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CY7C2170KV18-400BZXC

CY7C2170KV18-400BZXC
Mfr. #:
CY7C2170KV18-400BZXC
制造商:
Cypress Semiconductor
描述:
SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
生命周期:
制造商新产品。
数据表:
CY7C2170KV18-400BZXC 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
CY7C2170KV18-400BZXC 更多信息 CY7C2170KV18-400BZXC Product Details
产品属性
属性值
制造商：
赛普拉斯半导体
产品分类：
静态随机存取存储器
RoHS：
Y
内存大小：
18 Mbit
组织：
512 k x 36
最大时钟频率：
400 MHz
接口类型：
平行线
电源电压 - 最大值：
1.9 V
电源电压 - 最小值：
1.7 V
电源电流 - 最大值：
640 mA
最低工作温度：
0 C
最高工作温度：
+ 70 C
安装方式：
贴片/贴片
包装/案例：
FBGA-165
打包：
托盘
内存类型：
DDR
系列：
CY7C2170KV18
类型：
同步
品牌：
赛普拉斯半导体
湿气敏感：
是的
产品类别：
静态随机存取存储器
出厂包装数量：
136
子类别：
内存和数据存储
Tags
CY7C2170K, CY7C217, CY7C21, CY7C2, CY7C, CY7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***h
    M***h
    RU

    Good quality, corresponds to the description.

    2019-01-29
    M***v
    M***v
    BG

    2 months shipping

    2019-06-04
***ical
SRAM Chip Sync Dual 1.8V 18M-bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II+ CIO, 18 Mbit Density, BGA-165, RoHS
***ponent Stockers USA
512K X 36 DDR SRAM 0.45 ns PBGA165
***or
DDR SRAM, 512KX36, 0.45NS PBGA16
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***ure Electronics
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II+ CIO, 18 Mbit Density, BGA-165, RoHS
***or
DDR SRAM, 512KX36, 0.45NS PBGA16
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II+ CIO, 18 Mbit Density, BGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***ical
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
Synchronous SRAM, QDR-II+, 18432 Kb Density, 400 MHz Frequency, BGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin LFBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA
***I SCT
1Mx18, 250Mhz, SRAM, FBGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***enic
LFBGA-165(15x17) SRAM ROHS
Synchronous SRAM
Cypress Synchronous SRAM offers true random memory access capabilities required for networking and other high performance applications. The Cypress Synchronous SRAM portfolio is available with a number of features designed to solve networking and high performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with a variety of speeds, word widths, densities, and packages. Cypress Synchronous SRAM devices areideal for a wide range of applications including high-speed network switches & routers, communications infrastructure, test equipment, imaging & video and high performance computing.Learn More
Cypress QDR-II+ DDR-II+ Sync SRAM
Cypress' QDR-II+ is a high performance, dual-port SRAM memory. QDR-II+ SRAM offers a maximum speed of 550 MHz, densities up to 144 Mb, read latencies of 2 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. QDR-II+ products also offer optional programmable On-Die Termination (ODT). The QDR-II+ family also includes double data rate (DDR-II+) devices. DDR-II+ devices are similar to QDR-II+ devices except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II+ is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and writes, reducing the number of required data pin connections.Learn More
型号 制造商 描述 库存 价格
CY7C2170KV18-400BZXC
DISTI # CY7C2170KV18-400BZXC-ND		Cypress SemiconductorIC SRAM 18M PARALLEL 165FBGA
RoHS: Compliant
Min Qty: 1
Container: Tray		95In Stock
  • 272:$32.7783
  • 136:$33.7082
  • 50:$38.4868
  • 25:$39.4684
  • 10:$40.9150
  • 1:$44.1200
CY7C2170KV18-400BZXCCypress SemiconductorDDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165
RoHS: Compliant		442
  • 1000:$37.2200
  • 500:$39.1800
  • 100:$40.7900
  • 25:$42.5400
  • 1:$45.8100
CY7C2170KV18-400BZXC
DISTI # 727-7C2170KV400BZXC		Cypress SemiconductorSRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
RoHS: Compliant		0
  • 136:$32.0100
图片 型号 描述
CY7C2170KV18-550BZXC

Mfr.#: CY7C2170KV18-550BZXC

OMO.#: OMO-CY7C2170KV18-550BZXC

 SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
CY7C2170KV18-400BZXC

Mfr.#: CY7C2170KV18-400BZXC

OMO.#: OMO-CY7C2170KV18-400BZXC

 SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
CY7C2170KV18-400BZC

Mfr.#: CY7C2170KV18-400BZC

OMO.#: OMO-CY7C2170KV18-400BZC

 SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
CY7C2170KV18-400BZC

Mfr.#: CY7C2170KV18-400BZC

OMO.#: OMO-CY7C2170KV18-400BZC-CYPRESS-SEMICONDUCTOR

 IC SRAM 18M PARALLEL 165FBGA
CY7C2170KV18-550BZXC

Mfr.#: CY7C2170KV18-550BZXC

OMO.#: OMO-CY7C2170KV18-550BZXC-CYPRESS-SEMICONDUCTOR

 SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
CY7C2170KV18-400BZXC

Mfr.#: CY7C2170KV18-400BZXC

OMO.#: OMO-CY7C2170KV18-400BZXC-CYPRESS-SEMICONDUCTOR

 SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
可用性
库存:
Available
订购:
1000
输入数量:
CY7C2170KV18-400BZXC的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
136
US$32.01
US$4 353.36
272
US$31.51
US$8 570.72
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