SI8802DB-T2-E1

SI8802DB-T2-E1
Mfr. #:
SI8802DB-T2-E1
制造商:
Vishay
描述:
MOSFET N-CH 8V MICROFOOT
生命周期:
制造商新产品。
数据表:
SI8802DB-T2-E1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
SI8802DB-T2-E1 更多信息
产品属性
属性值
制造商
威世硅
产品分类
FET - 单
系列
沟槽FETR
打包
Digi-ReelR 替代包装
安装方式
贴片/贴片
包装盒
4-XFBGA
技术
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
1 Channel
供应商-设备-包
4-Microfoot
配置
单身的
FET型
MOSFET N 沟道,金属氧化物
最大功率
500mW
晶体管型
1 N-Channel
漏源电压 Vdss
8V
输入电容-Ciss-Vds
-
FET-Feature
标准
Current-Continuous-Drain-Id-25°C
-
Rds-On-Max-Id-Vgs
54 mOhm @ 1A, 4.5V
Vgs-th-Max-Id
700mV @ 250μA
栅极电荷-Qg-Vgs
6.5nC @ 4.5V
钯功耗
900 mW
VGS-栅极-源极-电压
5 V
Id 连续漏极电流
3.5 A
Vds-漏-源-击穿电压
8 V
Rds-On-Drain-Source-Resistance
44 mOhms
晶体管极性
N通道
Qg-门电荷
4.3 nC
正向跨导最小值
13 S
Tags
SI8802DB-T, SI8802, SI880, Si88, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 8 V 54 mOhm 4.3 nC Surface Mount Power Mosfet - MICRO FOOT
***et
Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Si88xx 8V TrenchFET® Power MOSFETs
Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chipscale package, in addition to the first n- and p-channel devices to offer on-resistance (RDS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package which occupies up to 36 % less board space than the next smallest chipscale devices, yet offer comparable − and even lower − on resistance (RDS(on)). These Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs can be used for load switching in handheld devices including smart phones, tablets, portable media players, and mobile computing devices. The Si88xx 8V TrenchFET® Power MOSFETs' ultra-thin 0.357 mm profiles saves valuable board space in these applications − enabling smaller, slimmer mobile products.Learn More
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
型号 制造商 描述 库存 价格
SI8802DB-T2-E1
DISTI # V72:2272_09216581
Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant
2974
  • 1000:$0.1511
  • 500:$0.2014
  • 250:$0.2257
  • 100:$0.2508
  • 25:$0.3335
  • 10:$0.3705
  • 1:$0.4750
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1CT-ND
Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
10259In Stock
  • 1000:$0.1695
  • 500:$0.2193
  • 100:$0.2991
  • 10:$0.3990
  • 1:$0.4700
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1DKR-ND
Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
10259In Stock
  • 1000:$0.1695
  • 500:$0.2193
  • 100:$0.2991
  • 10:$0.3990
  • 1:$0.4700
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1TR-ND
Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
9000In Stock
  • 3000:$0.1597
SI8802DB-T2-E1
DISTI # 30155844
Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant
3000
  • 3000:$0.1683
SI8802DB-T2-E1
DISTI # 30883628
Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant
2974
  • 1000:$0.1511
  • 500:$0.2014
  • 250:$0.2257
  • 100:$0.2508
  • 56:$0.3335
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1
Vishay IntertechnologiesTrans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8802DB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.1279
  • 6000:$0.1239
  • 12000:$0.1189
  • 18000:$0.1149
  • 30000:$0.1119
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1
Vishay IntertechnologiesTrans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R (Alt: SI8802DB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI8802DB-T2-E1
    DISTI # 99W9639
    Vishay IntertechnologiesMOSFET, N-CH, 8V, 3.5A, MICRO FOOT-4, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV, RoHS Compliant: Yes0
    • 1:$0.1310
    • 3000:$0.1300
    • 6000:$0.1240
    • 12000:$0.1100
    SI8802DB-T2-E1
    DISTI # 04X9769
    Vishay IntertechnologiesMOSFET, N CHANNEL, 8V, 3.5A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV , RoHS Compliant: Yes0
    • 1:$0.2550
    • 10:$0.2470
    • 100:$0.1950
    • 250:$0.1850
    • 500:$0.1730
    • 1000:$0.1390
    SI8802DB-T2-E1
    DISTI # 781-SI8802DB-T2-E1
    Vishay IntertechnologiesMOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
    RoHS: Compliant
    14450
    • 1:$0.5800
    • 10:$0.3900
    • 100:$0.2640
    • 500:$0.2120
    • 1000:$0.1590
    • 3000:$0.1460
    • 6000:$0.1370
    • 9000:$0.1280
    SI8802DBT2E1Vishay Intertechnologies 
    RoHS: Compliant
    Europe - 3000
      SI8802DB-T2-E1
      DISTI # C1S803601968173
      Vishay IntertechnologiesMOSFETs
      RoHS: Compliant
      2974
      • 250:$0.2257
      • 100:$0.2508
      • 25:$0.3335
      • 10:$0.3705
      SI8802DB-T2-E1Vishay IntertechnologiesMOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
      RoHS: Compliant
      Americas -
        图片 型号 描述
        SI8802DB-T2-E1

        Mfr.#: SI8802DB-T2-E1

        OMO.#: OMO-SI8802DB-T2-E1

        MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
        SI8802DB-T2-E1-CUT TAPE

        Mfr.#: SI8802DB-T2-E1-CUT TAPE

        OMO.#: OMO-SI8802DB-T2-E1-CUT-TAPE-1190

        全新原装
        SI8802DB-T2-E1

        Mfr.#: SI8802DB-T2-E1

        OMO.#: OMO-SI8802DB-T2-E1-VISHAY

        MOSFET N-CH 8V MICROFOOT
        SI8802DB-T2-EY

        Mfr.#: SI8802DB-T2-EY

        OMO.#: OMO-SI8802DB-T2-EY-1190

        全新原装
        SI8802DBT2E1

        Mfr.#: SI8802DBT2E1

        OMO.#: OMO-SI8802DBT2E1-1190

        Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        可用性
        库存:
        Available
        订购:
        4000
        输入数量:
        SI8802DB-T2-E1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$0.17
        US$0.17
        10
        US$0.16
        US$1.60
        100
        US$0.15
        US$15.11
        500
        US$0.14
        US$71.35
        1000
        US$0.13
        US$134.30
        从...开始
        Top