IKB30N65ES5ATMA1

IKB30N65ES5ATMA1
Mfr. #:
IKB30N65ES5ATMA1
制造商:
Infineon Technologies
描述:
IGBT Transistors INDUSTRY 14
生命周期:
制造商新产品。
数据表:
IKB30N65ES5ATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IKB30N65ES5ATMA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-263-3
安装方式:
贴片/贴片
配置:
单身的
集电极-发射极电压 VCEO 最大值:
650 V
集电极-发射极饱和电压:
1.35 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
62 A
Pd - 功耗:
188 W
最低工作温度:
- 40 C
最高工作温度:
+ 175 C
打包:
卷轴
连续集电极电流 Ic 最大值:
62 A
品牌:
英飞凌科技
栅极-发射极漏电流:
100 nA
产品类别:
IGBT晶体管
出厂包装数量:
1000
子类别:
IGBT
第 # 部分别名:
IKB30N65ES5 SP001502572
Tags
IKB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
型号 制造商 描述 库存 价格
IKB30N65ES5ATMA1
DISTI # IKB30N65ES5ATMA1-ND
Infineon Technologies AGINDUSTRY 14
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$2.1296
IKB30N65ES5ATMA1
DISTI # IKB30N65ES5ATMA1
Infineon Technologies AGINDUSTRY 14 - Tape and Reel (Alt: IKB30N65ES5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$1.7900
  • 10000:$1.7900
  • 4000:$1.8900
  • 1000:$1.9900
  • 2000:$1.9900
IKB30N65ES5ATMA1
DISTI # 726-IKB30N65ES5ATMA1
Infineon Technologies AGIGBT Transistors INDUSTRY 14
RoHS: Compliant
1000
  • 1:$3.8400
  • 10:$3.2600
  • 100:$2.8300
  • 250:$2.6900
  • 500:$2.4100
  • 1000:$2.0300
  • 2000:$1.9300
IKB30N65ES5ATMA1
DISTI # XSKDRABV0044120
Infineon Technologies AG 
RoHS: Compliant
3000 in Stock0 on Order
  • 3000:$2.8560
  • 1000:$3.0600
图片 型号 描述
IKB30N65ES5ATMA1

Mfr.#: IKB30N65ES5ATMA1

OMO.#: OMO-IKB30N65ES5ATMA1

IGBT Transistors INDUSTRY 14
IKB30N65EH5ATMA1

Mfr.#: IKB30N65EH5ATMA1

OMO.#: OMO-IKB30N65EH5ATMA1

IGBT Transistors Infineon s 650 V, 30 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package, redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switc
IKB30N65ES5ATMA1

Mfr.#: IKB30N65ES5ATMA1

OMO.#: OMO-IKB30N65ES5ATMA1-INFINEON-TECHNOLOGIES

INDUSTRY 14
IKB30N65EH5ATMA1

Mfr.#: IKB30N65EH5ATMA1

OMO.#: OMO-IKB30N65EH5ATMA1-INFINEON-TECHNOLOGIES

INDUSTRY 14
可用性
库存:
Available
订购:
1984
输入数量:
IKB30N65ES5ATMA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$3.84
US$3.84
10
US$3.26
US$32.60
100
US$2.83
US$283.00
250
US$2.69
US$672.50
500
US$2.41
US$1 205.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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