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VN2410L-G-P013

VN2410L-G-P013
Mfr. #:
VN2410L-G-P013
制造商:
Microchip Technology
描述:
MOSFET N-CH Enhancmnt Mode MOSFET
生命周期:
制造商新产品。
数据表:
VN2410L-G-P013 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
VN2410L-G-P013 更多信息 VN2410L-G-P013 Product Details
产品属性
属性值
制造商：
微芯片
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-92-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
240 V
Id - 连续漏极电流：
190 mA
Rds On - 漏源电阻：
10 Ohms
Vgs - 栅源电压：
20 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
1 W
配置：
单身的
频道模式：
增强
打包：
弹药包
产品：
MOSFET 小信号
晶体管类型：
1 N-Channel
品牌：
微芯科技
秋季时间：
24 ns
产品类别：
MOSFET
上升时间：
8 ns
出厂包装数量：
2000
子类别：
MOSFET
典型关断延迟时间：
23 ns
典型的开启延迟时间：
8 ns
单位重量：
0.016000 oz
Tags
VN2410L-G, VN2410L, VN241, VN24, VN2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V, 10 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES
***et
Trans MOSFET N-CH 240V 0.19A 3-Pin TO-92 T/R
***roFlash
Small Signal Field-Effect Transistor, 0.15A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***hard Electronics
Transistor: P-MOSFET; unipolar; -100V; -0.23A; 0.7W; TO92
***ure Electronics
P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET - TO-92
***ark
P CH DMOS FET, -100V, 230mA, TO-92; Transistor Polarity:P Channel; Continuous Drain Current, Id:230mA; Drain Source Voltage, Vds:-100V; On Resistance, Rds(on):8ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-3.5V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:700mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:230mA; Current Temperature:25°C; Device Marking:ZVP2110A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Power Dissipation Ptot Max:700mW; Pulse Current Idm:3A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-3.5V; Voltage Vgs Rds on Measurement:-10V
***et Europe
Trans MOSFET P-CH 100V 0.23A 3-Pin E-Line Box
***ure Electronics
P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET
***roFlash
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***ical
Trans MOSFET P-CH 240V 0.2A Automotive 3-Pin E-Line
***ure Electronics
P-Channel 240 V 1 A 750 mW Vertical DMOS FET - TO-92
***ark
Mosfet Bvdss: 101V~250V Ep3sc T&R 4K Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET P-Channel 240V 0.2A E-Line
***nell
MOSFET, P, LOGIC, E-LINE; Transistor Polarity: P Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: -240V; On Resistance Rds(on): 15ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power D
***S
French Electronic Distributor since 1988
***ukat
P-Ch -240V -0,2A 0,75W 9R E-Line
***et Europe
Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***r Electronics
Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***p One Stop Global
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***el Electronic
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***icroelectronics
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in TO-92 package
***et
Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 Ammo Pack
*** Electronic Components
MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET
***r Electronics
Small Signal Field-Effect Transistor
***el Electronic
CAP CER 2200PF 250V C0G RADIAL
型号 制造商 描述 库存 价格
VN2410L-G-P013
DISTI # VN2410L-G-P013-ND		Microchip Technology IncMOSFET N-CH 240V 0.19A TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Box (TB)		Temporarily Out of Stock
  • 2000:$0.7416
VN2410L-G-P013
DISTI # VN2410L-G-P013		Microchip Technology IncTrans MOSFET N-CH 240V 0.19A 3-Pin TO-92 T/R - Ammo Pack (Alt: VN2410L-G-P013)
RoHS: Compliant
Min Qty: 2000
Container: Ammo Pack		Americas - 0
  • 2000:$0.5109
  • 4000:$0.4939
  • 8000:$0.4779
  • 12000:$0.4629
  • 20000:$0.4559
VN2410L-G-P013
DISTI # 70483926		Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,240V,10 Ohm3 TO-92AMMO
RoHS: Compliant		0
  • 2000:$1.0500
VN2410L-G-P013
DISTI # 689-VN2410L-G-P013		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
RoHS: Compliant		894
  • 1:$0.9800
  • 10:$0.9650
  • 25:$0.8140
  • 100:$0.7420
VN2410L-G-P013
DISTI # VN2410L-G-P013		Microchip Technology IncMOSFETN-CHANNEL ENHANCEMENT-MODE240V10 Ohm
RoHS: Compliant		0
  • 1000:$0.6000
  • 100:$0.7200
  • 26:$0.7900
  • 1:$0.9500
图片 型号 描述
VN2410L-G-P013

Mfr.#: VN2410L-G-P013

OMO.#: OMO-VN2410L-G-P013

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可用性
库存:
894
订购:
2877
输入数量:
VN2410L-G-P013的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.97
US$0.97
10
US$0.96
US$9.64
25
US$0.81
US$20.33
100
US$0.74
US$74.10
250
US$0.65
US$163.00
500
US$0.56
US$278.00
1000
US$0.51
US$506.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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