IPP90R1K0C3

Mfr. #:: IPP90R1K0C3
制造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET N-Ch 900V 5.7A TO220-3 CoolMOS C3
生命周期:: 制造商新产品。
数据表:: IPP90R1K0C3 数据表
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产品属性
属性值

制造商: 英飞凌

产品分类: FET - 单

系列: CoolMOS C3

打包: 管子

部分别名: IPP90R1K0C3XK IPP90R1K0C3XKSA1 SP000683094

单位重量: 0.211644 oz

安装方式: 通孔

商品名: 酷摩

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 89 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 35 ns

上升时间: 20 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 5.7 A

Vds-漏-源-击穿电压: 900 V

Rds-On-Drain-Source-Resistance: 1 Ohms

晶体管极性: N通道

典型关断延迟时间: 400 ns

典型开启延迟时间: 70 ns

通道模式: 增强

Tags: IPP90R1K0, IPP90R1, IPP90R, IPP9, IPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP90R1K0C3 描述

***ical: Trans MOSFET N-CH 900V 5.7A 3-Pin(3+Tab) TO-220 Tube

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:5.7A; Package / Case:TO-220; Power Dissipation Pd:89W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: 900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

Market price

型号	制造商	描述	库存	价格
IPP90R1K0C3XKSA1 DISTI # IPP90R1K0C3XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 900V 5.7A TO-220 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call	500:$1.2170
IPP90R1K0C3XK DISTI # IPP90R1K0C3XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 900V 5.7A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP90R1K0C3XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$0.9099 1000:$0.8779 2000:$0.8459 3000:$0.8169 5000:$0.8029
IPP90R1K0C3 DISTI # 726-IPP90R1K0C3	Infineon Technologies AG	MOSFET N-Ch 900V 5.7A TO220-3 CoolMOS C3 RoHS: Compliant	8	1:$1.8600 10:$1.5900 100:$1.2700 500:$1.1100
IPP90R1K0C3XKSA1 DISTI # IPP90R1K0C3XKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,900V,3.6A,89W,PG-TO220-3	500	1:$1.6500 3:$1.4100 10:$1.1400 100:$0.9900

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