FDMD85100

Mfr. #:: FDMD85100
制造商:: ON Semiconductor
描述:: IGBT Transistors MOSFET 100V Dual N-Channel PowerTrench MOSFET
生命周期:: 制造商新产品。
数据表:: FDMD85100 数据表
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ECAD Model:
更多信息:: FDMD85100 更多信息

产品属性
属性值

制造商: 仙童半导体

产品分类: FET - 阵列

系列: 动力战壕

打包: Digi-ReelR 替代包装

单位重量: 0.008818 oz

安装方式: 贴片/贴片

包装盒: 8-PowerWDFN

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 8-Power 5x6

配置: 双重的

FET型: 2 N-Channel (Half Bridge)

最大功率: 2.2W

晶体管型: 2 N-Channel

漏源电压 Vdss: 100V

输入电容-Ciss-Vds: 2230pF @ 50V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 10.4A

Rds-On-Max-Id-Vgs: 9.9 mOhm @ 10.4A, 10V

Vgs-th-Max-Id: 4V @ 250μA

栅极电荷-Qg-Vgs: 31nC @ 10V

钯功耗: 50 W 50 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 4.2 ns 4.4 ns

上升时间: 5 ns 5.6 ns

VGS-栅极-源极-电压: 20 V 20 V

Id 连续漏极电流: 48 A 48 A

Vds-漏-源-击穿电压: 100 V 100 V

VGS-th-Gate-Source-Threshold-Voltage: 2 V 2V

Rds-On-Drain-Source-Resistance: 18.7 mOhms 18.6 mOhms

晶体管极性: N通道

典型关断延迟时间: 19 ns 18 ns

典型开启延迟时间: 14 ns 12.5 ns

Qg-门电荷: 22 nC 21 nC

正向跨导最小值: 27 S 26 S

通道模式: 增强

Tags: FDMD85, FDMD, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMD85100 描述

***et Japan: Transistor MOSFET Array Dual N-CH 100V 48A 8-Pin PQFN T/R

***emi: Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ

***ark: 100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, SYMMETRICAL HAL

***rchild Semiconductor: This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

FDMD85100 更多信息

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

型号	制造商	描述	库存	价格
FDMD85100 DISTI # V72:2272_06337942	ON Semiconductor	100V DUAL N-CHANNEL POWERTRENC	2898	1000:$1.4840 500:$1.7360 250:$1.9310 100:$2.0230 25:$2.3150 10:$2.3170 1:$2.7030
FDMD85100 DISTI # FDMD85100CT-ND	ON Semiconductor	MOSFET 2N-CH 100V RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5182In Stock	1000:$1.6904 500:$2.0043 100:$2.4752 10:$3.0190 1:$3.3800
FDMD85100 DISTI # FDMD85100DKR-ND	ON Semiconductor	MOSFET 2N-CH 100V RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5182In Stock	1000:$1.6904 500:$2.0043 100:$2.4752 10:$3.0190 1:$3.3800
FDMD85100 DISTI # FDMD85100TR-ND	ON Semiconductor	MOSFET 2N-CH 100V RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$1.5591
FDMD85100 DISTI # 27527757	ON Semiconductor	100V DUAL N-CHANNEL POWERTRENC	9000	3000:$1.5590
FDMD85100 DISTI # 25975390	ON Semiconductor	100V DUAL N-CHANNEL POWERTRENC	2898	1000:$1.4840 500:$1.7360 250:$1.9310 100:$2.0230 25:$2.3150 10:$2.3170 5:$2.7030
FDMD85100 DISTI # FDMD85100	ON Semiconductor	Trans MOSFET N-CH 100V 10.4A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD85100) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.2900 6000:$1.2900 12000:$1.2900 18000:$1.2900 30000:$1.2900
FDMD85100 DISTI # FDMD85100	ON Semiconductor	Trans MOSFET N-CH 100V 10.4A 8-Pin PQFN T/R (Alt: FDMD85100) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€2.2900 6000:€1.7900 12000:€1.5900 18000:€1.3900 30000:€1.3900
FDMD85100 DISTI # 512-FDMD85100	ON Semiconductor	MOSFET FET 100V 9.9 MOHM PQFN56 RoHS: Compliant	2807	1:$2.8300 10:$2.4000 100:$2.0800 250:$1.9800 500:$1.7700 1000:$1.5000
FDMD85100	Fairchild Semiconductor Corporation	Power Field-Effect Transistor RoHS: Compliant	2101	1000:$1.5500 500:$1.6300 100:$1.7000 25:$1.7700 1:$1.9100
FDMD85100 DISTI # C1S541901391436	ON Semiconductor	Trans MOSFET N-CH 100V 10.4A 8-Pin PQFN EP T/R RoHS: Compliant	2898	250:$1.9310 100:$2.0230 25:$2.3150 10:$2.3170 1:$2.7030

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