CMPA801B025F

CMPA801B025F
Mfr. #:
CMPA801B025F
制造商:
N/A
描述:
RF Amplifier GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt
生命周期:
制造商新产品。
数据表:
CMPA801B025F 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
CMPA801B025F 更多信息
产品属性
属性值
制造商:
科沃
产品分类:
射频放大器
RoHS:
Y
安装方式:
贴片/贴片
包装/案例:
DFN-8
类型:
平坦增益 LNA
工作频率:
600 MHz to 6 GHz
P1dB - 压缩点:
19 dBm
获得:
21.6 dB
工作电源电压:
5 V
NF - 噪声系数:
0.95 dB
测试频率:
5.5 GHz
OIP3 - 三阶拦截:
35.5 dBm
工作电源电流:
56 mA
最低工作温度:
- 40 C
最高工作温度:
+ 105 C
系列:
QPL9503
打包:
卷轴
品牌:
科沃
通道数:
1 Channel
开发套件:
QPL9503EVB-01
输入回波损耗:
10 dB
产品类别:
射频放大器
出厂包装数量:
100
子类别:
无线和射频集成电路
Tags
CMPA8, CMPA, CMP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC RF AMP 8.5GHZ-11GHZ 440208
***hardson RFPD
RF & MW POWER AMPLIFIER
GaN HEMT based MMICs
Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.Learn More
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
型号 制造商 描述 库存 价格
CMPA801B025F
DISTI # CMPA801B025F-ND
WolfspeedIC RF AMP 8.5GHZ-11GHZ 440208
RoHS: Compliant
Min Qty: 1
Container: Tray
124In Stock
  • 1:$414.1000
CMPA801B025F-TB
DISTI # CMPA801B025F-TB-ND
WolfspeedIC RF AMP 8.5GHZ-11GHZ MODULE
RoHS: Compliant
Min Qty: 2
Container: Bulk
Temporarily Out of Stock
  • 2:$715.0000
CMPA801B025F
DISTI # 941-CMPA801B025F
Cree, Inc.RF Amplifier GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt
RoHS: Compliant
12
  • 1:$414.1000
CMPA801B025F-TB
DISTI # 941-CMPA801B025F-TB
Cree, Inc.RF Amplifier Test Board without GaN MMIC
RoHS: Compliant
6
  • 1:$715.0000
CMPA801B025F
DISTI # CMPA801B025F
WolfspeedRF & MW POWER AMPLIFIER
RoHS: Compliant
0
  • 1:$414.1000
图片 型号 描述
CMPA801B025F-TB

Mfr.#: CMPA801B025F-TB

OMO.#: OMO-CMPA801B025F-TB

RF Amplifier Test Board without GaN MMIC
AIML-0603-270K-T

Mfr.#: AIML-0603-270K-T

OMO.#: OMO-AIML-0603-270K-T

Fixed Inductors 27000nH, 1mA Tol.=+/-5%
AIML-0603-270K-T

Mfr.#: AIML-0603-270K-T

OMO.#: OMO-AIML-0603-270K-T-ABRACON

Fixed Inductors 27000nH, 1mA Tol.=+/-5%
CMPA801B025F-TB

Mfr.#: CMPA801B025F-TB

OMO.#: OMO-CMPA801B025F-TB-WOLFSPEED

IC RF AMP 8.5GHZ-11GHZ MODULE
可用性
库存:
Available
订购:
4000
输入数量:
CMPA801B025F的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
75
US$447.66
US$33 574.50
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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