#: OMO-AS4C256M16D3L-12BANTR

DRAM DDR3, 4GB. 1.35V 800MHz,256M x 16
AS4C256M16D3B-12BCN

Mfr.#: AS4C256M16D3B-12BCN

OMO.#: OMO-AS4C256M16D3B-12BCN-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 96FBGA
AS4C256M16D312BIN

Mfr.#: AS4C256M16D312BIN

OMO.#: OMO-AS4C256M16D312BIN-1190

全新原装
AS4C256M16D3L-12BCN

Mfr.#: AS4C256M16D3L-12BCN

OMO.#: OMO-AS4C256M16D3L-12BCN-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 96FBGA
AS4C256M16D3LB-12BINTR

Mfr.#: AS4C256M16D3LB-12BINTR

OMO.#: OMO-AS4C256M16D3LB-12BINTR-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 96FBGA
AS4C256M16D3A-12BANTR

Mfr.#: AS4C256M16D3A-12BANTR

OMO.#: OMO-AS4C256M16D3A-12BANTR-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 96FBGA Automotive, AEC-Q100
AS4C256M16D3A-12BINTR

Mfr.#: AS4C256M16D3A-12BINTR

OMO.#: OMO-AS4C256M16D3A-12BINTR-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 96FBGA
可用性
库存:
180
订购:
2163
输入数量:
AS4C256M16D3LB-10BIN的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$10.45
US$10.45
10
US$9.68
US$96.80
25
US$9.46
US$236.50
50
US$9.41
US$470.50
100
US$8.28
US$828.00
250
US$7.87
US$1 967.50
500
US$7.74
US$3 870.00
1000
US$7.53
US$7 530.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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