IPW65R110CFDAFKSA1

Mfr. #:: IPW65R110CFDAFKSA1
制造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET N-Ch 650V 31.2A TO247-3
生命周期:: 制造商新产品。
数据表:: IPW65R110CFDAFKSA1 数据表
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更多信息:: IPW65R110CFDAFKSA1 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: IPW65R110

打包: 管子

部分别名: IPW65R110CFDA IPW65R110CFDAXK SP000895236

单位重量: 1.340411 oz

商品名: 酷摩

包装盒: TO-247-3

技术: 硅

通道数: 1 Channel

晶体管型: 1 N-Channel

Id 连续漏极电流: 31.2 A

Vds-漏-源-击穿电压: 650 V

Rds-On-Drain-Source-Resistance: 110 mOhms

晶体管极性: N通道

Tags: IPW65R110CFDA, IPW65R11, IPW65R1, IPW65R, IPW65, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW65R110CFDAFKSA1 描述

***ark: Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Svhc:no Svhc (12-Jan-2017) Rohs Compliant: Yes

***et Europe: Trans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube

***ical: Trans MOSFET N-CH 650V 31.2A

***i-Key: MOSFET N-CH 650V 31.2A TO247

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, AEC-Q101, 650V, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFDA Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, AEC-Q101 650V TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFDA Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: 650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting

IPW65R110CFDAFKSA1 更多信息

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

型号	制造商	描述	库存	价格
IPW65R110CFDAFKSA1 DISTI # IPW65R110CFDAFKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 31.2A TO247 RoHS: Compliant Min Qty: 1 Container: Tube	219In Stock	720:$5.6983 240:$6.6906 10:$8.0130 1:$8.8400
IPW65R110CFDAFKSA1 DISTI # SP000895236	Infineon Technologies AG	Trans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube (Alt: SP000895236) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 48	1:€4.4900 10:€4.0900 25:€3.9900 50:€3.7900 100:€3.6900 500:€3.4900 1000:€3.2900
IPW65R110CFDAFKSA1 DISTI # IPW65R110CFDAFKSA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R110CFDAFKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	240:$4.2900 480:$4.0900 960:$3.9900 1440:$3.7900 2400:$3.7900
IPW65R110CFDAFKSA1 DISTI # IPW65R110CFDA	Infineon Technologies AG	Trans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube (Alt: IPW65R110CFDA) RoHS: Compliant Min Qty: 240 Container: Tube	Asia - 0
IPW65R110CFDAFKSA1 DISTI # 13AC9100	Infineon Technologies AG	MOSFET, N-CH, AEC-Q101, 650V, TO-247-3,SVHC:No SVHC (12-Jan-2017) RoHS Compliant: Yes	15	100:$5.3600 50:$5.7700 25:$6.1700 10:$6.4700 1:$7.1600
IPW65R110CFDAFKSA1 DISTI # 726-IPW65R110CFDAFKS	Infineon Technologies AG	MOSFET N-Ch 650V 31.2A TO247-3 RoHS: Compliant	348	1:$7.1600 10:$6.4700 25:$6.1700 100:$5.3600
IPW65R110CFDA DISTI # 726-IPW65R110CFDA	Infineon Technologies AG	MOSFET N-Ch 650V 31.2A TO247-3 RoHS: Compliant	263	1:$7.1600 10:$6.4700 25:$6.1700 100:$5.3600
IPW65R110CFDAFKSA1 DISTI # 2726081	Infineon Technologies AG	MOSFET, N-CH, AEC-Q101, 650V, TO-247-3 RoHS: Compliant	15	720:$8.1800 240:$9.7600 10:$11.8700 1:$13.1800
IPW65R110CFDAFKSA1 DISTI # XSKDRABV0042852	Infineon Technologies AG	RoHS: Compliant	192	192:$5.3600 87:$5.7400
IPW65R110CFDAFKSA1 DISTI # 2726081	Infineon Technologies AG	MOSFET, N-CH, AEC-Q101, 650V, TO-247-3 RoHS: Compliant	15	100:£4.1000 50:£4.4100 10:£4.7100 5:£5.4700 1:£6.0000

图片	型号	描述
	Mfr.#: IPW65R110CFD OMO.#: OMO-IPW65R110CFD	MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
	Mfr.#: IPW65R110CFDFKSA1 OMO.#: OMO-IPW65R110CFDFKSA1	MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
	Mfr.#: IPW65R110CFDAFKSA1 OMO.#: OMO-IPW65R110CFDAFKSA1	MOSFET N-Ch 650V 31.2A TO247-3
	Mfr.#: IPW65R110CFDFKSA2 OMO.#: OMO-IPW65R110CFDFKSA2	MOSFET
	Mfr.#: IPW65R110CFDFKSA2 OMO.#: OMO-IPW65R110CFDFKSA2-INFINEON-TECHNOLOGIES	HIGH POWER_LEGACY
	Mfr.#: IPW65R110CFD , 2SJ288 OMO.#: OMO-IPW65R110CFD-2SJ288-1190	全新原装
	Mfr.#: IPW65R110CFD 65F6110 OMO.#: OMO-IPW65R110CFD-65F6110-1190	全新原装
	Mfr.#: IPW65R110CFDA , 2SJ289 OMO.#: OMO-IPW65R110CFDA-2SJ289-1190	全新原装
	Mfr.#: IPW65R110CFDFKSA1 OMO.#: OMO-IPW65R110CFDFKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 31.2A TO247
	Mfr.#: IPW65R110CFDAFKSA1 OMO.#: OMO-IPW65R110CFDAFKSA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 650V 31.2A TO247-3

IPW65R110CFDAFKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes