IDW16G65C5XKSA1

IDW16G65C5XKSA1
Mfr. #:
IDW16G65C5XKSA1
制造商:
Infineon Technologies
描述:
Schottky Diodes & Rectifiers SIC DIODES
生命周期:
制造商新产品。
数据表:
IDW16G65C5XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IDW16G65C5XKSA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
肖特基二极管和整流器
RoHS:
Y
产品:
肖特基碳化硅二极管
安装方式:
通孔
包装/案例:
TO-247-3
如果 - 正向电流:
16 A
Vrrm - 重复反向电压:
650 V
Vf - 正向电压:
1.5 V
Ifsm - 正向浪涌电流:
95 A
配置:
单身的
技术:
碳化硅
Ir - 反向电流:
0.8 uA
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
系列:
冷却碳化硅
打包:
管子
品牌:
英飞凌科技
Pd - 功耗:
94 W
产品类别:
肖特基二极管和整流器
出厂包装数量:
240
子类别:
二极管和整流器
商品名:
冷却碳化硅
Vr - 反向电压:
650 V
第 # 部分别名:
IDW16G65C5 SP001632898
单位重量:
0.211644 oz
Tags
IDW16, IDW1, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***
Diode Silicon Carbide Schottky 65 V 16A (DC) Through Hole PG-TO247-3-1
***nell
SIC SCHOTTKY DIODE, 650V, 16A, TO-247; Product Range: thinQ 5G 650V Series; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 650V; Continuous Forward Current If: 16A; Total Capacitive Charge Qc: 23nC; Diode Case Style: TO-247; No. of Pins: 3 Pin; Junction Temperature Tj Max: 175°C; Automotive Qualification Standard: -; SVHC: No SVHC (27-Jun-2018); Forward Current If(AV): 16A; Forward Surge Current Ifsm Max: 95A; Forward Voltage VF Max: 1.7V; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Semiconductor Technology: SiC
***ineon
CoolSiC generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The new CoolSiC Generation 5 has been designed to complement our 650V CoolMOS families: this ensures meeting the most stringent application requirements in this voltage range. | Summary of Features: V br at 650V; Improved figure of merit (Q c x V f); No reverse recovery charge; Soft switching reverse recovery waveform; Temperature independent switching behavior; High operating temperature (T j max 175C); Improved surge capability; Pb-free lead plating | Benefits: Higher safety margin against overvoltage and complements CoolMOS offer; Improved efficiency over all load conditions; Increased efficiency compared to Silicon Diode alternatives; Reduced EMI compared to snappier Silicon diode reverse recovery waveform; Highly stable switching performance; Reduced cooling requirements; Reduced risks of thermal runaway; RoHS compliant; Very high quality and high volume manufacturing capability | Target Applications: Telecom/server SMPS; Solar; UPS; PC power; LED/LCD TV; Motor drives; HID lighting
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
型号 制造商 描述 库存 价格
IDW16G65C5XKSA1
DISTI # IDW16G65C5XKSA1-ND
Infineon Technologies AGDIODE SCHOTTKY 650V 16A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
431In Stock
  • 720:$4.6942
  • 240:$5.3907
  • 25:$6.2084
  • 10:$6.5110
  • 1:$7.2100
IDW16G65C5XKSA1
DISTI # SP001632898
Infineon Technologies AGSIC DIODES (Alt: SP001632898)
RoHS: Compliant
Min Qty: 1
Europe - 1
  • 1000:€3.2900
  • 500:€3.5900
  • 100:€3.6900
  • 50:€3.7900
  • 25:€3.9900
  • 10:€4.1900
  • 1:€4.4900
IDW16G65C5XKSA1
DISTI # IDW16G65C5XKSA1
Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDW16G65C5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$3.7900
  • 1440:$3.8900
  • 960:$3.9900
  • 480:$4.1900
  • 240:$4.2900
IDW16G65C5XKSA1
DISTI # 726-IDW16G65C5XKSA1
Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant
230
  • 1:$7.2000
  • 10:$6.5100
  • 25:$6.2000
  • 100:$5.3900
  • 250:$5.1400
  • 500:$4.6900
图片 型号 描述
RDBF38-13

Mfr.#: RDBF38-13

OMO.#: OMO-RDBF38-13

Bridge Rectifiers Bridge Rectifier
FT800Q-R

Mfr.#: FT800Q-R

OMO.#: OMO-FT800Q-R

Video ICs Graphic Controller EVE IC
STPS10M120SF

Mfr.#: STPS10M120SF

OMO.#: OMO-STPS10M120SF

Schottky Diodes & Rectifiers DFD RECTIFIER
IDH20G65C6XKSA1

Mfr.#: IDH20G65C6XKSA1

OMO.#: OMO-IDH20G65C6XKSA1

Schottky Diodes & Rectifiers SIC DIODES
SCS210KGHRC

Mfr.#: SCS210KGHRC

OMO.#: OMO-SCS210KGHRC

Schottky Diodes & Rectifiers 1200V 10A SiC SBD AEC-Q101 Qualified
IDW12G65C5XKSA1

Mfr.#: IDW12G65C5XKSA1

OMO.#: OMO-IDW12G65C5XKSA1

Schottky Diodes & Rectifiers SIC DIODES
FCH125N65S3R0-F155

Mfr.#: FCH125N65S3R0-F155

OMO.#: OMO-FCH125N65S3R0-F155

MOSFET SUPERFET3 650V 24A 125 mOhm
RDBF38-13

Mfr.#: RDBF38-13

OMO.#: OMO-RDBF38-13-DIODES

BRIDGE RECTIFIER DBF T&R 3K
STPS10M120SF

Mfr.#: STPS10M120SF

OMO.#: OMO-STPS10M120SF-STMICROELECTRONICS

120V POWER SCHOTTKY RECTIFIER
SCS210KGHRC

Mfr.#: SCS210KGHRC

OMO.#: OMO-SCS210KGHRC-ROHM-SEMI

DIODE SCHOTTKY 1200V 10A TO220-2
可用性
库存:
177
订购:
2160
输入数量:
IDW16G65C5XKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$7.20
US$7.20
10
US$6.51
US$65.10
25
US$6.20
US$155.00
100
US$5.39
US$539.00
250
US$5.14
US$1 285.00
500
US$4.69
US$2 345.00
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