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IPD180N10N

IPD180N10N
Mfr. #:
IPD180N10N
制造商:
Infineon Technologies
描述:
生命周期:
制造商新产品。
数据表:
IPD180N10N 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商
英飞凌科技
产品分类
FET - 单
系列
优化MOS
打包
Digi-ReelR 替代包装
部分别名
IPD180N10N3GBTMA1 IPD180N10N3GXT SP000482438
单位重量
0.139332 oz
安装方式
贴片/贴片
包装盒
TO-252-3, DPak (2 Leads + Tab), SC-63
技术
硅
工作温度
-55°C ~ 175°C (TJ)
安装型
表面贴装
通道数
1 Channel
供应商-设备-包
PG-TO252-3
配置
单身的
FET型
MOSFET N 沟道，金属氧化物
最大功率
71W
晶体管型
1 N-Channel
漏源电压 Vdss
100V
输入电容-Ciss-Vds
1800pF @ 50V
FET-Feature
标准
Current-Continuous-Drain-Id-25°C
43A (Tc)
Rds-On-Max-Id-Vgs
18 mOhm @ 33A, 10V
Vgs-th-Max-Id
3.5V @ 33μA
栅极电荷-Qg-Vgs
25nC @ 10V
钯功耗
71 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
5 ns
上升时间
12 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
43 A
Vds-漏-源-击穿电压
100 V
Rds-On-Drain-Source-Resistance
18 mOhms
晶体管极性
N通道
典型关断延迟时间
19 ns
典型开启延迟时间
12 ns
通道模式
增强
Tags
IPD18, IPD1, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
IPD180N10N3GATMA1
DISTI # V72:2272_09156944		Infineon Technologies AGMV POWER MOS1850
  • 1000:$0.4258
  • 500:$0.5137
  • 250:$0.5657
  • 100:$0.5675
  • 25:$0.6906
  • 10:$0.6937
  • 1:$0.7809
IPD180N10N3GATMA1
DISTI # IPD180N10N3GATMA1TR-ND		Infineon Technologies AGMV POWER MOS
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.4813
IPD180N10N3GBTMA1
DISTI # IPD180N10N3GBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD180N10N3GBTMA1
    DISTI # IPD180N10N3GBTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD180N10N3GBTMA1
      DISTI # IPD180N10N3GBTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1CT-ND        		Infineon Technologies AGMV POWER MOS
        RoHS: Compliant
        Min Qty: 1
        Container: Cut Tape (CT)        		Temporarily Out of Stock
        • 1000:$0.5311
        • 500:$0.6727
        • 100:$0.8675
        • 10:$1.0980
        • 1:$1.2400
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1DKR-ND        		Infineon Technologies AGMV POWER MOS
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Temporarily Out of Stock
        • 1000:$0.5311
        • 500:$0.6727
        • 100:$0.8675
        • 10:$1.0980
        • 1:$1.2400
        IPD180N10N3GATMA1
        DISTI # 26196098        		Infineon Technologies AGMV POWER MOS1850
        • 21:$0.7816
        IPD180N10N3 G
        DISTI # IPD180N10N3 G        		Infineon Technologies AGTrans MOSFET N-CH 100V 43A 3-Pin TO-252 T/R (Alt: IPD180N10N3 G)
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape and Reel        		Asia - 12500
        • 2500:$0.4992
        • 5000:$0.4787
        • 7500:$0.4722
        • 12500:$0.4538
        • 25000:$0.4480
        • 62500:$0.4368
        • 125000:$0.4261
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1        		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPD180N10N3GATMA1)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 0
        • 2500:$0.3599
        • 5000:$0.3469
        • 10000:$0.3339
        • 15000:$0.3229
        • 25000:$0.3169
        IPD180N10N3GBTMA1
        DISTI # IPD180N10N3GBTMA1        		Infineon Technologies AGTrans MOSFET N-CH 100V 43A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD180N10N3GBTMA1)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 0
        • 2500:$0.3599
        • 5000:$0.3469
        • 10000:$0.3339
        • 15000:$0.3229
        • 25000:$0.3169
        IPD180N10N3GATMA1
        DISTI # 47Y8049        		Infineon Technologies AGMOSFET Transistor, N Channel, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V , RoHS Compliant: Yes0
          IPD180N10N3GATMA1
          DISTI # 726-IPD180N10N3GATMA          		Infineon Technologies AGMOSFET MV POWER MOS
          RoHS: Compliant          		251
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          IPD180N10N3GBTMA1
          DISTI # 726-IPD180N10N3GBTMA          		Infineon Technologies AGMOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
          RoHS: Compliant          		0
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          • 10000:$0.4010
          IPD180N10N3 G
          DISTI # 726-IPD180N10N3G          		Infineon Technologies AGMOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
          RoHS: Compliant          		0
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          • 10000:$0.4010
          IPD180N10N3GInfineon Technologies AGPower Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant          		116
          • 1000:$0.4600
          • 500:$0.4800
          • 100:$0.5000
          • 25:$0.5200
          • 1:$0.5600
          IPD180N10N3GBTMA1Infineon Technologies AGPower Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant          		166
          • 1000:$0.4400
          • 500:$0.4600
          • 100:$0.4800
          • 25:$0.5000
          • 1:$0.5400
          IPD180N10N3GInfineon Technologies AGINSTOCK622
            IPD180N10N3GATMA1
            DISTI # 2443433            		Infineon Technologies AGMOSFET, N CH, 100V, 43A, TO-252-3
            RoHS: Compliant            		0
            • 1:$1.6300
            • 10:$1.3900
            • 100:$1.0700
            • 500:$0.9400
            • 1000:$0.7430
            • 2500:$0.6670
            IPD180N10N3GBTMA1
            DISTI # 2617464            		Infineon Technologies AGMOSFET, N-CH, 100V, 43A, TO-252-3
            RoHS: Compliant            		0
            • 1:$1.4900
            • 10:$1.2300
            • 100:$0.9930
            • 250:$0.8880
            • 500:$0.7870
            • 1000:$0.7320
            图片 型号 描述
            IPD180N10N3GATMA1

