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FGH75T65SQD-F155

FGH75T65SQD-F155
Mfr. #:
FGH75T65SQD-F155
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 650V FS4 Trench IGBT
生命周期:
制造商新产品。
数据表:
FGH75T65SQD-F155 数据表
交货:
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支付:
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ECAD Model:
更多信息:
FGH75T65SQD-F155 更多信息
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.6 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
150 A
Pd - 功耗：
375 W
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
系列：
FGH75T65SQD
打包：
管子
品牌：
安森美半导体/飞兆半导体
栅极-发射极漏电流：
+/- 400 nA
产品类别：
IGBT晶体管
出厂包装数量：
450
子类别：
IGBT
第 # 部分别名：
FGH75T65SQD_F155
单位重量：
0.225401 oz
Tags
FGH75T65SQ, FGH75T65S, FGH75T, FGH7, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 150A 375000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, N-Ch, 650V, 150A, To-247-3; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Rohs Compliant: Yes
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
型号 制造商 描述 库存 价格
FGH75T65SQD_F155
DISTI # V99:2348_16116324		ON Semiconductor650V FS4 TRENCH IGBT200
  • 1000:$3.2920
  • 500:$3.9510
  • 250:$4.2760
  • 100:$4.6430
  • 10:$5.3440
  • 1:$6.9058
FGH75T65SQD_F155
DISTI # V36:1790_16116324		ON Semiconductor650V FS4 TRENCH IGBT0
  • 450000:$2.2320
  • 225000:$2.2370
  • 45000:$2.8400
  • 4500:$4.0600
  • 450:$4.2730
FGH75T65SQD-F155
DISTI # FGH75T65SQD-F155-ND		ON SemiconductorIGBT 650V 150A 375W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		291In Stock
  • 2700:$2.6621
  • 900:$3.3143
  • 450:$3.6937
  • 25:$4.4924
  • 10:$4.7520
  • 1:$5.2900
FGH75T65SQD_F155
DISTI # 31229291		ON Semiconductor650V FS4 TRENCH IGBT450
  • 450:$3.1887
FGH75T65SQD_F155
DISTI # 30303186		ON Semiconductor650V FS4 TRENCH IGBT200
  • 2:$6.9058
FGH75T65SQD_F155
DISTI # FGH75T65SQD-F155		ON SemiconductorTrans IGBT Chip N-CH 650V 150A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGH75T65SQD-F155)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$2.2900
  • 450:$2.3900
  • 900:$2.3900
  • 1800:$2.3900
  • 2700:$2.3900
FGH75T65SQD-F155
DISTI # 95Y0166		ON SemiconductorIGBT, SINGLE, N-CH, 650V, 150A, TO-247-3,DC Collector Current:150A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:375W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of RoHS Compliant: Yes314
  • 500:$5.1800
  • 250:$5.6400
  • 100:$5.8800
  • 50:$6.1200
  • 25:$6.3500
  • 10:$6.6000
  • 1:$7.5500
FGH75T65SQD-F155
DISTI # 512-FGH75T65SQD_F155		ON SemiconductorIGBT Transistors 650V FS4 Trench IGBT
RoHS: Compliant		527
  • 1:$6.3200
  • 10:$5.3700
  • 100:$4.6600
  • 250:$4.4200
  • 500:$3.9600
  • 1000:$3.3400
  • 2500:$3.1700
FGH75T65SQD-F155ON SemiconductorIGBT Field Stop Trench 650V,75A3500
  • 1:$8.7000
  • 100:$5.5600
  • 500:$4.5800
  • 1000:$4.2100
FGH75T65SQD-F155
DISTI # 2610671		ON SemiconductorIGBT, SINGLE, N-CH, 650V, 150A, TO-247-3
RoHS: Compliant		312
  • 1000:$5.3700
  • 500:$6.1200
  • 100:$6.8000
  • 10:$7.8500
  • 1:$9.0000
FGH75T65SQD-F155
DISTI # 2610671		ON SemiconductorIGBT, SINGLE, N-CH, 650V, 150A, TO-247-3242
  • 500:£2.9000
  • 250:£3.2300
  • 100:£3.4200
  • 10:£3.9300
  • 1:£5.3600
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EKYB350ELL472MMN3S

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Mfr.#: GRM1555C1H102FA01D

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 IGBT Transistors MOSFET P-Ch 60 Volt 3.0A
可用性
库存:
227
订购:
2210
输入数量:
FGH75T65SQD-F155的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$6.32
US$6.32
10
US$5.37
US$53.70
100
US$4.66
US$466.00
250
US$4.42
US$1 105.00
500
US$3.96
US$1 980.00
1000
US$3.34
US$3 340.00
2500
US$3.17
US$7 925.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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