CGHV1F025S

Mfr. #:: CGHV1F025S
制造商:: N/A
描述:: RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt
生命周期:: 制造商新产品。
数据表:: CGHV1F025S 数据表
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ECAD Model:
更多信息:: CGHV1F025S 更多信息

产品属性
属性值

制造商：: 天工

产品分类：: 射频 JFET 晶体管

RoHS：: Y

晶体管类型：: pHEMT

技术：: 砷化镓

晶体管极性：: N通道

最低工作温度：: - 40 C

最高工作温度：: + 85 C

安装方式：: 贴片/贴片

包装/案例：: SC-70-4

打包：: 卷轴

品牌：: Skyworks 解决方案公司

NF - 噪声系数：: 0.4 dB

P1dB - 压缩点：: 10.5 dBm

产品类别：: 射频 JFET 晶体管

出厂包装数量：: 3000

子类别：: 晶体管

Tags: CGHV1F, CGHV1, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV1F025S 描述

***i-Key: RF MOSFET HEMT 40V 12DFN

***hardson RFPD: RF POWER TRANSISTOR

CGHV1F025S 更多信息

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

型号	制造商	描述	库存	价格
CGHV1F025S-AMP1 DISTI # CGHV1F025S-AMP1-ND	Wolfspeed	DEMO HEMT TRANS AMP1 CGHV1F025S RoHS: Compliant Min Qty: 1 Container: Bulk	1In Stock	1:$637.4400
CGHV1F025S DISTI # CGHV1F025STR-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$87.4405
CGHV1F025S DISTI # CGHV1F025SCT-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	100:$96.1846 1:$97.9300
CGHV1F025S DISTI # CGHV1F025SDKR-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	100:$96.1846 1:$97.9300
CGHV1F025S DISTI # 941-CGHV1F025S	Cree, Inc.	RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt RoHS: Compliant	0	1:$87.4400
CGHV1F025S-AMP1 DISTI # 941-CGHV1F025S-AMP1	Cree, Inc.	RF Development Tools Test Board with GaN HEMT RoHS: Compliant	1	1:$637.4400

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