IPB020N04N G

IPB020N04N G
Mfr. #:
IPB020N04N G
制造商:
Infineon Technologies
描述:
Darlington Transistors MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3
生命周期:
制造商新产品。
数据表:
IPB020N04N G 数据表
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IPB020N04N G 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
系列
OptiMOS 3
打包
卷轴
部分别名
IPB020N04NGATMA1 IPB020N04NGXT SP000359157
单位重量
0.056438 oz
安装方式
贴片/贴片
商品名
优化MOS
包装盒
TO-263-7
技术
通道数
1 Channel
配置
单昆特源
晶体管型
1 N-Channel
钯功耗
167 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
7.8 ns
上升时间
6.4 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
140 A
Vds-漏-源-击穿电压
40 V
Rds-On-Drain-Source-Resistance
2 mOhms
晶体管极性
N通道
典型关断延迟时间
40 ns
典型开启延迟时间
27 ns
通道模式
增强
Tags
IPB020N04NG, IPB020N04, IPB020N0, IPB020, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型号 制造商 描述 库存 价格
IPB020N04NGATMA1
DISTI # V72:2272_06383286
Infineon Technologies AGTrans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
3890
  • 3000:$1.4473
  • 1000:$1.4625
  • 500:$1.4780
  • 250:$1.8223
  • 100:$1.8428
  • 25:$2.1990
  • 10:$2.2253
  • 1:$2.4270
IPB020N04NGATMA1
DISTI # IPB020N04NGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 40V 140A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
155In Stock
  • 500:$1.6247
  • 100:$2.0889
  • 10:$2.5990
  • 1:$2.8800
IPB020N04NGATMA1
DISTI # IPB020N04NGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 40V 140A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
155In Stock
  • 500:$1.6247
  • 100:$2.0889
  • 10:$2.5990
  • 1:$2.8800
IPB020N04NGATMA1
DISTI # IPB020N04NGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 40V 140A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$1.3069
IPB020N04NGATMA1
DISTI # 29552848
Infineon Technologies AGTrans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
3890
  • 3000:$1.4473
  • 1000:$1.4625
  • 500:$1.4780
  • 250:$1.8223
  • 100:$1.8428
  • 25:$2.1990
  • 10:$2.2253
  • 6:$2.4270
IPB020N04NGATMA1
DISTI # IPB020N04NGATMA1
Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPB020N04NGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.1799
  • 2000:$1.1379
  • 4000:$1.0959
  • 6000:$1.0599
  • 10000:$1.0409
IPB020N04NGATMA1
DISTI # SP000359157
Infineon Technologies AGMV POWER MOS (Alt: SP000359157)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 1000:€1.4849
  • 2000:€1.1539
  • 4000:€1.0709
  • 6000:€1.0379
  • 10000:€0.9969
IPB020N04N G
DISTI # 726-IPB020N04NG
Infineon Technologies AGMOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3
RoHS: Compliant
0
  • 1:$2.4200
  • 10:$2.0500
  • 100:$1.6400
  • 500:$1.4400
  • 1000:$1.1900
IPB020N04NGATMA1Infineon Technologies AGPower Field-Effect Transistor, 140A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
RoHS: Compliant
35852
  • 1000:$0.9900
  • 500:$1.0400
  • 100:$1.0800
  • 25:$1.1300
  • 1:$1.2200
IPB020N04NGATMA1
DISTI # 8977377P
Infineon Technologies AGMOSFET N-CHANNEL 40V 140A OPTIMOS TO263, RL275
  • 50:£1.4820
  • 250:£1.1840
  • 500:£1.0400
  • 1250:£0.8680
IPB020N04NGATMA1
DISTI # C1S322000652273
Infineon Technologies AGTrans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
3890
  • 250:$1.8223
  • 100:$1.8428
  • 25:$2.1990
  • 10:$2.2253
  • 1:$2.4270
图片 型号 描述
IPB020N10N5ATMA1

Mfr.#: IPB020N10N5ATMA1

OMO.#: OMO-IPB020N10N5ATMA1

MOSFET N-Ch 100V 120A D2PAK-2
IPB020N10N5LFATMA1

Mfr.#: IPB020N10N5LFATMA1

OMO.#: OMO-IPB020N10N5LFATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 100V D2PAK-3
IPB020N08N5ATMA1-CUT TAPE

Mfr.#: IPB020N08N5ATMA1-CUT TAPE

OMO.#: OMO-IPB020N08N5ATMA1-CUT-TAPE-1190

全新原装
IPB020N04NG

Mfr.#: IPB020N04NG

OMO.#: OMO-IPB020N04NG-1190

全新原装
IPB020N08N5

Mfr.#: IPB020N08N5

OMO.#: OMO-IPB020N08N5-1190

N-CH 80V 120A 2mOhm TO263-3
IPB020N10N5

Mfr.#: IPB020N10N5

OMO.#: OMO-IPB020N10N5-1190

Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) TO-263
IPB020NE7N3G

Mfr.#: IPB020NE7N3G

OMO.#: OMO-IPB020NE7N3G-1190

Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB020NE7N3G(020NE7N)

Mfr.#: IPB020NE7N3G(020NE7N)

OMO.#: OMO-IPB020NE7N3G-020NE7N--1190

全新原装
IPB020NE7N3GATMA1

Mfr.#: IPB020NE7N3GATMA1

OMO.#: OMO-IPB020NE7N3GATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 75V 120A TO263-3
IPB020N10N5ATMA1

Mfr.#: IPB020N10N5ATMA1

OMO.#: OMO-IPB020N10N5ATMA1-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2
可用性
库存:
Available
订购:
1000
输入数量:
IPB020N04N G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.78
US$1.78
10
US$1.70
US$16.96
100
US$1.61
US$160.65
500
US$1.52
US$758.65
1000
US$1.43
US$1 428.00
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