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FDMS5352

FDMS5352
Mfr. #:
FDMS5352
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET 60V N-Channel PowerTrench
生命周期:
制造商新产品。
数据表:
FDMS5352 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FDMS5352 更多信息
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
Power-56-8
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
60 V
Id - 连续漏极电流：
13.6 A
Rds On - 漏源电阻：
6.7 mOhms
Vgs - 栅源电压：
20 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
2.5 W
配置：
单身的
频道模式：
增强
商品名：
动力战壕
打包：
卷轴
高度：
1.1 mm
长度：
6 mm
系列：
FDMS5352
晶体管类型：
1 N-Channel
宽度：
5 mm
品牌：
安森美半导体/飞兆半导体
秋季时间：
7 ns
产品类别：
MOSFET
上升时间：
11 ns
出厂包装数量：
3000
子类别：
MOSFET
典型关断延迟时间：
58 ns
典型的开启延迟时间：
19 ns
单位重量：
0.002402 oz
Tags
FDMS53, FDMS5, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET,N CH,60V,13.6A,POWER56; Transistor Polarity:N Channel; Continuous Drain C
***emi
N-Channel Power Trench® MOSFET 60V, 49A, 6.7mΩ
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET,N CH,60V,13.6A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011)
***ure Electronics
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***emi
Power Trench® MOSFET, N-Channel, 60V, 50A, 12.3mΩ
***r Electronics
Power Field-Effect Transistor, 11.5A I(D), 60V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N CH, 60V, 50A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0101ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:69W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
*** Source Electronics
MOSFET N CH 60V 13.5A 8PQFN / Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
***emi
N-Channel PowerTrench® MOSFET 60V, 22A, 8.2mΩ
***ure Electronics
FDMS86520L Series 60 V 22 A 8.2 mOhm N-Ch PowerTrench® MOSFET - Power 56
*** Stop Electro
Power Field-Effect Transistor, 13.5A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 60V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***ark
Mosfet Transistor, Dual N Channel, 15 A, 60 V, 0.047 Ohm, 10 V, 2 V
***ical
Trans MOSFET N-CH 60V 15A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
***nell
MOSFET, 2 N CH, 60V, 15A, POWERPAK SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 34W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C
***ure Electronics
N-Channel 60 V 0.07 Ohm Surface Mount STripFET™ II Power MosFet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ark
MOSFET, N CH, 60V, 16A, TO-252, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***ical
Trans MOSFET N-CH 60V 15A Automotive 3-Pin(2+Tab) DPAK T/R
***i-Key
MOSFET N-CH 60V 15A TO252
***ment14 APAC
MOSFET,N CH,W DIODE,60V,15A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:33W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
***
60V N-CHANNEL
***ow.cn
Trans MOSFET P-CH 60V 16A Automotive 8-Pin PowerPAK 1212 T/R
*** Electronics
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
***roFlash
Power Field-Effect Transistor, 16A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
*** Stop Electro
Power Field-Effect Transistors
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
型号 制造商 描述 库存 价格
FDMS5352
DISTI # V72:2272_06338066		ON SemiconductorTrans MOSFET N-CH Si 60V 13.6A 8-Pin Power 56 T/R0
    FDMS5352
    DISTI # V36:1790_06338066    		ON SemiconductorTrans MOSFET N-CH Si 60V 13.6A 8-Pin Power 56 T/R0
    • 3000000:$1.1070
    • 1500000:$1.1080
    • 300000:$1.1810
    • 30000:$1.2870
    • 3000:$1.3040
    FDMS5352
    DISTI # FDMS5352CT-ND    		ON SemiconductorMOSFET N-CH 60V 13.6A POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		6194In Stock
    • 1000:$1.4427
    • 500:$1.7412
    • 100:$2.1193
    • 10:$2.6370
    • 1:$2.9400
    FDMS5352
    DISTI # FDMS5352DKR-ND    		ON SemiconductorMOSFET N-CH 60V 13.6A POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		6194In Stock
    • 1000:$1.4427
    • 500:$1.7412
    • 100:$2.1193
    • 10:$2.6370
    • 1:$2.9400
    FDMS5352
    DISTI # FDMS5352TR-ND    		ON SemiconductorMOSFET N-CH 60V 13.6A POWER56
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		6000In Stock
    • 6000:$1.2558
    • 3000:$1.3041
    FDMS5352
    DISTI # FDMS5352    		ON SemiconductorTrans MOSFET N-CH 60V 13.6A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS5352)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 6000:$1.0900
    • 12000:$1.0900
    • 18000:$1.0900
    • 30000:$1.0900
    • 3000:$1.1900
    FDMS5352
    DISTI # FDMS5352    		ON SemiconductorTrans MOSFET N-CH 60V 13.6A 8-Pin Power 56 T/R (Alt: FDMS5352)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€1.0659
    • 18000:€1.1419
    • 12000:€1.2299
    • 6000:€1.3329
    • 3000:€1.5999
    FDMS5352
    DISTI # FDMS5352    		ON SemiconductorTrans MOSFET N-CH 60V 13.6A 8-Pin Power 56 T/R - Bulk (Alt: FDMS5352)
    RoHS: Compliant
    Min Qty: 246
    Container: Bulk    		Americas - 0
    • 1230:$1.1900
    • 2460:$1.1900
    • 246:$1.2900
    • 492:$1.2900
    • 738:$1.2900
    FDMS5352
    DISTI # 08N9285    		ON SemiconductorMOSFET Transistor, N Channel, 13.6 A, 60 V, 0.0056 ohm, 10 V, 1.8 V0
    • 30000:$1.1500
    • 18000:$1.2000
    • 12000:$1.2500
    • 6000:$1.3800
    • 3000:$1.4600
    • 1:$1.5500
    FDMS5352
    DISTI # 512-FDMS5352    		ON SemiconductorMOSFET 60V N-Channel PowerTrench
    RoHS: Compliant    		6298
    • 1:$2.7000
    • 10:$2.3000
    • 100:$1.8400
    • 500:$1.6100
    • 1000:$1.3300
    • 3000:$1.2400
    • 6000:$1.1900
    FDMS5352Fairchild Semiconductor CorporationPower Field-Effect Transistor, 13.6A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		18583
    • 1000:$1.3400
    • 500:$1.4100
    • 100:$1.4700
    • 25:$1.5300
    • 1:$1.6500
    FDMS5352
    DISTI # FDMS5352    		ON SemiconductorTransistor: N-MOSFET,unipolar,60V,49A,104W,PQFN82848
    • 500:$1.6600
    • 100:$1.7800
    • 25:$1.9700
    • 5:$2.4600
    • 1:$2.8600
    图片 型号 描述
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    HCPL-M453-500E

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    OMO.#: OMO-HCPL-M453-500E

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    2N7002K-T1-E3

    Mfr.#: 2N7002K-T1-E3

    OMO.#: OMO-2N7002K-T1-E3

    		 MOSFET 60V Vds 20V Vgs SOT-23
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    BAT54HT1G

    Mfr.#: BAT54HT1G

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    		 Schottky Diodes & Rectifiers 30V 200mW Single
    TPS7A9001DSKR

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    		 LDO Voltage Regulators ULTRA LOW NOISE 0.5A LDO WITH PG
    C1210W104KCRACTU

    Mfr.#: C1210W104KCRACTU

    OMO.#: OMO-C1210W104KCRACTU

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 0.1uF X7R 1210 10%
    RJE7318800140

    Mfr.#: RJE7318800140

    OMO.#: OMO-RJE7318800140-402

    		 Modular Connectors / Ethernet Connectors Mod Jack 1 Port 8P8C Shielded w/o Tabs
    HCPL-M453-500E

    Mfr.#: HCPL-M453-500E

    OMO.#: OMO-HCPL-M453-500E-BROADCOM

    		 High Speed Optocouplers 1MBd 3750Vdc
    2N7002K-T1-E3

    Mfr.#: 2N7002K-T1-E3

    OMO.#: OMO-2N7002K-T1-E3-VISHAY

    		 MOSFET N-CH 60V 300MA SOT-23
    可用性
    库存:
    Available
    订购:
    1989
    输入数量:
    FDMS5352的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$2.70
    US$2.70
    10
    US$2.30
    US$23.00
    100
    US$1.84
    US$184.00
    500
    US$1.61
    US$805.00
    1000
    US$1.33
    US$1 330.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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