IS43TR85120AL-125KBL-TR

IS43TR85120AL-125KBL-TR
Mfr. #:
IS43TR85120AL-125KBL-TR
制造商:
ISSI
描述:
DRAM 4G, 1.35V, 1600MT/s 512M x 8 DDR3L
生命周期:
制造商新产品。
数据表:
IS43TR85120AL-125KBL-TR 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IS43TR85120AL-125KBL-TR 更多信息
产品属性
属性值
制造商:
国际空间站
产品分类:
动态随机存取存储器
RoHS:
Y
类型:
SDRAM - DDR3L
数据总线宽度:
8 bit
组织:
512 M x 8
包装/案例:
BGA-78
内存大小:
4 Gbit
最大时钟频率:
933 MHz
访问时间:
-
电源电压 - 最大值:
1.45 V
电源电压 - 最小值:
1.283 V
电源电流 - 最大值:
230 mA
最低工作温度:
0 C
最高工作温度:
+ 95 C
系列:
IS43TR85120AL
打包:
卷轴
品牌:
国际空间站
安装方式:
贴片/贴片
湿气敏感:
是的
产品类别:
动态随机存取存储器
出厂包装数量:
1500
子类别:
内存和数据存储
Tags
IS43TR85120AL-12, IS43TR85120AL, IS43TR85120A, IS43TR85, IS43TR8, IS43T, IS43, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
4G, 1.35V, DDR3L, 512Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (9mm x10.5mm) RoHS, T&R
***et
DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.35V 78-Pin TW-BGA T/R
***i-Key
IC DRAM 4G PARALLEL 78TWBGA
4GBit DDR3 SDRAM
ISSI 4GBit DDR3 SDRAM delivers high speed SDRAM in compact BGA-78 and BGA-96 packages. ISSI 4GBit DDR3 SDRAM features 256Mx16 organization and supply voltage at either 1.45V or 1.3V with a maximum clock frequency of 666MHz or 800MHz. This SDRAM has 8 internal banks for concurrent operation and 8nBit pre-fetch architecture. Applications include Telecom and Networking, Automotive, and Industrial embedded computing.
DDR3 SDRAM
ISSI DDR3 SDRAM delivers high-speed data transfer rates up to 2133Mbps in a small BGA-96 or BGA-78 package. ISSI DDR3 SDRAM is available in a 64Mx16, 128Mx8, 128Mx16, 256Mx8, or  256Mx16 organization. Features include bidirectional differential data strobe, data masking per byte on Write commands, programmable burst length of 4 or 8, and programmable CAS latency. The ISSI DDR3 SDRAMs are well-suited for telecom & networking, automotive, and industrial embedded computing.
图片 型号 描述
IS43TR85120AL-125KBL-TR

Mfr.#: IS43TR85120AL-125KBL-TR

OMO.#: OMO-IS43TR85120AL-125KBL-TR

DRAM 4G, 1.35V, 1600MT/s 512M x 8 DDR3L
IS43TR85120BL-125KBLI-TR

Mfr.#: IS43TR85120BL-125KBLI-TR

OMO.#: OMO-IS43TR85120BL-125KBLI-TR

DRAM 4G, 1.35V, DDR3L, 512Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (9mm x10.5mm) RoHS, IT, T&R
IS43TR85120A-125KBLI-TR

Mfr.#: IS43TR85120A-125KBLI-TR

OMO.#: OMO-IS43TR85120A-125KBLI-TR

DRAM 4G, 1.5V, 1600MT/s 512M x 8 DDR3
IS43TR85120A-15HBLI-TR

Mfr.#: IS43TR85120A-15HBLI-TR

OMO.#: OMO-IS43TR85120A-15HBLI-TR

DRAM 4G, 1.5V, 1333MT/s 512M x 8 DDR3
IS43TR85120AL-125KBLI-TR

Mfr.#: IS43TR85120AL-125KBLI-TR

OMO.#: OMO-IS43TR85120AL-125KBLI-TR

DRAM 4G, 1.35V, 1600MT/s 512M x 8 DDR3L
IS43TR85120A-15HBLI

Mfr.#: IS43TR85120A-15HBLI

OMO.#: OMO-IS43TR85120A-15HBLI

DRAM 4G, 1.5V, 1333MT/s 512M x 8 DDR3
IS43TR85120B-125KBL

Mfr.#: IS43TR85120B-125KBL

OMO.#: OMO-IS43TR85120B-125KBL

DRAM 4G, 1.5V, DDR3, 512Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (9mm x10.5mm) RoHS
IS43TR85120A-125KBL-TR

Mfr.#: IS43TR85120A-125KBL-TR

OMO.#: OMO-IS43TR85120A-125KBL-TR-INTEGRATED-SILICON-SOLUTION

DRAM 4G, 1.5V, 1600MT/s 512M x 8 DDR3
IS43TR85120AL-125KBL

Mfr.#: IS43TR85120AL-125KBL

OMO.#: OMO-IS43TR85120AL-125KBL-INTEGRATED-SILICON-SOLUTION

DRAM 4G, 1.35V, 1600MT/s 512M x 8 DDR3L
IS43TR85120A-125KBLI-

Mfr.#: IS43TR85120A-125KBLI-

OMO.#: OMO-IS43TR85120A-125KBLI--1190

全新原装
可用性
库存:
Available
订购:
4500
输入数量:
IS43TR85120AL-125KBL-TR的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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