FDN357N

Mfr. #:: FDN357N
制造商:: ON Semiconductor
描述:: MOSFET N-CH 30V 1.9A SSOT3
生命周期:: 制造商新产品。
数据表:: FDN357N 数据表
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产品属性
属性值

制造商: 仙童半导体

产品分类: FET - 单

系列: -

打包: Digi-ReelR 替代包装

部分别名: FDN357N_NL

单位重量: 0.001058 oz

安装方式: 贴片/贴片

包装盒: TO-236-3, SC-59, SOT-23-3

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: SuperSOT-3

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 460mW

晶体管型: 1 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 235pF @ 10V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 1.9A (Ta)

Rds-On-Max-Id-Vgs: 60 mOhm @ 2.2A, 10V

Vgs-th-Max-Id: 2V @ 250μA

栅极电荷-Qg-Vgs: 5.9nC @ 5V

钯功耗: 500 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 12 ns

上升时间: 12 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 1.9 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 81 mOhms

晶体管极性: N通道

典型关断延迟时间: 12 ns

典型开启延迟时间: 5 ns

正向跨导最小值: 5 S

通道模式: 增强

Tags: FDN357N, FDN357, FDN35, FDN3, FDN

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDN357N 描述

***Components: In a Pack of 5, N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 ON Semiconductor FDN357N

***Semiconductor: N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.9A, 90mΩ

***ical: Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R

***ure Electronics: N-Channel 30 V 60 mOhm Logic Level Enhancement Mode Field Effect Transistor

***p One Stop Japan: Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R

***ark: 30V N-Fet 60 Mo Ssot3 Rohs Compliant: Yes

*** Source Electronics: MOSFET N-CH 30V 1.9A SSOT3

***trelec: MOSFET Operating temperature: -55...150 °C Marking: 357 Drive: logic level Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 500 mW

***eco: FDN357N,003, PLASTIC MOLDED, S

***ser: MOSFETs SSOT-3 N-CH 30V

***et: 30V N-CH. FET, 60 MO, SSOT3

***nell: MOSFET, N, SOT-23; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:2.5A; Resistance, Rds On:0.08ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.5W; Power, Pd:0.5W; SMD Marking:357; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:30V; Width, External:3.05mm; Width, Tape:8mm

***rchild Semiconductor: SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

***ment14 APAC: MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.9A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:357; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V

