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IPB017N06N3 G

IPB017N06N3 G
Mfr. #:
IPB017N06N3 G
制造商:
Infineon Technologies
描述:
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263 T/R
生命周期:
制造商新产品。
数据表:
IPB017N06N3 G 数据表
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产品属性
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Tags
IPB017N06N3, IPB017N06, IPB017N0, IPB017, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型号 制造商 描述 库存 价格
IPB017N06N3GATMA1
DISTI # V72:2272_06376932		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		952
  • 500:$2.8570
  • 250:$3.3860
  • 100:$3.4210
  • 25:$4.2100
  • 10:$4.2520
  • 1:$5.2503
IPB017N06N3GATMA1
DISTI # V36:1790_06376932		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000:$2.3900
IPB017N06N3GATMA1
DISTI # IPB017N06N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1702In Stock
  • 500:$3.0148
  • 100:$3.5415
  • 10:$4.3220
  • 1:$4.8100
IPB017N06N3GATMA1
DISTI # IPB017N06N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1702In Stock
  • 500:$3.0148
  • 100:$3.5415
  • 10:$4.3220
  • 1:$4.8100
IPB017N06N3GATMA1
DISTI # IPB017N06N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 2000:$2.3451
  • 1000:$2.4686
IPB017N06N3GATMA1
DISTI # 33150103		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		3000
  • 1000:$2.0612
IPB017N06N3 G
DISTI # 31398029		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263 T/R
RoHS: Compliant		1000
  • 5:$5.1375
IPB017N06N3GATMA1
DISTI # 32445162		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		952
  • 3:$5.2503
IPB017N06N3GATMA1
DISTI # IPB017N06N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB017N06N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 1000
  • 6000:$2.0900
  • 10000:$2.0900
  • 4000:$2.1900
  • 2000:$2.2900
  • 1000:$2.3900
IPB017N06N3 G
DISTI # IPB017N06N3 G		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R (Alt: IPB017N06N3 G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 0
  • 50000:$2.1257
  • 25000:$2.1530
  • 10000:$2.1809
  • 5000:$2.2096
  • 3000:$2.2693
  • 2000:$2.3324
  • 1000:$2.3990
IPB017N06N3 G
DISTI # SP000434404		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R (Alt: SP000434404)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€1.7900
  • 6000:€1.8900
  • 2000:€2.0900
  • 4000:€2.0900
  • 1000:€2.1900
IPB017N06N3GATMA1
DISTI # 60R2643		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 180A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    IPB017N06N3 G
    DISTI # 726-IPB017N06N3G    		Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant    		1133
    • 1:$4.4400
    • 10:$3.7700
    • 100:$3.2700
    • 250:$3.1000
    • 500:$2.7800
    • 1000:$2.3500
    • 2000:$2.2300
    IPB017N06N3GATMA1
    DISTI # 726-IPB017N06N3GATMA    		Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$4.4400
    • 10:$3.7700
    • 100:$3.2700
    • 250:$3.1000
    • 500:$2.7800
    • 1000:$2.3500
    • 2000:$2.2300
    IPB017N06N3GXT
    DISTI # 726-IPB017N06N3GXT    		Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant    		0
    • 1000:$2.3500
    • 2000:$2.2300
    IPB017N06N3GInfineon Technologies AG 20
    • 2:$3.5840
    • 8:$2.3296
    IPB017N06N3GInfineon Technologies AG180 A, 60 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-26315
    • 8:$2.6100
    • 3:$3.4800
    • 1:$5.2200
    IPB017N06N3GInfineon Technologies AG180 A, 60 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-26316
    • 9:$2.4000
    • 3:$3.2000
    • 1:$4.8000
    IPB017N06N3GATMA1
    DISTI # 7545412    		Infineon Technologies AGMOSFET N-CH 60V 180A OPTIMOS3 TO263-7, EA19
    • 500:£2.2500
    • 250:£2.5100
    • 50:£2.7800
    • 10:£3.0500
    • 1:£3.1400
    IPB017N06N3GATMA1
    DISTI # 7545412P    		Infineon Technologies AGMOSFET N-CH 60V 180A OPTIMOS3 TO263-7, RL970
    • 500:£2.2500
    • 250:£2.5100
    • 50:£2.7800
    • 10:£3.0500
    IPB017N06N3GATMA1
    DISTI # 1775519    		Infineon Technologies AGMOSFET, N CH, 180A, 60V, PG-TO263-7
    RoHS: Compliant    		0
    • 2000:$3.3600
    • 1000:$3.5400
    • 500:$4.1900
    • 250:$4.6700
    • 100:$4.9300
    • 10:$5.6800
    • 1:$6.6900
    图片 型号 描述
    IPB017N10N5LFATMA1

    Mfr.#: IPB017N10N5LFATMA1

    OMO.#: OMO-IPB017N10N5LFATMA1

    		 MOSFET DIFFERENTIATED MOSFETS
    IPB017N08N5

    Mfr.#: IPB017N08N5

    OMO.#: OMO-IPB017N08N5

    		 MOSFET N-Ch 80V 120A D2PAK-2
    IPB017N06N3 G

    Mfr.#: IPB017N06N3 G

    OMO.#: OMO-IPB017N06N3-G

    		 MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
    IPB017N06N3GXT

    Mfr.#: IPB017N06N3GXT

    OMO.#: OMO-IPB017N06N3GXT

    		 MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
    IPB017N08N5

    Mfr.#: IPB017N08N5

    OMO.#: OMO-IPB017N08N5-1190

    		 MOSFET N-Ch 80V 120A D2PAK-2
    IPB017N06N 017N06N -7

    Mfr.#: IPB017N06N 017N06N -7

    OMO.#: OMO-IPB017N06N-017N06N--7-1190

    		 全新原装
    IPB017N06N3G

    Mfr.#: IPB017N06N3G

    OMO.#: OMO-IPB017N06N3G-1190

    		 MOSFET N-CH 60V 180A OPTIMOS3 TO263-7, EA
    IPB017N06N3GATMA1

    Mfr.#: IPB017N06N3GATMA1

    OMO.#: OMO-IPB017N06N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 180A TO263-7
    IPB017N10N5LFATMA1

    Mfr.#: IPB017N10N5LFATMA1

    OMO.#: OMO-IPB017N10N5LFATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V D2PAK-7
    IPB017N10N5ATMA1

    Mfr.#: IPB017N10N5ATMA1

    OMO.#: OMO-IPB017N10N5ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-2
    可用性
    库存:
    Available
    订购:
    4500
    输入数量:
    IPB017N06N3 G的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$0.00
    US$0.00
    10
    US$0.00
    US$0.00
    100
    US$0.00
    US$0.00
    500
    US$0.00
    US$0.00
    1000
    US$0.00
    US$0.00
    从...开始
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