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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| H5N2007FN-E | Renesas Electronics Corporation | Power Field-Effect Transistor, 25A I(D), 200V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 466 |
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| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: H5N2004DL OMO.#: OMO-H5N2004DL-1190 |
全新原装 |
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Mfr.#: H5N2004DS OMO.#: OMO-H5N2004DS-1190 |
全新原装 |
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Mfr.#: H5N2007 OMO.#: OMO-H5N2007-1190 |
全新原装 |
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Mfr.#: H5N2008 OMO.#: OMO-H5N2008-1190 |
全新原装 |
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Mfr.#: H5N2504DS OMO.#: OMO-H5N2504DS-1190 |
全新原装 |
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Mfr.#: H5N2508DS OMO.#: OMO-H5N2508DS-1190 |
全新原装 |
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Mfr.#: H5N2512FL-M0 OMO.#: OMO-H5N2512FL-M0-1190 |
全新原装 |
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Mfr.#: H5N2512FN OMO.#: OMO-H5N2512FN-1190 |
全新原装 |
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Mfr.#: H5N2515P OMO.#: OMO-H5N2515P-1190 |
全新原装 |
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Mfr.#: H5N2522LSTL-E |
Trans MOSFET N-CH Si 250V 20A 3-Pin(2+Tab) LDPAK(S)-1 T/R |