Market price

型号	制造商	描述	库存	价格
FDN357N DISTI # V72:2272_06300784	ON Semiconductor	30V N-CH. FET, 60 MO, SSOT3	121	100:$0.1656 25:$0.3474 10:$0.3528 1:$0.4966
FDN357N DISTI # FDN357NCT-ND	ON Semiconductor	MOSFET N-CH 30V 1.9A SSOT3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	25169In Stock	1000:$0.1707 500:$0.2276 100:$0.3319 10:$0.4840 1:$0.6200
FDN357N DISTI # FDN357NDKR-ND	ON Semiconductor	MOSFET N-CH 30V 1.9A SSOT3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	25169In Stock	1000:$0.1707 500:$0.2276 100:$0.3319 10:$0.4840 1:$0.6200
FDN357N DISTI # FDN357NTR-ND	ON Semiconductor	MOSFET N-CH 30V 1.9A SSOT3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	24000In Stock	3000:$0.1519
FDN357N DISTI # 30275702	ON Semiconductor	30V N-CH. FET, 60 MO, SSOT3	121	100:$0.1656 62:$0.3474
FDN357N DISTI # FDN357N	ON Semiconductor	Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN357N) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0849 6000:$0.0839 12000:$0.0829 18000:$0.0819 30000:$0.0799
FDN357N DISTI # FDN357N	ON Semiconductor	Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R (Alt: FDN357N) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0
FDN357N DISTI # FDN357N	ON Semiconductor	Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R (Alt: FDN357N) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.1439 6000:€0.1119 12000:€0.0909 18000:€0.0769 30000:€0.0719
FDN357N DISTI # FDN357N	ON Semiconductor	Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Cut TR (SOS) (Alt: FDN357N) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1:$0.3559 30:$0.3119 75:$0.2199 150:$0.1689 375:$0.1599 750:$0.1579 1500:$0.1579
FDN357N DISTI # 67R2063	ON Semiconductor	Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Tape and Reel (Alt: 67R2063) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	1:$0.1260 12000:$0.1220 18000:$0.1170 30000:$0.1120
FDN357N DISTI # 58K8842	ON Semiconductor	Trans MOSFET N-CH 30V 1.9A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 58K8842) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.5390 25:$0.4080 50:$0.3150 100:$0.2210 250:$0.2020 500:$0.1850 1000:$0.1660
FDN357N DISTI # 58K8842	ON Semiconductor	N CHANNEL MOSFET, 30V, 1.9A, SUPER SOT-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.6V RoHS Compliant: Yes	4802	1:$0.5390 25:$0.4080 50:$0.3150 100:$0.2210 250:$0.2020 500:$0.1850 1000:$0.1660
FDN357N DISTI # 04X6265	ON Semiconductor	MOSFET, N CH, 30V, 1.9A, SUPERSOT,Transistor Polarity:N Channel,Continuous Drain Current Id:1.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes	54000	1:$0.1760 3000:$0.1660 6000:$0.1440 12000:$0.1290 18000:$0.1180 30000:$0.1080
FDN357N	ON Semiconductor	N-Channel 30 V 60 mOhm Logic Level Enhancement Mode Field Effect Transistor RoHS: Compliant	3000Reel	3000:$0.1120 6000:$0.1060 9000:$0.1050
FDN357N	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	416409	1000:$0.1600 100:$0.1700 500:$0.1700 25:$0.1800 1:$0.1900
FDN357N DISTI # 512-FDN357N	ON Semiconductor	MOSFET SSOT-3 N-CH 30V RoHS: Compliant	4010	1:$0.4900 10:$0.3710 100:$0.2010 1000:$0.1510 3000:$0.1300 9000:$0.1220 24000:$0.1120
FDN357N_Q DISTI # 512-FDN357N_Q	ON Semiconductor	MOSFET SSOT-3 N-CH 30V RoHS: Not compliant	0
FDN357N	Fairchild Semiconductor Corporation		1065
FDN357N	Fairchild Semiconductor Corporation		14998
FDN357N	Fairchild Semiconductor Corporation		4198
FDN357N DISTI # 6710441	ON Semiconductor	MOSFET N-CHANNEL 30V 1.9A SUPERSOT3, PK	315	5:£0.5200 25:£0.2620 100:£0.1420 250:£0.1300 500:£0.1200
FDN357N DISTI # 6710441P	ON Semiconductor	MOSFET N-CHANNEL 30V 1.9A SUPERSOT3, RL	1370	25:£0.2620 100:£0.1420 250:£0.1300 500:£0.1200
FDN357N	Fairchild Semiconductor Corporation	1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3005	1264:$0.1232 254:$0.1584 1:$0.3520
FDN357N	ON Semiconductor	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SUPERSOT-3 RoHS: Compliant	Europe - 3000
FDN357N	Fairchild Semiconductor Corporation	INSTOCK	3000
FDN357N		INSTOCK	320
FDN357N DISTI # 2323189	ON Semiconductor	MOSFET, N CH, 30V, 1.9A, SUPERSOT RoHS: Compliant	54000	3000:£0.1110 9000:£0.0954
FDN357N DISTI # 9845364	ON Semiconductor	MOSFET, N, SOT-23 RoHS: Compliant	26214	1:$0.7750 10:$0.5870 100:$0.3190 1000:$0.2400 3000:$0.2060 9000:$0.1940 24000:$0.1780
FDN357N DISTI # 2323189	ON Semiconductor	MOSFET, N CH, 30V, 1.9A, SUPERSOT RoHS: Compliant	66000	3000:$0.2060
FDN357N DISTI # 1562548	ON Semiconductor	MOSFET, N SOT-23 REEL 3K RoHS: Compliant	0	1:$748.6700 3:$741.1000
FDN357N DISTI # 9845364RL	ON Semiconductor	MOSFET, N, SOT-23 RoHS: Compliant	0	1:$0.7750 10:$0.5870 100:$0.3190 1000:$0.2400 3000:$0.2060 9000:$0.1940 24000:$0.1780
FDN357N DISTI # XSFP00000026676	Fairchild Semiconductor Corporation	RoHS: Compliant	16152	3000:$0.1880 16152:$0.1762

图片	型号	描述
	Mfr.#: FDN143 OMO.#: OMO-FDN143-1190	全新原装
	Mfr.#: FDN311N-NL OMO.#: OMO-FDN311N-NL-1190	全新原装
	Mfr.#: FDN335A-NL OMO.#: OMO-FDN335A-NL-1190	全新原装
	Mfr.#: FDN335N_Q OMO.#: OMO-FDN335N-Q-1190	全新原装
	Mfr.#: FDN335P OMO.#: OMO-FDN335P-1190	全新原装
	Mfr.#: FDN338P SOT23-338 OMO.#: OMO-FDN338P-SOT23-338-1190	全新原装
	Mfr.#: FDN339AN-NL , 1N5246B OMO.#: OMO-FDN339AN-NL-1N5246B-1190	全新原装
	Mfr.#: FDN537N OMO.#: OMO-FDN537N-ON-SEMICONDUCTOR	MOSFET N-CH 30V 6.5A SSOT-3
	Mfr.#: FDN6030L-NL OMO.#: OMO-FDN6030L-NL-1190	全新原装
	Mfr.#: FDN336P-CUT TAPE OMO.#: OMO-FDN336P-CUT-TAPE-1190	全新原装

FDN357N

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes