SI7652DP-T1-GE3

SI7652DP-T1-GE3
Mfr. #:
SI7652DP-T1-GE3
制造商:
Vishay / Siliconix
描述:
RF Bipolar Transistors MOSFET 30V 15A 3.9W 15.8mohm @ 10V
生命周期:
制造商新产品。
数据表:
SI7652DP-T1-GE3 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
威世 / Siliconix
产品分类
晶体管 - FET、MOSFET - 单
打包
卷轴
部分别名
SI7652DP-GE3
单位重量
0.017870 oz
安装方式
贴片/贴片
包装盒
SO-8
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
3.9 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
14 ns
上升时间
12 ns
VGS-栅极-源极-电压
25 V
Id 连续漏极电流
15 A
Vds-漏-源-击穿电压
30 V
Rds-On-Drain-Source-Resistance
18.5 mOhms
晶体管极性
N通道
典型关断延迟时间
32 ns
典型开启延迟时间
7 ns
通道模式
增强
Tags
SI7652, SI765, SI76, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
N CHANNEL MOSFET, 30V, 15A, SOIC
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:15000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.030ohm; Rds(on) Test Voltage, Vgs:25V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:3.9W ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
SI7652DP-T1-GE3
DISTI # 781-SI7652DP-GE3
Vishay IntertechnologiesMOSFET 30V 15A 3.9W 15.8mohm @ 10V
RoHS: Compliant
0
  • 3000:$0.4480
  • 6000:$0.4260
  • 9000:$0.4100
SI7652DP-T1-GE3
DISTI # 2478974
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 15A, SOIC
RoHS: Compliant
0
  • 3000:£1.0960
SI7652DP-T1-GE3
DISTI # 2478974
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 15A, SOIC
RoHS: Compliant
0
  • 3000:$1.7600
图片 型号 描述
SI7652DP-T1-GE3

Mfr.#: SI7652DP-T1-GE3

OMO.#: OMO-SI7652DP-T1-GE3

MOSFET 30V 15A 3.9W 15.8mohm @ 10V
SI7652DP-T1-GE3

Mfr.#: SI7652DP-T1-GE3

OMO.#: OMO-SI7652DP-T1-GE3-317

RF Bipolar Transistors MOSFET 30V 15A 3.9W 15.8mohm @ 10V
SI7652DP-T1-E3

Mfr.#: SI7652DP-T1-E3

OMO.#: OMO-SI7652DP-T1-E3-317

RF Bipolar Transistors MOSFET 30V 15A 3.9W
可用性
库存:
Available
订购:
4000
输入数量:
SI7652DP-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.62
US$0.62
10
US$0.58
US$5.84
100
US$0.55
US$55.35
500
US$0.52
US$261.40
1000
US$0.49
US$492.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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