IXTH36N20T

IXTH36N20T
Mfr. #:
IXTH36N20T
制造商:
Littelfuse
描述:
MOSFET 36 Amps 200V 60 Rds
生命周期:
制造商新产品。
数据表:
IXTH36N20T 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
IXYS
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-247-3
晶体管极性:
N通道
Vds - 漏源击穿电压:
200 V
Id - 连续漏极电流:
36 A
Rds On - 漏源电阻:
60 Ohms
打包:
管子
系列:
IXTH36N20
品牌:
IXYS
产品类别:
MOSFET
出厂包装数量:
30
子类别:
MOSFET
单位重量:
0.229281 oz
Tags
IXTH36, IXTH3, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET N-CH 200V 36A TO-247
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.075Ohm;ID 30A;TO-247AC;PD 214W;VGS +/-20V
***el Electronic
INFINEON IRFP250N MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V
***ure Electronics
Single N-Channel 200 V 0.075 Ohm 123 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
***roFlash
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, 30A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:214W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Junction to Case Thermal Resistance A:0.83°C/W; Package / Case:TO-247AC; Power Dissipation Pd:214W; Power Dissipation Pd:214W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
***ure Electronics
Single N-Channel 200 V 75 mOhm 123 nC HEXFET® Power Mosfet - TO-247AC
***nell
MOSFET, N-CH, 200V, 30A, TO-247AC-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 33 / Rise Time ns = 43 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AD / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 214
*** Electronics
MOSFET Operating temperature: -40...+175 °C Housing type: TO-247 Power dissipation: 150 W
***ineon SCT
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-247AC package, TO247-3, RoHS
***(Formerly Allied Electronics)
MOSFET, N Ch., 250V, 44A, 46 MOHM, 72 NC QG, TO-247AC, Pb-Free
***ure Electronics
Single N-Channel 250 V 46 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
***ment14 APAC
MOSFET, N, 250V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:300V; On Resistance Rds(on):38mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4229; Current Id Max:44A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:180A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
型号 制造商 描述 库存 价格
IXTH36N20T
DISTI # IXTH36N20T-ND
IXYS CorporationMOSFET N-CH 200V 36A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$2.7473
IXTH36N20T
DISTI # 747-IXTH36N20T
IXYS CorporationMOSFET 36 Amps 200V 60 Rds
RoHS: Compliant
0
  • 1:$3.5700
  • 10:$3.1900
  • 25:$2.7800
  • 50:$2.7200
  • 100:$2.6200
  • 250:$2.2300
  • 500:$2.1200
  • 1000:$1.7900
  • 2500:$1.5300
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IXTH30N60L2

Mfr.#: IXTH30N60L2

OMO.#: OMO-IXTH30N60L2

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IXTH32P20T

Mfr.#: IXTH32P20T

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IXTH35N30

Mfr.#: IXTH35N30

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全新原装
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Mfr.#: IXTH30N25

OMO.#: OMO-IXTH30N25-IXYS-CORPORATION

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IXTH36P15P

Mfr.#: IXTH36P15P

OMO.#: OMO-IXTH36P15P-IXYS-CORPORATION

IGBT Transistors MOSFET PolarP Power MOSFETs
IXTH360N055T2

Mfr.#: IXTH360N055T2

OMO.#: OMO-IXTH360N055T2-IXYS-CORPORATION

IGBT Transistors MOSFET 360Amps 55V
IXTH36N50P

Mfr.#: IXTH36N50P

OMO.#: OMO-IXTH36N50P-IXYS-CORPORATION

IGBT Transistors MOSFET 36.0 Amps 500 V 0.17 Ohm Rds
可用性
库存:
Available
订购:
2000
输入数量:
IXTH36N20T的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$3.57
US$3.57
10
US$3.19
US$31.90
25
US$2.78
US$69.50
50
US$2.72
US$136.00
100
US$2.62
US$262.00
250
US$2.23
US$557.50
500
US$2.12
US$1 060.00
1000
US$1.79
US$1 790.00
2500
US$1.53
US$3 825.00
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