IDH20G65C5XKSA2

Mfr. #:: IDH20G65C5XKSA2
制造商:: Infineon Technologies
描述:: DIODE SCHOTKY 650V 20A TO220-2-1
生命周期:: 制造商新产品。
数据表:: IDH20G65C5XKSA2 数据表
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ECAD Model:
更多信息:: IDH20G65C5XKSA2 更多信息

产品属性
属性值

Tags: IDH20G65C5, IDH20G6, IDH20G, IDH20, IDH2, IDH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IDH20G65C5XKSA2 描述

***et Europe: Diode Schottky 650V 20A 2-Pin TO-220 Tube

***Components: SIC SCHOTTKY DIODE THINQ 650V 20A TO220

***ronik: SiC-Diode 20A 650V 1,80V TO220

***ark: Discretes, Schottky Diodes, Sic - Silicon Carbide Schottky Diodes

***i-Key: DIODE SCHOTKY 650V 20A TO220-2-1

***ukat: SiC-Schottky 650V 20A TO220AC

***ical: Diode Schottky 650V 20A

***ineon: CoolSiC generation 5 represents Infineons leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). | Summary of Features: V br at 650V; Improved figure of merit (Q c x V f); No reverse recovery charge; Soft switching reverse recovery waveform; Temperature independent switching behavior; High operating temperature (T j max 175C); Improved surge capability; Pb-free lead plating | Benefits: Higher safety margin against overvoltage and complements CoolMOS offer; Improved efficiency over all load conditions; Increased efficiency compared to Silicon Diode alternatives; Reduced EMI compared to snappier Silicon diode reverse recovery waveform; Highly stable switching performance; Reduced cooling requirements; Reduced risks of thermal runaway; RoHS compliant; Very high quality and high volume manufacturing capability | Target Applications: Telecom/server SMPS; Solar; UPS; PC power; LED/LCD TV; Motor drives; HID lighting

IDH20G65C5XKSA2 更多信息

CoolSiC™ Schottky Diodes: Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.

Market price

型号	制造商	描述	库存	价格
IDH20G65C5XKSA2 DISTI # IDH20G65C5XKSA2-ND	Infineon Technologies AG	DIODE SCHOTKY 650V 20A TO220-2-1 RoHS: Compliant Min Qty: 1 Container: Tube	500In Stock	1000:$4.9878 500:$5.7267 100:$6.5765 10:$7.9430 1:$8.7900
IDH20G65C5XKSA2 DISTI # IDH20G65C5XKSA2	Infineon Technologies AG	SIC DIODES - Rail/Tube (Alt: IDH20G65C5XKSA2) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$4.9900 1000:$4.7900 2000:$4.6900 3000:$4.4900 5000:$4.3900
IDH20G65C5XKSA2 DISTI # SP001632412	Infineon Technologies AG	SIC DIODES (Alt: SP001632412) RoHS: Compliant Min Qty: 1	Europe - 0	1:€5.2900 10:€4.7900 25:€4.5900 50:€4.4900 100:€4.2900 500:€4.0900 1000:€3.8900
IDH20G65C5XKSA2. DISTI # 70AC6665	Infineon Technologies AG	DISCRETES, SCHOTTKY DIODES, SIC - SILICON CARBIDE SCHOTTKY DIODES	0	1:$6.3500
IDH20G65C5XKSA2 DISTI # 726-IDH20G65C5XKSA2	Infineon Technologies AG	Schottky Diodes & Rectifiers SIC DIODES RoHS: Compliant	500	1:$8.3700 10:$7.5700 25:$7.2200 100:$6.2700 250:$5.9900 500:$5.4600 1000:$4.7600
IDH20G65C5XKSA2 DISTI # 9063025P	Infineon Technologies AG	SIC SCHOTTKY DIODE THINQ 650V 20A TO220, TU	12	50:£6.4800 20:£6.8900 10:£7.2900 3:£7.6700

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