            Mfr.#: IPD180N10N3GATMA1

            OMO.#: OMO-IPD180N10N3GATMA1

            		 MOSFET MV POWER MOS
            IPD180N10N3GBTMA1

            Mfr.#: IPD180N10N3GBTMA1

            OMO.#: OMO-IPD180N10N3GBTMA1

            		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3 G

            Mfr.#: IPD180N10N3 G

            OMO.#: OMO-IPD180N10N3-G

            		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3GBTMA1

            Mfr.#: IPD180N10N3GBTMA1

            OMO.#: OMO-IPD180N10N3GBTMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 100V 43A TO252-3
            IPD180N10N3GATMA1

            Mfr.#: IPD180N10N3GATMA1

            OMO.#: OMO-IPD180N10N3GATMA1-INFINEON-TECHNOLOGIES

            		 MV POWER MOS
            IPD180N10N3GATMA1-CUT TAPE

            Mfr.#: IPD180N10N3GATMA1-CUT TAPE

            OMO.#: OMO-IPD180N10N3GATMA1-CUT-TAPE-1190

            		 全新原装
            IPD180N10N

            Mfr.#: IPD180N10N

            OMO.#: OMO-IPD180N10N-1190

            		 全新原装
            IPD180N10N3 G

            Mfr.#: IPD180N10N3 G

            OMO.#: OMO-IPD180N10N3-G-1190

            		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3GATMA1 , 2SD2

            Mfr.#: IPD180N10N3GATMA1 , 2SD2

            OMO.#: OMO-IPD180N10N3GATMA1-2SD2-1190

            		 全新原装
            IPD180N10N3G

            Mfr.#: IPD180N10N3G

            OMO.#: OMO-IPD180N10N3G-124

            		 Darlington Transistors MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            可用性
            库存:
            Available
            订购:
            4500
            输入数量:
            IPD180N10N的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
            参考价格（美元）
            数量
            单价
            小计金额
            1
            US$0.00
            US$0.00
            10
            US$0.00
            US$0.00
            100
            US$0.00
            US$0.00
            500
            US$0.00
            US$0.00
            1000
            US$0.00
            US$0.00
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