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SPD08P06PGBTMA1

SPD08P06PGBTMA1
Mfr. #:
SPD08P06PGBTMA1
制造商:
Infineon Technologies
描述:
MOSFET P-Ch -60V -8.8A DPAK-2
生命周期:
制造商新产品。
数据表:
SPD08P06PGBTMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-252-3
通道数：
1 Channel
晶体管极性：
P-通道
Vds - 漏源击穿电压：
60 V
Id - 连续漏极电流：
8.83 A
Rds On - 漏源电阻：
230 mOhms
Vgs th - 栅源阈值电压：
4 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
- 13 nC
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
Pd - 功耗：
42 W
配置：
单身的
频道模式：
增强
资质：
AEC-Q101
打包：
卷轴
高度：
2.3 mm
长度：
6.5 mm
系列：
XPD08P06
晶体管类型：
1 P-Channel
宽度：
6.22 mm
品牌：
英飞凌科技
正向跨导 - 最小值：
2.5 S
秋季时间：
14 ns
产品类别：
MOSFET
上升时间：
46 ns
出厂包装数量：
2500
子类别：
MOSFET
典型关断延迟时间：
48 ns
典型的开启延迟时间：
16 ns
第 # 部分别名：
G SP000450534 SPD08P06P SPD8P6PGXT
单位重量：
0.139332 oz
Tags
SPD08P06PG, SPD08P06P, SPD08P06, SPD08P0, SPD08P, SPD08, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, P-CH, 60V, 8.83A, DPAK; Transistor Polarity:P Channel; Continuous Drain
***ure Electronics
Single P-Channel 60 V 300 mOhm 10 nC SIPMOS® Power Mosfet - TO-252-3
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, P-CH, 60V, 8.83A, DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.83A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:-6.2V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:42W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***ure Electronics
Single N-Channel 100V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-252AA
***essParts.Net
INTERNATIONAL RECTIFIER IRFR120NTRPBF / MOSFET N-CH 100V 9.4A DPAK ESD IR
***(Formerly Allied Electronics)
MOSFET, 100V, 9.1A, 210 mOhm, 16.7 nC Qg, D-Pak
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
MOSFET, N-CH, 100V, 9.4A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Source Voltage Vds:100V; On Resistance
***roFlash
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N-CH, 100V, 9.4A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.21ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 48W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***r Electronics
Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***emi
Power MOSFET, 100V, 225mΩ, 9A, Single N-Channel
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9A; On Resistance Rds(On):0.18Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V; Product Range:-Rohs Compliant: Yes
***nell
MOSFET, N-CH, 100V, 9A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.6V; Power Dissipation Pd: 19W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***p One Stop Global
Trans MOSFET P-CH 100V 9A Automotive 3-Pin(2+Tab) TO-252 T/R
***ure Electronics
Single P-Channel 100 V 300 mOhm 8.4 nC 42 W Silicon SMT Mosfet - TO-252-3
***ment14 APAC
MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity:P Channel; Continuous Drain Current Id:-9A; Source Voltage Vds:-100V; On Resistance
***nell
MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity: P Channel; Continuous Drain Current Id: -9A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 42W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***i-Key
MOSFET N-CH 200V 11A DPAK
***ser
MOSFETs 200V NCh PowerMOSFET UltraFET
***el Nordic
Contact for details
型号 制造商 描述 库存 价格
SPD08P06PGBTMA1
DISTI # V72:2272_06384823		Infineon Technologies AGTrans MOSFET P-CH 60V 8.83A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		5
  • 75000:$0.2740
  • 30000:$0.3044
  • 15000:$0.3153
  • 6000:$0.3239
  • 3000:$0.3292
  • 1000:$0.3647
  • 500:$0.3814
  • 250:$0.4238
  • 100:$0.4709
  • 50:$0.7327
  • 25:$0.7423
  • 10:$0.8215
  • 1:$0.9431
SPD08P06PGBTMA1
DISTI # SPD08P06PGBTMA1CT-ND		Infineon Technologies AGMOSFET P-CH 60V 8.83A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4630In Stock
  • 1000:$0.3955
  • 500:$0.5010
  • 100:$0.6064
  • 10:$0.7780
  • 1:$0.8700
SPD08P06PGBTMA1
DISTI # SPD08P06PGBTMA1DKR-ND		Infineon Technologies AGMOSFET P-CH 60V 8.83A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4630In Stock
  • 1000:$0.3955
  • 500:$0.5010
  • 100:$0.6064
  • 10:$0.7780
  • 1:$0.8700
SPD08P06PGBTMA1
DISTI # SPD08P06PGBTMA1TR-ND		Infineon Technologies AGMOSFET P-CH 60V 8.83A 3TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 25000:$0.3242
  • 12500:$0.3328
  • 5000:$0.3456
  • 2500:$0.3712
SPD08P06PGBTMA1
DISTI # 33152147		Infineon Technologies AGTrans MOSFET P-CH 60V 8.83A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 2500:$0.4188
SPD08P06PGBTMA1
DISTI # SPD08P06PGBTMA1		Infineon Technologies AGTrans MOSFET P-CH 60V 8.83A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: SPD08P06PGBTMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2399
  • 15000:$0.2459
  • 10000:$0.2529
  • 5000:$0.2599
  • 2500:$0.2669
SPD08P06PGBTMA1
DISTI # SP000450534		Infineon Technologies AGTrans MOSFET P-CH 60V 8.83A 3-Pin(2+Tab) TO-252 (Alt: SP000450534)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 25000:€0.2869
  • 15000:€0.3089
  • 10000:€0.3429
  • 5000:€0.3859
  • 2500:€0.4549
SPD08P06PGBTMA1
DISTI # 47W3758		Infineon Technologies AGMOSFET, P CHANNEL, 60V, 8.83A, DPAK,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.83A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.23ohm,Rds(on) Test Voltage Vgs:-6.2V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes0
  • 1000:$0.3950
  • 500:$0.4440
  • 100:$0.4930
  • 10:$0.7640
  • 1:$0.9190
SPD08P06PGBTMA1
DISTI # 726-SPD08P06PGBTMA1		Infineon Technologies AGMOSFET P-Ch -60V -8.8A DPAK-2
RoHS: Compliant		4365
  • 1:$0.9100
  • 10:$0.7560
  • 100:$0.4880
  • 1000:$0.3910
  • 2500:$0.3300
  • 10000:$0.3170
  • 25000:$0.3050
SPD08P06P G
DISTI # 726-SPD08P06PG		Infineon Technologies AGMOSFET P-Ch -60V -8.8A DPAK-2
RoHS: Compliant		5585
  • 1:$0.9100
  • 10:$0.7560
  • 100:$0.4880
  • 1000:$0.3910
  • 2500:$0.3300
  • 10000:$0.3170
  • 25000:$0.3050
SPD08P06PGXT
DISTI # 726-SPD08P06PGXT		Infineon Technologies AGMOSFET P-Ch -60V -8.8A DPAK-22466
  • 1:$0.9100
  • 10:$0.7560
  • 100:$0.4880
  • 1000:$0.3910
  • 2500:$0.3300
  • 10000:$0.3170
  • 25000:$0.3050
SPD08P06PGBTMA1Infineon Technologies AGSingle P-Channel 60 V 300 mOhm 10 nC SIPMOS Power Mosfet - TO-252-3
RoHS: Not Compliant		5000Reel
  • 2500:$0.2550
SPD08P06PGBTMA1
DISTI # 4623247		Infineon Technologies AGMOSFET P-CHANNEL 60V 8.83A TO252, PK530
  • 1250:£0.2760
  • 630:£0.3380
  • 130:£0.3990
  • 30:£0.4600
  • 10:£0.5230
SPD08P06PGBTMA1
DISTI # 4623247P		Infineon Technologies AGMOSFET P-CHANNEL 60V 8.83A TO252, RL2145
  • 1250:£0.2760
  • 630:£0.3380
  • 130:£0.3990
  • 30:£0.4600
SPD08P06PGBTMA1
DISTI # SPD08P06PGBTMA1		Infineon Technologies AGTransistor: P-MOSFET,unipolar,-60V,-8.8A,42W,PG-TO252-32480
  • 100:$0.3600
  • 25:$0.4200
  • 5:$0.4700
  • 1:$0.5700
SPD08P06PGBTMA1
DISTI # 2212864		Infineon Technologies AGMOSFET, P-CH, 60V, 8.83A, DPAK0
  • 500:£0.2980
  • 250:£0.3380
  • 100:£0.3790
  • 10:£0.6430
  • 1:£0.8100
SPD08P06PGBTMA1
DISTI # 2212864		Infineon Technologies AGMOSFET, P-CH, 60V, 8.83A, DPAK
RoHS: Compliant		19
  • 1000:$0.5960
  • 500:$0.7550
  • 100:$0.9140
  • 10:$1.1800
  • 1:$1.3100
SPD08P06PGBTMA1
DISTI # XSFP00000140091		Infineon Technologies AG 
RoHS: Compliant		5000 in Stock0 on Order
  • 5000:$0.3400
  • 2500:$0.3643
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可用性
库存:
Available
订购:
1987
输入数量:
SPD08P06PGBTMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.91
US$0.91
10
US$0.76
US$7.56
100
US$0.49
US$48.80
1000
US$0.39
US$391.00
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