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IGW40N65F5FKSA1

IGW40N65F5FKSA1
Mfr. #:
IGW40N65F5FKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命周期:
制造商新产品。
数据表:
IGW40N65F5FKSA1 数据表
交货:
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更多信息:
IGW40N65F5FKSA1 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
IGBT - 单
系列
战壕止损
打包
管子
部分别名
IGW40N65F5 SP000973424
单位重量
1.340411 oz
安装方式
通孔
包装盒
TO-247-3
输入类型
标准
安装型
通孔
供应商-设备-包
PG-TO247-3
配置
单身的
最大功率
255W
反向恢复时间trr
-
电流收集器 Ic-Max
74A
电压收集器发射极击穿最大值
650V
IGBT型
-
电流收集器脉冲Icm
120A
Vce-on-Max-Vge-Ic
2.1V @ 15V, 40A
开关能源
360μJ (on), 100μJ (off)
栅极电荷
95nC
Td-on-off-25°C
19ns/160ns
测试条件
400V, 20A, 15 Ohm, 15V
钯功耗
255 W
最高工作温度
+ 175 C
最低工作温度
- 40 C
集电极-发射极-电压-VCEO-Max
650 V
集电极-发射极-饱和-电压
1.6 V
25-C 时的连续集电极电流
74 A
栅极-发射极-漏电流
100 nA
最大栅极发射极电压
20 V
连续集电极电流 Ic-Max
46 A
Tags
IGW40N65F, IGW40N65, IGW40N6, IGW40N, IGW40, IGW4, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IGW40N65F5FKSA1 IGBT, 40 A 650 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 74A 250000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 74A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube
***ure Electronics
650V, 74A IGBT TO247-3 Package
***i-Key
IGBT 650V 74A 255W PG-TO247-3
***ronik
IGBT 650V 40A 1.65V TO247-3
***ark
IGBT, 650V, 40A, TO247-3
***ukat
650V 74A 255W TO247
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 40A, TO247-3; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:255W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT
***nell
IGBT, 650V, 40A, TO247-3; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:255W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
型号 制造商 描述 库存 价格
IGW40N65F5FKSA1
DISTI # V99:2348_06377719		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 500:$1.8880
  • 250:$2.0960
  • 100:$2.1730
  • 10:$2.5520
  • 1:$3.2956
IGW40N65F5FKSA1
DISTI # V36:1790_06377719		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5FKSA1-ND    		Infineon Technologies AGIGBT 650V 74A 255W PG-TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		230In Stock
    • 2640:$1.9424
    • 720:$2.4182
    • 240:$2.8407
    • 25:$3.2776
    • 10:$3.4670
    • 1:$3.8600
    IGW40N65F5FKSA1
    DISTI # 32372445    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		240
    • 500:$1.8880
    • 250:$2.0960
    • 100:$2.1730
    • 10:$2.5520
    • 4:$2.9960
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube - Bulk (Alt: IGW40N65F5FKSA1)
    RoHS: Compliant
    Min Qty: 209
    Container: Bulk    		Americas - 0
    • 1045:$1.4900
    • 2090:$1.4900
    • 418:$1.5900
    • 627:$1.5900
    • 209:$1.6900
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW40N65F5FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 1440:$1.6900
    • 2400:$1.6900
    • 960:$1.7900
    • 240:$1.8900
    • 480:$1.8900
    IGW40N65F5FKSA1
    DISTI # SP000973424    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube (Alt: SP000973424)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€1.3900
    • 500:€1.4900
    • 50:€1.5900
    • 100:€1.5900
    • 25:€1.6900
    • 10:€1.7900
    • 1:€1.8900
    IGW40N65F5FKSA1
    DISTI # 33X0399    		Infineon Technologies AGIGBT Single Transistor, 40 A, 1.6 V, 255 W, 650 V, TO-247, 3 RoHS Compliant: Yes0
    • 500:$1.9100
    • 250:$2.1200
    • 100:$2.2400
    • 50:$2.3600
    • 25:$2.4700
    • 10:$2.5900
    • 1:$3.0400
    IGW40N65F5FKSA1
    DISTI # 726-IGW40N65F5FKSA1    		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
    RoHS: Compliant    		461
    • 1:$3.6700
    • 10:$3.1200
    • 100:$2.7000
    • 250:$2.5600
    • 500:$2.3000
    • 1000:$1.9900
    IGW40N65F5
    DISTI # 726-IGW40N65F5-ES    		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
    RoHS: Compliant    		234
    • 1:$3.0100
    • 10:$2.5600
    • 100:$2.2200
    • 250:$2.1000
    • 500:$1.8900
    IGW40N65F5FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel
    RoHS: Compliant    		25
    • 1000:$1.5800
    • 500:$1.6600
    • 100:$1.7300
    • 25:$1.8100
    • 1:$1.9400
    IGW40N65F5FKSA1
    DISTI # 1107425P    		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 650V 40A TO247, TU356
    • 200:£1.6680
    • 80:£1.7300
    • 40:£1.8700
    • 12:£2.0980
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5FKSA1    		Infineon Technologies AGTransistor: IGBT,650V,74A,250W,TO247-3,Series: F516
    • 1:$3.5300
    • 3:$3.0600
    • 10:$2.4500
    • 30:$2.2000
    IGW40N65F5FKSA1
    DISTI # 2363277    		Infineon Technologies AGIGBT, 650V, 40A, TO247-3467
    • 500:£1.3800
    • 250:£1.5400
    • 100:£1.6200
    • 10:£1.8800
    • 1:£2.6200
    IGW40N65F5FKSA1
    DISTI # IGW40N65F5    		Infineon Technologies AG650V 74A 255W TO247
    RoHS: Compliant    		485
    • 1:€5.4700
    • 10:€2.4700
    • 50:€1.4700
    • 100:€1.4100
    图片 型号 描述
    IGW40N60TPXKSA1

    Mfr.#: IGW40N60TPXKSA1

    OMO.#: OMO-IGW40N60TPXKSA1

    		 IGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off ener
    IGW40N65F5

    Mfr.#: IGW40N65F5

    OMO.#: OMO-IGW40N65F5

    		 IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
    IGW40N65H5

    Mfr.#: IGW40N65H5

    OMO.#: OMO-IGW40N65H5

    		 IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
    IGW40N65F5AXKSA1

    Mfr.#: IGW40N65F5AXKSA1

    OMO.#: OMO-IGW40N65F5AXKSA1

    		 IGBT Transistors IGBT PRODUCTS
    IGW40N60A

    Mfr.#: IGW40N60A

    OMO.#: OMO-IGW40N60A-1190

    		 全新原装
    IGW40N60N

    Mfr.#: IGW40N60N

    OMO.#: OMO-IGW40N60N-1190

    		 全新原装
    IGW40N60TP

    Mfr.#: IGW40N60TP

    OMO.#: OMO-IGW40N60TP-1190

    		 - Bulk (Alt: IGW40N60TP)
    IGW40N65F5

    Mfr.#: IGW40N65F5

    OMO.#: OMO-IGW40N65F5-1190

    		 - Bulk (Alt: IGW40N65F5)
    IGW40N65F5A

    Mfr.#: IGW40N65F5A

    OMO.#: OMO-IGW40N65F5A-1190

    		 全新原装
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    Mfr.#: IGW40N65H5A

    OMO.#: OMO-IGW40N65H5A-1190

    		 全新原装
    可用性
    库存:
    Available
    订购:
    1500
    输入数量:
    IGW40N65F5FKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$2.24
    US$2.24
    10
    US$2.12
    US$21.23
    100
    US$2.01
    US$201.15
    500
    US$1.90
    US$949.90
    1000
    US$1.79
    US$1 788.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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