FDD6612A

Mfr. #:: FDD6612A
制造商:: ON Semiconductor
描述:: MOSFET N-CH 30V 9.5A DPAK
生命周期:: 制造商新产品。
数据表:: FDD6612A 数据表
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产品属性
属性值

制造商: 仙童半导体

产品分类: FET - 单

系列: 动力战壕

打包: Digi-ReelR 替代包装

部分别名: FDD6612A_NL

单位重量: 0.009184 oz

安装方式: 贴片/贴片

包装盒: TO-252-3, DPak (2 Leads + Tab), SC-63

技术: 硅

工作温度: -55°C ~ 175°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: TO-252-3

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 1.3W

晶体管型: 1 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 660pF @ 15V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 9.5A (Ta), 30A (Tc)

Rds-On-Max-Id-Vgs: 20 mOhm @ 9.5A, 10V

Vgs-th-Max-Id: 3V @ 250μA

栅极电荷-Qg-Vgs: 9.4nC @ 5V

钯功耗: 2.8 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 4 ns

上升时间: 5 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 30 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 15 mOhms

晶体管极性: N通道

典型关断延迟时间: 24 ns

典型开启延迟时间: 9 ns

正向跨导最小值: 28 S

通道模式: 增强

Tags: FDD6612A, FDD661, FDD66, FDD6, FDD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD6612A 描述

***emi: N-Channel PowerTrench® MOSFET, 30V, 30A, 20mΩ

***ure Electronics: N-Channel 30 V 20 mOhm Surface Mount PowerTrench Mosfet TO-252-3

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:30A; On Resistance, Rds(on):20mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252 ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

Market price

型号	制造商	描述	库存	价格
FDD6612A DISTI # 31022028	ON Semiconductor	DPAK SINGLE NCH	2500	2500:$0.3920
FDD6612A DISTI # FDD6612ACT-ND	ON Semiconductor	MOSFET N-CH 30V 9.5A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2796In Stock	1000:$0.4310 500:$0.5459 100:$0.7040 10:$0.8910 1:$1.0100
FDD6612A DISTI # FDD6612ADKR-ND	ON Semiconductor	MOSFET N-CH 30V 9.5A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2796In Stock	1000:$0.4310 500:$0.5459 100:$0.7040 10:$0.8910 1:$1.0100
FDD6612A DISTI # FDD6612ATR-ND	ON Semiconductor	MOSFET N-CH 30V 9.5A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.3905
FDD6612A DISTI # C1S541901389334	ON Semiconductor	Trans MOSFET N-CH 30V 9.5A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.5020
FDD6612A DISTI # FDD6612A	ON Semiconductor	Trans MOSFET N-CH 30V 9.5A 3-Pin(2+Tab) DPAK T/R (Alt: FDD6612A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 2500	2500:€0.4259 5000:€0.3479 10000:€0.3189 15000:€0.2939 25000:€0.2729
FDD6612A DISTI # FDD6612A	ON Semiconductor	Trans MOSFET N-CH 30V 9.5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD6612A) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3019 5000:$0.2999 10000:$0.2959 15000:$0.2929 25000:$0.2849
FDD6612A DISTI # 34C0123	ON Semiconductor	Trans MOSFET N-CH 30V 9.5A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 34C0123) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.8660 10:$0.7360 25:$0.6810 50:$0.6270 100:$0.5720 250:$0.5400 500:$0.5080
FDD6612A DISTI # 34C0123	ON Semiconductor	N CHANNEL MOSFET, 30V, 30A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Product Range:-RoHS Compliant: Yes	759	1:$0.8660 10:$0.7360 25:$0.6810 50:$0.6270 100:$0.5720 250:$0.5400 500:$0.5080 1000:$0.4070
FDD6612A	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	285375	1000:$0.4900 500:$0.5100 100:$0.5300 25:$0.5600 1:$0.6000
FDD6612A	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-252AA	2223	596:$0.3000 126:$0.3360 1:$0.9600
FDD6612A	ON Semiconductor	30V N-CHANNEL POWER TRENCH MOSFET DPAK-3 RoHS: Compliant	Europe - 2500
FDD6612A	Fairchild Semiconductor Corporation	INSTOCK	1367
FDD6612A.. DISTI # 4900017	ON Semiconductor	N CHANNEL MOSFET, 30V, 30A, TO-252 RoHS: Compliant	759	1:$1.3400 10:$1.1300 100:$0.8650 500:$0.7630 1000:$0.6030 2500:$0.5350
FDD6612A.. DISTI # 4900017	ON Semiconductor	N CHANNEL MOSFET, 30V, 30A, TO-252 RoHS: Compliant	759	1:£0.7620 10:£0.6470 25:£0.5990 50:£0.5510 100:£0.5030

图片	型号	描述
	Mfr.#: FDD6030BL OMO.#: OMO-FDD6030BL-1190	MOSFET 30V N-Ch PowerTrench
	Mfr.#: FDD6030BLFSC OMO.#: OMO-FDD6030BLFSC-1190	全新原装
	Mfr.#: FDD6035 OMO.#: OMO-FDD6035-1190	全新原装
	Mfr.#: FDD6035ALFSC OMO.#: OMO-FDD6035ALFSC-1190	全新原装
	Mfr.#: FDD6606-NL OMO.#: OMO-FDD6606-NL-1190	全新原装
	Mfr.#: FDD6644F054 OMO.#: OMO-FDD6644F054-1190	全新原装
	Mfr.#: FDD6685_Q OMO.#: OMO-FDD6685-Q-1190	全新原装
	Mfr.#: FDD6688S-NL OMO.#: OMO-FDD6688S-NL-1190	全新原装
	Mfr.#: FDD6692A OMO.#: OMO-FDD6692A-1190	全新原装
	Mfr.#: FDD6690A-CUT TAPE OMO.#: OMO-FDD6690A-CUT-TAPE-1190	全新原装

FDD6612A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes