FJAFS1720TU

Mfr. #:: FJAFS1720TU
制造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT Sngle NPN 1700V VCEO Power Transisto
生命周期:: 制造商新产品。
数据表:: FJAFS1720TU 数据表
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产品属性
属性值

制造商: 仙童半导体

产品分类: 晶体管 - 双极 (BJT) - RF

打包: 管子

单位重量: 0.245577 oz

安装方式: 通孔

包装盒: TO-3PF

配置: 单身的

钯功耗: 60 W

最高工作温度: + 125 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 800 V

晶体管极性: NPN

集电极-发射极-饱和-电压: 0.25 V

集电极-基极-电压-VCBO: 1700 V

发射极-基极-电压-VEBO: 6 V

最大直流集电极电流: 12 A

增益带宽积fT: 15 MHz

DC-Collector-Base-Gain-hfe-Min: 8

Tags: FJAFS, FJAF, FJA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FJAFS1720TU 描述

***p One Stop Global: Trans GP BJT NPN 800V 12A 3-Pin(3+Tab) TO-3PF Tube

***ark: RAIL / NPN/1700V/10A

***rchild Semiconductor: The FJAFS1720 is a low-cost, high performance power switch designed to provide the best performance when used in an ESBC ™ configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition switches. The power switch is designed to operate up to 1700 V and up to 12amps while providing exceptionally low on-resistance and very low switching losses. The ESBC ™ switch is designed to be easy to drive using off-the-shelf power supply controllers or drivers. The ESBC ™ MOSFET is a low-voltage, low-cost, surface mount device that combines low-input capacitance and fast switching, The ESBC ™ configuration further minimizes the required driving power because it does not have Miller capacitance. The FJAFS1720 provides exceptional reliability and a large operating range due to its square reverse-bias-safeoperating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-3PF package.

Market price

型号	制造商	描述	库存	价格
FJAFS1720TU DISTI # V99:2348_06359436	ON Semiconductor	NPN/1700V/10A	360	100:$3.2240 25:$3.4300 10:$3.8050 1:$4.1730
FJAFS1720TU DISTI # FJAFS1720TU-ND	ON Semiconductor	TRANS NPN 800V 12A TO-3PF RoHS: Compliant Min Qty: 360 Container: Tube	Limited Supply - Call
FJAFS1720TU DISTI # 25845346	ON Semiconductor	NPN/1700V/10A	360	100:$3.6610 25:$3.6980 10:$3.7360 3:$4.1170
FJAFS1720TU DISTI # 512-FJAFS1720TU	ON Semiconductor	Bipolar Transistors - BJT Sngle NPN 1700V VCEO Power Transistor RoHS: Compliant	34	1:$4.5000 10:$3.8200 25:$3.7500 100:$3.3100 250:$3.1400 500:$2.8000 1000:$2.3700 2500:$2.1800
FJAFS1720TU	Fairchild Semiconductor Corporation	Power Bipolar Transistor, 12A I(C), NPN RoHS: Compliant	2235	1000:$2.5800 500:$2.7200 100:$2.8300 25:$2.9500 1:$3.1700
FJAFS1720TU DISTI # C1S541901397634	ON Semiconductor	Trans GP BJT NPN 800V 12A 60000mW 3-Pin(3+Tab) TO-3PF Rail RoHS: Compliant	360	100:$3.6600 25:$3.6980 10:$3.7360 1:$4.4280

FJAFS1720TU

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes