SI7456CDP-T1-GE3

Name: Vishay - SI7456CDP-T1-GE3
Brand: Vishay
SKU: OMO-2919513
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI7456CDP-T1-GE3
制造商:: Vishay
描述:: RF Bipolar Transistors MOSFET 100V 27.5A 35.7W
生命周期:: 制造商新产品。
数据表:: SI7456CDP-T1-GE3 数据表
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ECAD Model:

产品属性
属性值

制造商: 威世

产品分类: FET - 单

打包: 卷轴

单位重量: 0.017870 oz

安装方式: 贴片/贴片

商品名: 沟槽场效应晶体管

包装盒: SO-8

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 35.7 W

最高工作温度: + 150 C

最低工作温度: - 55 C

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 27.5 A

Vds-漏-源-击穿电压: 100 V

Rds-On-Drain-Source-Resistance: 31.5 mOhms

晶体管极性: N通道

Tags: SI7456, SI745, SI74, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7456CDP-T1-GE3 描述

***ical: Trans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET N-CH 100V 27.5A PPAK SO-8

***: 100V, 25 MOHMS@10V

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0195Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:5W; No. Of Pins:8Pins Rohs Compliant: Yes

***nell: MOSFET,N CH,DIODE,100V,27.5A,SO8PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:19500µohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC PowerPAK; No. of Pins:8; Current Id Max:10.3A; Power Dissipation:5W

***ment14 APAC: MOSFET,N CH,DIODE,100V,27.5A,SO8PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):19500µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.3A; Power Dissipation Pd:5W; Voltage Vgs Max:20V

Market price

型号	制造商	描述	库存	价格
SI7456CDP-T1-GE3 DISTI # SI7456CDP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 27.5A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.8019
SI7456CDP-T1-GE3 DISTI # SI7456CDP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 27.5A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.8871 500:$1.0707 100:$1.3766 10:$1.7130 1:$1.9000
SI7456CDP-T1-GE3 DISTI # SI7456CDP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 27.5A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.8871 500:$1.0707 100:$1.3766 10:$1.7130 1:$1.9000
SI7456CDP-T1-GE3 DISTI # SI7456CDP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7456CDP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7859 6000:$0.7619 12000:$0.7309 18000:$0.7109 30000:$0.6919
SI7456CDP-T1-GE3 DISTI # 86R3925	Vishay Intertechnologies	MOSFET Transistor, N Channel, 27.5 A, 100 V, 19500 ohm, 10 V, 1.2 V	0	1:$0.7890 3000:$0.7830 6000:$0.7460
SI7456CDP-T1-GE3. DISTI # 30AC0199	Vishay Intertechnologies	N-CHANNEL 100-V (D-S) MOSFET , ROHS COMPLIANT: YES	0	1:$0.7890 3000:$0.7830 6000:$0.7460
SI7456CDP-T1-GE3 DISTI # 78-SI7456CDP-T1-GE3	Vishay Intertechnologies	MOSFET 100V 27.5A 35.7W RoHS: Compliant	0	1:$1.6800 10:$1.4000 100:$1.0800 500:$0.9460 1000:$0.9010 3000:$0.9000
SI7456CDP-T1-GE3	Vishay Intertechnologies	MOSFET 100V 27.5A 35.7W	Americas -

SI7456CDP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes