IPB052N04N G

IPB052N04N G
Mfr. #:
IPB052N04N G
制造商:
INF
描述:
IGBT Transistors MOSFET N-Ch 40V 70A D2PAK-2
生命周期:
制造商新产品。
数据表:
IPB052N04N G 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
中频
产品分类
FET - 单
系列
IPB052N04
打包
卷轴
部分别名
IPB052N04NGATMA1
单位重量
0.139332 oz
安装方式
贴片/贴片
包装盒
TO-252-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
79 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
4 ns
上升时间
3.2 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
70 A
Vds-漏-源-击穿电压
40 V
Rds-On-Drain-Source-Resistance
5.2 mOhms
晶体管极性
N通道
典型关断延迟时间
19 ns
典型开启延迟时间
13 ns
通道模式
增强
Tags
IPB052N04NG, IPB052, IPB05, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
IPB052N04NGATMA1
DISTI # IPB052N04NGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 40V 70A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB052N04NGATMA1
    DISTI # IPB052N04NGATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 40V 70A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPB052N04NGATMA1
      DISTI # IPB052N04NGATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 40V 70A TO263-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPB052N04N G
        DISTI # 726-IPB052N04NG
        Infineon Technologies AGMOSFET N-Ch 40V 70A D2PAK-2
        RoHS: Compliant
        870
        • 1:$1.4500
        • 10:$1.1400
        • 100:$0.8430
        • 500:$0.8040
        • 1000:$0.6320
        • 2000:$0.5360
        • 5000:$0.5090
        • 10000:$0.4880
        IPB052N04NGInfineon Technologies AGPower Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant
        1989
        • 1000:$0.4400
        • 500:$0.4600
        • 100:$0.4800
        • 25:$0.5000
        • 1:$0.5400
        图片 型号 描述
        IPB052N04N

        Mfr.#: IPB052N04N

        OMO.#: OMO-IPB052N04N-1190

        全新原装
        IPB052N04NG

        Mfr.#: IPB052N04NG

        OMO.#: OMO-IPB052N04NG-1190

        Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        IPB052N04NGATMA1

        Mfr.#: IPB052N04NGATMA1

        OMO.#: OMO-IPB052N04NGATMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 40V 70A TO263-3
        IPB052N04N G

        Mfr.#: IPB052N04N G

        OMO.#: OMO-IPB052N04N-G-126

        IGBT Transistors MOSFET N-Ch 40V 70A D2PAK-2
        可用性
        库存:
        Available
        订购:
        1000
        输入数量:
        IPB052N04N G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$0.57
        US$0.57
        10
        US$0.54
        US$5.43
        100
        US$0.51
        US$51.42
        500
        US$0.49
        US$242.80
        1000
        US$0.46
        US$457.10
        从...开始
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