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ARF461AG

ARF461AG
Mfr. #:
ARF461AG
制造商:
Microchip / Microsemi
描述:
RF MOSFET Transistors FG, MOSFET, 1000V, TO-247, ROHS
生命周期:
制造商新产品。
数据表:
ARF461AG 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
ARF461AG DatasheetARF461AG Datasheet (P4)
ECAD Model:
产品属性
属性值
制造商：
微芯片
产品分类：
射频 MOSFET 晶体管
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-247-3
打包：
管子
类型：
射频功率MOSFET
品牌：
微芯片/Microsemi
产品类别：
射频 MOSFET 晶体管
出厂包装数量：
1
子类别：
MOSFET
单位重量：
1.340411 oz
Tags
ARF461, ARF46, ARF4, ARF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
ARF461A Series N-Channel 150 W 65 MHz Flange Mount RF Power Mosfet - TO-247-3
***rochip
RF MOSFET (VDMOS) 1000 V 150 W 65 MHz TO-247 Common Source
***ical
Trans RF MOSFET N-CH 1000V 6.5A 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-CHANNEL 1000V - 1.1 Ohm - 8.3A TO-247 Zener-Protected SuperMESH™ PowerMOSFET
***ure Electronics
N-Channel 1 kV 1.38 Ohm Flange Mount SuperMESH™ MOSFET - TO-247
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:8.3A; On Resistance Rds(On):1.38Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Msl:- Rohs Compliant: Yes
***roFlash
Power Field-Effect Transistor, 8.3A I(D), 1000V, 1.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***th Star Micro
Transistor MOSFET N-CH 1.5KV 8A 3-Pin (3+Tab) TO-247 Tube
***ark
N CHANNEL POWER MOSFET, PowerMESH, 1500v, 8A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:1.5kV; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:320W; MSL:- RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 8A I(D), 1500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 950 V, 0.65 Ohm typ., 8 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-247 package
***ure Electronics
Single N-Channel 950 V 130 W 22 nC Silicon Through Hole Mosfet - TO-247-3
***ark
MOSFET, N-CH, 950V, 8A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:950V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Qualification:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 8A I(D), 950V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, QFET®, 1000 V, 8.0 A, 1.45 Ω, TO-247
***nell
MOSFET, N-CH, 1KV, 8A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Di
***r Electronics
Power Field-Effect Transistor, 8A I(D), 1000V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ure Electronics
Single N-Channel 900 V 0.8 Ohm 42 nC CoolMOS™ Power Mosfet - TO-247-3
*** Stop Electro
Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.9A; Package / Case:TO-247; Power Dissipation Pd:104W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
***ark
Mosfet Transistor, N Channel, 5.7 A, 900 V, 1 Ohm, 10 V, 3 V Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 5.7A I(D), 900V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
***nell
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.7A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd:
***ineon
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
型号 制造商 描述 库存 价格
ARF461AG
DISTI # 20757936		Microsemi CorporationTrans RF MOSFET N-CH 1000V 6.5A 3-Pin(3+Tab) TO-247
RoHS: Compliant		221
  • 2:$49.0000
ARF461AG
DISTI # 25229858		Microsemi CorporationTrans RF MOSFET N-CH 1000V 6.5A 3-Pin(3+Tab) TO-247
RoHS: Compliant		100
  • 2:$49.0000
ARF461AG
DISTI # ARF461AG-ND		Microsemi CorporationRF MOSFET N-CH 1000V TO247
RoHS: Compliant
Min Qty: 1
Container: Bulk		21In Stock
  • 250:$33.8579
  • 100:$36.2763
  • 25:$38.6948
  • 10:$41.7180
  • 1:$44.7400
ARF461AG
DISTI # 494-ARF461AG		Microsemi CorporationRF MOSFET Transistors RF MOSFET (VDMOS)
RoHS: Compliant		30
  • 1:$43.8600
  • 2:$42.6700
  • 5:$41.4900
  • 10:$40.3000
  • 25:$37.4600
  • 50:$36.5400
  • 100:$34.9200
  • 250:$31.9100
图片 型号 描述
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760390012

Mfr.#: 760390012

OMO.#: OMO-760390012-WURTH-ELECTRONICS

 TRANSFORMER 475UH SMD
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Mfr.#: SN74HC165PW

OMO.#: OMO-SN74HC165PW-TEXAS-INSTRUMENTS

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416131160808

Mfr.#: 416131160808

OMO.#: OMO-416131160808-WURTH-ELECTRONICS

 SWITCH SLIDE DIP SPST 25MA 24V
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 LDO Voltage Regulators LDO
可用性
库存:
15
订购:
1998
输入数量:
ARF461AG的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$43.86
US$43.86
2
US$42.67
US$85.34
5
US$41.49
US$207.45
10
US$40.30
US$403.00
25
US$37.46
US$936.50
50
US$36.54
US$1 827.00
100
US$34.92
US$3 492.00
250
US$31.91
US$7 977.50
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