BSC105N10LSF G

Mfr. #:: BSC105N10LSF G
制造商:: Infineon Technologies
描述:: MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
生命周期:: 制造商新产品。
数据表:: BSC105N10LSF G 数据表
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ECAD Model:

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: OptiMOS 2

打包: 卷轴

部分别名: BSC105N10LSFGATMA1 BSC105N10LSFGXT SP000388502

安装方式: 贴片/贴片

商品名: 优化MOS

包装盒: TDSON-8

技术: 硅

通道数: 1 Channel

配置: 单四漏三源

晶体管型: 1 N-Channel

钯功耗: 156 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 8 ns

上升时间: 26 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 90 A

Vds-漏-源-击穿电压: 100 V

Rds-On-Drain-Source-Resistance: 10.5 mOhms

晶体管极性: N通道

典型关断延迟时间: 37 ns

典型开启延迟时间: 15 ns

通道模式: 增强

Tags: BSC105N10LSF, BSC105, BSC10, BSC1, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型号	制造商	描述	库存	价格
BSC105N10LSFGATMA1 DISTI # BSC105N10LSFGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3275In Stock	1000:$1.7776 500:$2.1078 100:$2.6030 10:$3.1740 1:$3.5600
BSC105N10LSFGATMA1 DISTI # BSC105N10LSFGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3275In Stock	1000:$1.7776 500:$2.1078 100:$2.6030 10:$3.1740 1:$3.5600
BSC105N10LSFGATMA1 DISTI # BSC105N10LSFGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.5779
BSC105N10LSFGATMA1 DISTI # BSC105N10LSFGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC105N10LSFGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.5900 10000:$1.4900 20000:$1.4900 30000:$1.3900 50000:$1.3900
BSC105N10LSFGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 11.4A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	3850	1000:$1.3000 500:$1.3700 100:$1.4300 25:$1.4900 1:$1.6000
BSC105N10LSF G DISTI # 726-BSC105N10LSFG	Infineon Technologies AG	MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 RoHS: Compliant	2387	1:$2.9700 10:$2.5300 100:$2.1900 250:$2.0800 500:$1.8700

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