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IXYN82N120C3H1

IXYN82N120C3H1
Mfr. #:
IXYN82N120C3H1
制造商:
Littelfuse
描述:
IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack
生命周期:
制造商新产品。
数据表:
IXYN82N120C3H1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
IXYN82N120C3H1 DatasheetIXYN82N120C3H1 Datasheet (P4-P6)IXYN82N120C3H1 Datasheet (P7)
ECAD Model:
更多信息:
IXYN82N120C3H1 更多信息
产品属性
属性值
制造商：
IXYS
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
SOT-227B-4
安装方式：
贴片/贴片
配置：
单身的
集电极-发射极电压 VCEO 最大值：
1200 V
集电极-发射极饱和电压：
2.75 V
最大栅极发射极电压：
30 V
25 C 时的连续集电极电流：
105 A
Pd - 功耗：
500 W
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
IXYN82N120
打包：
管子
连续集电极电流 Ic 最大值：
105 A
品牌：
IXYS
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
10
子类别：
IGBT
商品名：
XPT
单位重量：
1.058219 oz
Tags
IXYN8, IXYN, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 10, IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 105 A Chassis Mount High-Speed IGBT - SOT-227B
***ical
Trans IGBT Chip N-CH 1200V 105A 500000mW Automotive 4-Pin SOT-227B
***i-Key
IGBT MODULE 1200V 105A SOT227B
***ark
Igbt, N-Ch, 1.2Kv, 105A, Sot-227B; Transistor Polarity:n Channel; Dc Collector Current:105A; Collector Emitter Saturation Voltage Vce(On):3.2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, N-CH, 1.2KV, 105A, SOT-227B; Transistor Polarity:N Channel; DC Collector Current:105A; Collector Emitter Saturation Voltage Vce(on):3.2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:SOT-227B; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:XPT GenX3 Series; SVHC:No SVHC (12-Jan-2017)
***nell
IGBT, CA-N, 1,2KV, 105A, SOT-227B; Polarità Transistor:Canale N; Corrente di Collettore CC:105A; Tensione Saturaz Collettore-Emettitore Vce(on):3.2V; Dissipazione di Potenza Pd:500W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:SOT-227B; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:XPT GenX3 Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
型号 制造商 描述 库存 价格
IXYN82N120C3H1
DISTI # 23829664		IXYS CorporationTrans IGBT Chip N-CH 1.2KV 105A 4-Pin SOT-227B
RoHS: Compliant		220
  • 10:$29.5733
IXYN82N120C3H1
DISTI # IXYN82N120C3H1-ND		IXYS CorporationIGBT MODULE 1200V 105A SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube		136In Stock
  • 250:$27.5500
  • 100:$30.0200
  • 30:$32.3000
  • 10:$35.1500
  • 1:$38.0000
IXYN82N120C3H1
DISTI # 747-IXYN82N120C3H1		IXYS CorporationIGBT Transistors XPT IGBT C3-Class 1200V/105A,Copack
RoHS: Compliant		37
  • 1:$38.0000
  • 5:$36.1000
  • 10:$35.1500
  • 25:$32.3000
  • 50:$31.5200
  • 100:$30.0200
  • 200:$27.5500
IXYN82N120C3H1IXYS CorporationGenX3 XPT IGBT 1200 V 105 A Chassis Mount High-Speed IGBT - SOT-227B
RoHS: Compliant		370Tube
  • 1:$28.1600
  • 2:$26.7700
  • 5:$25.0200
  • 10:$23.7800
  • 25:$21.1200
IXYN82N120C3H1
DISTI # 8047622		IXYS CorporationIGBT 1200V 105A XPT GENX3 DIODE SOT227B, EA3
  • 1:£27.4900
  • 2:£27.3600
  • 5:£27.2200
  • 10:£24.4600
  • 30:£23.3600
IXYN82N120C3H1
DISTI # 2674802		IXYS CorporationIGBT, N-CH, 1.2KV, 105A, SOT-227B
RoHS: Compliant		0
  • 1:£28.7500
  • 5:£27.3100
  • 10:£24.4400
  • 50:£23.8400
  • 100:£20.8400
IXYN82N120C3H1
DISTI # XSFT00000023520		IXYS CorporationGENX3 XPT IGBT 1200 V 105 A CHASSIS MOUNTHIGH-SPEED IGBT - SOT-227B
RoHS: Compliant		280
  • 10:$35.6400
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可用性
库存:
Available
订购:
4000
输入数量:
IXYN82N120C3H1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$38.00
US$38.00
5
US$36.10
US$180.50
10
US$35.15
US$351.50
25
US$32.30
US$807.50
50
US$31.52
US$1 576.00
100
US$30.02
US$3 002.00
200
US$27.55
US$5 510.00
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