IRL6372PBF

IRL6372PBF
Mfr. #:
IRL6372PBF
制造商:
Infineon / IR
描述:
MOSFET 30V DUAL N-CH LO LOGIC LEVEL
生命周期:
制造商新产品。
数据表:
IRL6372PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
SO-8
通道数:
2 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
30 V
Id - 连续漏极电流:
8.1 A
Rds On - 漏源电阻:
17.9 mOhms
Vgs - 栅源电压:
12 V
Qg - 门电荷:
11 nC
Pd - 功耗:
2 W
配置:
双重的
打包:
管子
高度:
1.75 mm
长度:
4.9 mm
晶体管类型:
2 N-Channel
宽度:
3.9 mm
品牌:
英飞凌/红外
产品类别:
MOSFET
出厂包装数量:
95
子类别:
MOSFET
第 # 部分别名:
SP001568406
单位重量:
0.019048 oz
Tags
IRL637, IRL63, IRL6, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 2.0 W 11 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***ernational Rectifier
30V Dual N-Channel Low Logic Level HEXFET Power MOSFET in a SO-8 Lead-Free package
***et
Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC Tube
***ied Electronics & Automation
MOSFET Dual N-Ch 30V 8.1A HEXFET SOIC8
***ineon
Benefits: RoHS Compliant; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N-Channel MOSFET | Target Applications: Battery Protection
***nell
MOSFET,NN CH,W DIODE,30V,8.1A,SO8; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:8.1A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.014ohm; Power Dissipation Pd:2W
型号 制造商 描述 库存 价格
IRL6372PBF
DISTI # IRL6372PBF-ND
Infineon Technologies AGMOSFET 2N-CH 30V 8.1A 8SO
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IRL6372PBF
    DISTI # 942-IRL6372PBF
    Infineon Technologies AGMOSFET 30V DUAL N-CH LO LOGIC LEVEL
    RoHS: Compliant
    0
      IRL6372TRPBF
      DISTI # IRL6372PBF-GURT
      Infineon Technologies AG2xN-LogL 30V 8,1A 2,0W 0,0179R SO8
      RoHS: Compliant
      0
      • 50:€0.2625
      • 100:€0.2225
      • 500:€0.2025
      • 2000:€0.1950
      IRL6372PBF
      DISTI # 1888167
      Infineon Technologies AGMOSFET,NN CH,W DIODE,30V,8.1A,SO8
      RoHS: Compliant
      0
      • 1:$1.3700
      • 10:$1.2000
      • 100:$0.9170
      • 500:$0.7250
      • 1000:$0.5800
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      IRL6353CRTZ

      Mfr.#: IRL6353CRTZ

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      IRL6372PBF

      Mfr.#: IRL6372PBF

      OMO.#: OMO-IRL6372PBF-INFINEON-TECHNOLOGIES

      MOSFET 2N-CH 30V 8.1A 8SO
      可用性
      库存:
      Available
      订购:
      1500
      输入数量:
      IRL6372PBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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