BSC026N02KS G

Mfr. #:: BSC026N02KS G
制造商:: Infineon Technologies
描述:: MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
生命周期:: 制造商新产品。
数据表:: BSC026N02KS G 数据表
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更多信息:: BSC026N02KS G 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: FET - 单

系列: 优化MOS

打包: Digi-ReelR 替代包装

部分别名: BSC026N02KSGAUMA1 BSC026N02KSGXT SP000379664

安装方式: 贴片/贴片

商品名: 优化MOS

包装盒: 8-PowerTDFN

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: PG-TDSON-8

配置: 单四漏三源

FET型: MOSFET N 沟道，金属氧化物

最大功率: 78W

晶体管型: 1 N-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 7800pF @ 10V

FET-Feature: Logic Level Gate, 2.5V Drive

Current-Continuous-Drain-Id-25°C: 25A (Ta), 100A (Tc)

Rds-On-Max-Id-Vgs: 2.6 mOhm @ 50A, 4.5V

Vgs-th-Max-Id: 1.2V @ 200μA

栅极电荷-Qg-Vgs: 52.7nC @ 4.5V

钯功耗: 2.8 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 9 ns

上升时间: 115 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 25 A

Vds-漏-源-击穿电压: 20 V

Rds-On-Drain-Source-Resistance: 2.6 mOhms

晶体管极性: N通道

典型关断延迟时间: 52 ns

典型开启延迟时间: 21 ns

通道模式: 增强

Tags: BSC026N02KSG, BSC026N02, BSC026N0, BSC026, BSC02, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC026N02KS G 更多信息

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

型号	制造商	描述	库存	价格
BSC026N02KSGAUMA1 DISTI # V72:2272_06384322	Infineon Technologies AG	Trans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R RoHS: Compliant	4849	3000:$0.5712 1000:$0.6346 500:$0.8121 250:$0.9013 100:$0.9038 25:$1.1116 10:$1.1161 1:$1.2554
BSC026N02KSGAUMA1 DISTI # BSC026N02KSGAUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 20V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8909In Stock	1000:$0.8016 500:$1.0154 100:$1.3094 10:$1.6570 1:$1.8700
BSC026N02KSGAUMA1 DISTI # BSC026N02KSGAUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 20V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8909In Stock	1000:$0.8016 500:$1.0154 100:$1.3094 10:$1.6570 1:$1.8700
BSC026N02KSGAUMA1 DISTI # BSC026N02KSGAUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 20V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.6901
BSC026N02KSGAUMA1 DISTI # 30701482	Infineon Technologies AG	Trans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R RoHS: Compliant	5000	10000:$0.5798 5000:$0.6029
BSC026N02KSGAUMA1 DISTI # 26195427	Infineon Technologies AG	Trans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R RoHS: Compliant	4849	3000:$0.5712 1000:$0.6346 500:$0.8121 250:$0.9013 100:$0.9038 25:$1.1116 11:$1.1161
BSC026N02KSGAUMA1 DISTI # BSC026N02KSGAUMA1	Infineon Technologies AG	Trans MOSFET N-CH 20V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC026N02KSGAUMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.6789 10000:$0.6549 20000:$0.6309 30000:$0.6099 50000:$0.5989
BSC026N02KSGAUMA1 DISTI # SP000379664	Infineon Technologies AG	Trans MOSFET N-CH 20V 25A 8-Pin TDSON T/R (Alt: SP000379664) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€0.9889 10000:€0.7709 20000:€0.6889 30000:€0.6269 50000:€0.5879
BSC026N02KS G DISTI # 726-BSC026N02KSG	Infineon Technologies AG	MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 RoHS: Compliant	7674	1:$1.3700 10:$1.1700 100:$0.8920 500:$0.7880 1000:$0.6220
BSC026N02KSGAUMA1 DISTI # 726-BSC026N02KSGAUMA	Infineon Technologies AG	MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 RoHS: Compliant	2883	1:$1.5500 10:$1.3300 100:$1.0200 500:$0.8970 1000:$0.7080 5000:$0.6280
BSC026N02KSG	Infineon Technologies AG	Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	40500	1000:$0.6300 500:$0.6700 100:$0.6900 25:$0.7200 1:$0.7800
BSC026N02KSGAUMA1 DISTI # 7528154P	Infineon Technologies AG	MOSFET N-CHANNEL 20V 25A OPTIMOS2 TDSON8, RL	3490	50:£0.8500 250:£0.6650 1250:£0.4650 2500:£0.4400
BSC026N02KSGAUMA1 DISTI # C1S322000644539	Infineon Technologies AG	MOSFETs RoHS: Compliant	5000	5000:$0.6400
BSC026N02KSGAUMA1 DISTI # C1S322000653078	Infineon Technologies AG	MOSFETs RoHS: Compliant	4849	250:$0.9013 100:$0.9038 25:$1.1116 10:$1.1161
BSC026N02KSGAUMA1 DISTI # 1775434	Infineon Technologies AG	MOSFET, N CH, 100A, 20V, PG-TDSON-8 RoHS: Compliant	0	1:$2.1700 10:$1.8500 100:$1.4100 500:$1.2500 1000:$0.9840 5000:$0.9840

图片	型号	描述
	Mfr.#: BSC026N04LS OMO.#: OMO-BSC026N04LS	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: BSC026N02KS G OMO.#: OMO-BSC026N02KS-G-1190	MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
	Mfr.#: BSC026N02KSG OMO.#: OMO-BSC026N02KSG-1190	Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC026N02KSGAUMA1 OMO.#: OMO-BSC026N02KSGAUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 20V 100A TDSON-8
	Mfr.#: BSC026N04LS OMO.#: OMO-BSC026N04LS-1190	Trans MOSFET N-CH 40V 23A
	Mfr.#: BSC026N04LSATMA1 OMO.#: OMO-BSC026N04LSATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 23A 8TDSON
	Mfr.#: BSC026N08NS5 OMO.#: OMO-BSC026N08NS5-1190	POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 80V, 0.0026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
	Mfr.#: BSC026NE2LS5ATMA1-CUT TAPE OMO.#: OMO-BSC026NE2LS5ATMA1-CUT-TAPE-1190	全新原装
	Mfr.#: BSC026NE2LS5ATMA1 OMO.#: OMO-BSC026NE2LS5ATMA1-INFINEON-TECHNOLOGIES	MOSFET LV POWER MOS
	Mfr.#: BSC026N08NS5ATMA1 OMO.#: OMO-BSC026N08NS5ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-Ch 80V 100A TDSON-8

BSC026N02KS G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes