APT64GA90LD30

APT64GA90LD30
Mfr. #:
APT64GA90LD30
制造商:
Microchip / Microsemi
描述:
IGBT Transistors
生命周期:
制造商新产品。
数据表:
APT64GA90LD30 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
美高森美公司
产品分类
IGBT - 单
系列
POWER MOS 8
打包
管子
单位重量
0.373904 oz
安装方式
通孔
商品名
POWER MOS 8
包装盒
TO-264-3, TO-264AA
输入类型
标准
安装型
通孔
供应商-设备-包
TO-264 [L]
配置
单身的
最大功率
500W
反向恢复时间trr
-
电流收集器 Ic-Max
117A
电压收集器发射极击穿最大值
900V
IGBT型
PT
电流收集器脉冲Icm
193A
Vce-on-Max-Vge-Ic
3.1V @ 15V, 38A
开关能源
1192μJ (on), 1088μJ (off)
栅极电荷
162nC
Td-on-off-25°C
18ns/131ns
测试条件
600V, 38A, 4.7 Ohm, 15V
钯功耗
500 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
集电极-发射极-电压-VCEO-Max
900 V
集电极-发射极-饱和-电压
2.5 V
25-C 时的连续集电极电流
117 A
栅极-发射极-漏电流
100 nA
最大栅极发射极电压
30 V
连续集电极电流 Ic-Max
117 A
Tags
APT64, APT6, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 900V 117A 3-Pin(3+Tab) TO-264
***th Star Micro
Insulated Gate Bipolar Transistor - Power MOS 8
***i-Key
IGBT 900V 117A 500W TO-264
***hardson RFPD
POWER IGBT TRANSISTOR
型号 制造商 描述 库存 价格
APT64GA90LD30
DISTI # APT64GA90LD30-ND
Microsemi CorporationIGBT 900V 117A 500W TO-264
RoHS: Compliant
Min Qty: 45
Container: Tube
Temporarily Out of Stock
  • 45:$11.2144
APT64GA90LD30
DISTI # APT64GA90LD30
Microchip Technology IncTrans IGBT Chip N-CH 900V 117A 3-Pin(3+Tab) TO-264 - Rail/Tube (Alt: APT64GA90LD30)
RoHS: Compliant
Min Qty: 45
Container: Tube
Americas - 0
  • 450:$7.0900
  • 225:$7.1900
  • 135:$7.4900
  • 90:$7.6900
  • 45:$7.9900
APT64GA90LD30
DISTI # 494-APT64GA90LD30
Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
RoHS: Compliant
1
  • 1:$12.4500
  • 10:$11.3200
  • 25:$10.4700
  • 50:$9.9000
  • 100:$9.5500
  • 250:$8.7200
  • 500:$8.1700
  • 1000:$7.2800
APT64GA90LD30
DISTI # APT64GA90LD30
Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant
1950
  • 45:$7.5700
  • 100:$7.3700
  • 500:$7.2900
图片 型号 描述
APT64GA90LD30

Mfr.#: APT64GA90LD30

OMO.#: OMO-APT64GA90LD30

IGBT Transistors FG, IGBT-COMBI, 900V, TO-264
APT64GA90B2D30

Mfr.#: APT64GA90B2D30

OMO.#: OMO-APT64GA90B2D30

IGBT Transistors FG, IGBT-COMBI, 900V, TO-247 T-MAX
APT64GA90B

Mfr.#: APT64GA90B

OMO.#: OMO-APT64GA90B

IGBT Transistors FG, IGBT, 900V, TO-247
APT64GA90LD30

Mfr.#: APT64GA90LD30

OMO.#: OMO-APT64GA90LD30-MICROSEMI

IGBT Transistors
可用性
库存:
Available
订购:
3000
输入数量:
APT64GA90LD30的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$10.64
US$10.64
10
US$10.10
US$101.03
100
US$9.57
US$957.15
500
US$9.04
US$4 519.90
1000
US$8.51
US$8 508.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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