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IPB120N04S4-01

IPB120N04S4-01
Mfr. #:
IPB120N04S4-01
制造商:
Infineon Technologies
描述:
RF Bipolar Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
生命周期:
制造商新产品。
数据表:
IPB120N04S4-01 数据表
交货:
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更多信息:
IPB120N04S4-01 更多信息
产品属性
属性值
制造商
英飞凌
产品分类
FET - 单
系列
OptiMOS-T2
打包
卷轴
部分别名
IPB120N04S401ATMA1 IPB120N04S401XT SP000705700
单位重量
0.139332 oz
安装方式
贴片/贴片
商品名
优化MOS
包装盒
TO-252-3
技术
硅
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
300 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
120 A
Vds-漏-源-击穿电压
40 V
Rds-On-Drain-Source-Resistance
2 mOhms
晶体管极性
N通道
通道模式
增强
Tags
IPB120N04S4-0, IPB120N04S4, IPB120N04, IPB120N0, IPB120N, IPB120, IPB12, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Automotive COOLiRFET™ Power MOSFETs
Infineon Automotive COOLiRFET™ Power MOSFETs are specifically designed for Automotive applications. These HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These new devices offer low conduction losses and robust avalanche performance to deliver higher efficiency, power density and reliability. With this performance, many applications using these new COOLiRFET™ devices run significantly cooler than with state-of-the-art MOSFETs. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and wide variety of other applications.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型号 制造商 描述 库存 价格
IPB120N04S401ATMA1
DISTI # V72:2272_06383031		Infineon Technologies AGTrans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1106
  • 100:$1.8005
  • 25:$2.1404
  • 10:$2.1652
  • 1:$2.3561
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1054In Stock
  • 500:$1.6195
  • 100:$2.0822
  • 10:$2.5910
  • 1:$2.8700
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1054In Stock
  • 500:$1.6195
  • 100:$2.0822
  • 10:$2.5910
  • 1:$2.8700
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3-2
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$1.3028
IPB120N04S401ATMA1
DISTI # 26195102		Infineon Technologies AGTrans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1106
  • 100:$1.8005
  • 25:$2.1404
  • 10:$2.1652
  • 7:$2.3561
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N04S401ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.1759
  • 2000:$1.1339
  • 4000:$1.0929
  • 6000:$1.0559
  • 10000:$1.0369
IPB120N04S401ATMA1
DISTI # SP000705700		Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R (Alt: SP000705700)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.3249
  • 2000:€1.1039
  • 4000:€1.0189
  • 6000:€0.9469
  • 10000:€0.8829
IPB120N04S401ATMA1
DISTI # 34AC1654		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power , RoHS Compliant: Yes263
  • 1:$3.0000
  • 10:$2.7100
  • 25:$2.5300
  • 50:$2.3500
  • 100:$2.1800
  • 250:$1.9300
  • 500:$1.6900
IPB120N04S401ATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		46451
  • 1000:$1.1000
  • 500:$1.1600
  • 100:$1.2100
  • 25:$1.2600
  • 1:$1.3600
IPB120N04S4-01
DISTI # 726-IPB120N04S4-01		Infineon Technologies AGMOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
RoHS: Compliant		2372
  • 1:$2.4100
  • 10:$2.0500
  • 100:$1.6400
  • 500:$1.4300
  • 1000:$1.1900
IPB120N04S401ATMA1
DISTI # 2781067		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-263
RoHS: Compliant		263
  • 1:$2.4100
  • 10:$2.2500
  • 100:$1.9900
  • 250:$1.8800
  • 500:$1.7800
  • 1000:$1.7000
IPB120N04S401ATMA1
DISTI # 2781067		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-263
RoHS: Compliant		331
  • 1:£2.4700
  • 10:£1.9800
  • 100:£1.6000
  • 250:£1.4200
  • 500:£1.2400
IPB120N04S401ATMA1
DISTI # C1S322000652291		Infineon Technologies AGMOSFETs
RoHS: Compliant		106
  • 100:$1.8005
  • 25:$2.1404
  • 10:$2.1652
图片 型号 描述
IPB120N04S404ATMA1

Mfr.#: IPB120N04S404ATMA1

OMO.#: OMO-IPB120N04S404ATMA1

 MOSFET N-CHANNEL_30/40V
IPB120N04S401ATMA1

Mfr.#: IPB120N04S401ATMA1

OMO.#: OMO-IPB120N04S401ATMA1

 MOSFET N-CHANNEL_30/40V
IPB120N06NGINTR-ND

Mfr.#: IPB120N06NGINTR-ND

OMO.#: OMO-IPB120N06NGINTR-ND-1190

 全新原装
IPB120N06S402ATMA1

Mfr.#: IPB120N06S402ATMA1

OMO.#: OMO-IPB120N06S402ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
IPB120N06S403ATMA1

Mfr.#: IPB120N06S403ATMA1

OMO.#: OMO-IPB120N06S403ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
IPB120N06S4H1ATMA1

Mfr.#: IPB120N06S4H1ATMA1

OMO.#: OMO-IPB120N06S4H1ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
IPB120N10S4-03

Mfr.#: IPB120N10S4-03

OMO.#: OMO-IPB120N10S4-03-1190

 - Bulk (Alt: IPB120N10S4-03)
IPB120N08S404ATMA1

Mfr.#: IPB120N08S404ATMA1

OMO.#: OMO-IPB120N08S404ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CHANNEL 75/80V
IPB120N06S4H1ATMA2

Mfr.#: IPB120N06S4H1ATMA2

OMO.#: OMO-IPB120N06S4H1ATMA2-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2
IPB120N04S4-02

Mfr.#: IPB120N04S4-02

OMO.#: OMO-IPB120N04S4-02-317

 RF Bipolar Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
可用性
库存:
Available
订购:
5500
输入数量:
IPB120N04S4-01的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$1.60
US$1.60
10
US$1.52
US$15.25
100
US$1.44
US$144.45
500
US$1.36
US$682.15
1000
US$1.28
US$1 284.00
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