SIHP8N50DGE3

SIHP8N50DGE3
Mfr. #:
SIHP8N50DGE3
制造商:
Vishay Intertechnologies
描述:
Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
生命周期:
制造商新产品。
数据表:
SIHP8N50DGE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
Tags
SIHP8, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
SIHP8N50D-GE3
DISTI # SIHP8N50D-GE3-ND
Vishay SiliconixMOSFET N-CH 500V 8.7A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
819In Stock
  • 5000:$0.5656
  • 3000:$0.5954
  • 1000:$0.6379
  • 100:$0.9781
  • 25:$1.1908
  • 10:$1.2540
  • 1:$1.4000
SIHP8N50D-GE3
DISTI # SIHP8N50D-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 8.7A 3-Pin(3+Tab) TO-220AB - Tape and Reel (Alt: SIHP8N50D-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.5189
  • 6000:$0.5329
  • 4000:$0.5479
  • 2000:$0.5719
  • 1000:$0.5889
SIHP8N50D-GE3
DISTI # SIHP8N50D-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 8.7A 3-Pin(3+Tab) TO-220AB (Alt: SIHP8N50D-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.4789
  • 500:€0.4849
  • 100:€0.4929
  • 50:€0.4999
  • 25:€0.5659
  • 10:€0.6979
  • 1:€0.9729
SIHP8N50D-GE3
DISTI # 99W9515
Vishay IntertechnologiesMOSFET, N-CH, 500V, 8.7A, TO-220AB-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:8.7A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 10000:$0.5150
  • 6000:$0.5270
  • 4000:$0.5470
  • 2000:$0.6080
  • 1000:$0.6690
  • 1:$0.6970
SIHP8N50D-GE3
DISTI # 08X3793
Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 8.7A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:8.7A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes0
  • 500:$0.7940
  • 250:$0.8950
  • 100:$1.0700
  • 50:$1.1800
  • 25:$1.3100
  • 10:$1.4500
  • 1:$1.5300
SIHP8N50D-E3
DISTI # 78-SIHP8N50D-E3
Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-220AB
RoHS: Compliant
385
  • 1:$1.7400
  • 10:$1.4300
  • 100:$1.1000
  • 500:$0.9490
  • 1000:$0.7490
  • 2500:$0.6990
  • 5000:$0.6640
  • 10000:$0.6400
SIHP8N50D-GE3
DISTI # 78-SIHP8N50D-GE3
Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-220AB
RoHS: Compliant
273
  • 1:$1.4200
  • 10:$1.1700
  • 100:$0.8960
  • 500:$0.7700
  • 1000:$0.6080
  • 2500:$0.5670
  • 5000:$0.5390
  • 10000:$0.5190
SIHP8N50D-GE3
DISTI # 7879181
Vishay IntertechnologiesMOSFET N-CH 500V 8.7A LOW CAP. TO220AB, PK7175
  • 25:£0.3480
  • 5:£0.3600
SIHP8N50DGE3Vishay IntertechnologiesPower Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
900
    SIHP8N50D-GE3
    DISTI # 2283623
    Vishay IntertechnologiesMOSFET, N-CH, 500V, 8.7A, TO-220AB
    RoHS: Compliant
    1
    • 5000:$0.8550
    • 3000:$0.8980
    • 1000:$0.9620
    • 100:$1.4800
    • 25:$1.8000
    • 10:$1.8900
    • 1:$2.1100
    SIHP8N50D-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-220AB
    RoHS: Compliant
    Americas -
      图片 型号 描述
      SIHP8N50D-E3

      Mfr.#: SIHP8N50D-E3

      OMO.#: OMO-SIHP8N50D-E3

      MOSFET 500V Vds 30V Vgs TO-220AB
      SIHP8N50D-E3

      Mfr.#: SIHP8N50D-E3

      OMO.#: OMO-SIHP8N50D-E3-VISHAY

      Darlington Transistors MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS
      SIHP8N50D-GE3

      Mfr.#: SIHP8N50D-GE3

      OMO.#: OMO-SIHP8N50D-GE3-VISHAY

      MOSFET N-CH 500V 8.7A TO220AB
      SIHP8N50DGE3

      Mfr.#: SIHP8N50DGE3

      OMO.#: OMO-SIHP8N50DGE3-1190

      Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      可用性
      库存:
      Available
      订购:
      5500
      输入数量:
      SIHP8N50DGE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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