MJD117-1G

Mfr. #:: MJD117-1G
制造商:: ON Semiconductor
描述:: Darlington Transistors 2A 100V Bipolar Power PNP
生命周期:: 制造商新产品。
数据表:: MJD117-1G 数据表
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产品属性
属性值

制造商: 在

产品分类: 集成电路芯片

系列: MJD117

打包: 管子

单位重量: 0.012346 oz

安装方式: 贴片/贴片

包装盒: DPAK-3

配置: 单身的

钯功耗: 20 W

最高工作温度: + 150 C

最低工作温度: - 65 C

集电极-发射极-电压-VCEO-Max: 100 V

晶体管极性: PNP

集电极-基极-电压-VCBO: 100 V

发射极-基极-电压-VEBO: 5 V

最大直流集电极电流: 2 A

连续集电极电流: 2 A

DC-Collector-Base-Gain-hfe-Min: 200 500 1000

最大集电极截止电流: 20 uA

Tags: MJD117, MJD11, MJD1, MJD

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJD117-1G 描述

***Semiconductor: 2.0 A, 100 V PNP Darlington Bipolar Power Transistor

***eco: Transistor Darlington Pnp 100 Volt 2 Amp 3-Pin3+ Tab Dpak-SL Rail

***ure Electronics: MJD Series 100 V 2 A Through Hole PNP Complementary Darlington Transistor

***p One Stop Global: Trans Darlington PNP 100V 2A Automotive 3-Pin(3+Tab) DPAK-3 Rail

***ical: Trans Darlington PNP 100V 2A 1750mW 3-Pin(3+Tab) DPAK-3 Tube

***et Europe: Trans Darlington PNP 100V 2A 3-Pin(3+Tab) DPAK-3 Rail

***i-Key: TRANS PNP DARL 100V 2A IPAK

***Components: ON Semiconductor, MJD117-1G

***th Star Micro: Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.

***ark: Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:25MHz; Power Dissipation Pd:20W; DC Collector Current:-2A; DC Current Gain hFE:12hFE; No. of Pins:3Pins; Operating Temperature Max:150�C RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. TRANSISTOR, PNP, -100V, -2A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:25MHz; Power Dissipation Pd:20W; DC Collector Current:-2A; DC Current Gain hFE:1000hFE; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

***nell: TRANSISTOR, PNP, -100V, -2A, TO-252; Polarità Transistor:PNP; Tensione Collettore-Emettitore V(br)ceo:-100V; Frequenza di Transizione ft:25MHz; Dissipazione di Potenza Pd:20W; Corrente di Collettore CC:-2A; Guadagno di Corrente CC hFE:1000hFE; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)

Market price

型号	制造商	描述	库存	价格
MJD117-1G DISTI # V99:2348_07296367	ON Semiconductor	Trans Darlington PNP 100V 2A Automotive 3-Pin(3+Tab) DPAK-3 Tube RoHS: Compliant	200	50000:$0.1782 25000:$0.1824 10000:$0.1905 2500:$0.1959 1000:$0.2244 100:$0.2841 10:$0.4007 1:$0.4686
MJD117-1G DISTI # MJD117-1GOS-ND	ON Semiconductor	TRANS PNP DARL 100V 2A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	2550In Stock	1050:$0.2640 525:$0.3417 150:$0.4348 75:$0.5435 1:$0.6800
MJD117-1G DISTI # 30695383	ON Semiconductor	Trans Darlington PNP 100V 2A Automotive 3-Pin(3+Tab) DPAK-3 Tube RoHS: Compliant	200	100:$0.2841 36:$0.4007
MJD117-1G DISTI # MJD117-1G	ON Semiconductor	Trans Darlington PNP 100V 2A 3-Pin(3+Tab) DPAK-3 Rail (Alt: MJD117-1G) RoHS: Compliant Min Qty: 75	Europe - 525	75:€0.2529 150:€0.2069 300:€0.1899 450:€0.1749 750:€0.1619
MJD117-1G DISTI # MJD117-1G	ON Semiconductor	Trans Darlington PNP 100V 2A 3-Pin(3+Tab) DPAK-3 Rail - Rail/Tube (Alt: MJD117-1G) RoHS: Compliant Min Qty: 2400 Container: Tube	Americas - 0	2400:$0.1759 2550:$0.1749 4950:$0.1729 12000:$0.1699 24000:$0.1659
MJD117-1G DISTI # 30AC9899	ON Semiconductor	TRANSISTOR, PNP, -100V, -2A, TO-252,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:-100V,Transition Frequency ft:25MHz,Power Dissipation Pd:20W,DC Collector Current:-2A,DC Current Gain hFE:1000hFE,Transistor Case , RoHS Compliant: Yes	2019	1:$0.6010 10:$0.4800 100:$0.3250 500:$0.2810 1000:$0.2450 2500:$0.1990 10000:$0.1920
MJD117-1G. DISTI # 15AC3555	ON Semiconductor	Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:100V,Transition Frequency ft:25MHz,Power Dissipation Pd:20W,DC Collector Current:-2A,DC Current Gain hFE:12hFE,No. of Pins:3Pins,Operating Temperature Max:150°C , RoHS Compliant: Yes	0	1:$0.1760 2550:$0.1750 4950:$0.1730 12000:$0.1700 24000:$0.1660
MJD117-1G	ON Semiconductor	MJD Series 100 V 2 A Through Hole PNP Complementary Darlington Transistor RoHS: Compliant	5250Tube	25:$0.4300 300:$0.3900 1750:$0.3300
MJD117-1G	ON Semiconductor	RoHS: Not Compliant	206183	1000:$0.3500 500:$0.3700 100:$0.3900 25:$0.4000 1:$0.4300
MJD117-1G DISTI # 863-MJD117-1G	ON Semiconductor	Darlington Transistors 2A 100V Bipolar Power PNP RoHS: Compliant	6378	1:$0.6500 10:$0.5340 100:$0.3260 1000:$0.2520 2500:$0.2150 10000:$0.2000 25000:$0.1900
MJD117-1G DISTI # 2774790	ON Semiconductor	TRANSISTOR, PNP, -100V, -2A, TO-252 RoHS: Compliant	2019	5:$0.8670 25:$0.7430 100:$0.5070 250:$0.4160 500:$0.3410 1000:$0.3150 5000:$0.2970
MJD117-1G DISTI # 2774790	ON Semiconductor	TRANSISTOR, PNP, -100V, -2A, TO-252 RoHS: Compliant	2019	5:£0.4620 25:£0.4280 100:£0.2490 250:£0.2210 500:£0.1930
MJD117-1G DISTI # C1S541900420713	ON Semiconductor	Trans Darlington PNP 100V 2A 1750mW Automotive 3-Pin(3+Tab) DPAK-3 Tube RoHS: Compliant	200	100:$0.2833 10:$0.3867
MJD117-1G DISTI # XSFP00000056470	ON SEMICONDUCTOR	Power Bipolar Transistor, 5A I(C), 100VV(BR)CEO,1-Element, NPN, Silicon, TO-251AA,Plastic/Epoxy, 3Pin RoHS: Compliant	2378	300:$0.5733 2378:$0.5375
MJD117-1G	ON Semiconductor	Complementary Darlington Power Transistors	19	1:$0.3700 100:$0.2900 500:$0.2600 1000:$0.2500

图片	型号	描述
	Mfr.#: MJD122T4 OMO.#: OMO-MJD122T4	Darlington Transistors NPN Power Darlington
	Mfr.#: MJD122TF OMO.#: OMO-MJD122TF	Darlington Transistors NPN Sil Darl Trans
	Mfr.#: MJD112-TR OMO.#: OMO-MJD112-TR-1190	全新原装
	Mfr.#: MJD117T4G/MJD112T4G OMO.#: OMO-MJD117T4G-MJD112T4G-1190	全新原装
	Mfr.#: MJD122-1G/MJD127 OMO.#: OMO-MJD122-1G-MJD127-1190	全新原装
	Mfr.#: MJD122T4G/MJD127T4G OMO.#: OMO-MJD122T4G-MJD127T4G-1190	全新原装
	Mfr.#: MJD127 OMO.#: OMO-MJD127-1190	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
	Mfr.#: MJD127T OMO.#: OMO-MJD127T-1190	全新原装
	Mfr.#: MJD127-TP OMO.#: OMO-MJD127-TP-MICRO-COMMERCIAL-COMPONENTS	Bipolar Transistors - BJT TRANS PNP 100V 8A DPAK
	Mfr.#: MJD122T4 OMO.#: OMO-MJD122T4-STMICROELECTRONICS	TRANS NPN DARL 100V 8A DPAK

MJD117-1G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes