SI7106DN-T1-E3

Mfr. #:: SI7106DN-T1-E3
制造商:: Vishay
描述:: MOSFET N-CH 20V 12.5A 1212-8
生命周期:: 制造商新产品。
数据表:: SI7106DN-T1-E3 数据表
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产品属性
属性值

制造商: 威世硅

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI7106DN-E3

安装方式: 贴片/贴片

商品名: TrenchFET/PowerPAK

包装盒: PowerPAKR 1212-8

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: PowerPAKR 1212-8

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 1.5W

晶体管型: 1 N-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: -

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 12.5A (Ta)

Rds-On-Max-Id-Vgs: 6.2 mOhm @ 19.5A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

栅极电荷-Qg-Vgs: 27nC @ 4.5V

钯功耗: 1.5 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 15 ns

上升时间: 15 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 12.5 A

Vds-漏-源-击穿电压: 20 V

Rds-On-Drain-Source-Resistance: 6.2 mOhms

晶体管极性: N通道

典型关断延迟时间: 50 ns

典型开启延迟时间: 25 ns

通道模式: 增强

Tags: SI7106DN-T1, SI7106DN-T, SI7106D, SI7106, SI710, SI71, SI7

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7106DN-T1-E3 描述

***ied Electronics & Automation: SI7106DN-T1-E3 N-channel MOSFET Transistor; 12.5 A; 20 V; 8-Pin PowerPAK 1212

***ure Electronics: Single N-Channel 20 V 6.2 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8

***et Europe: Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R

***Components: MOSFET N-Ch 20V 12.5A PowerPAK 1212

***nell: N CH MOSFET, 20V, 19.5A, POWERPAK

***i-Key: MOSFET N-CH 20V 12.5A 1212-8

***ser: N-Channel MOSFETs 20V 19.5A 0.0062Ohm

***: 20V, 6.2 [email protected]

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:19500mA; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.0098ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

***ment14 APAC: N CH MOSFET, 20V, 19.5A, POWERPAK; Trans; N CH MOSFET, 20V, 19.5A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):9.8mohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs Typ:1.5V

Market price

型号	制造商	描述	库存	价格
SI7106DN-T1-E3 DISTI # V72:2272_09215605	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	1057	1000:$0.5701 500:$0.7207 250:$0.8720 100:$0.8753 25:$1.0357 10:$1.0408 1:$1.1330
SI7106DN-T1-E3 DISTI # SI7106DN-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 12.5A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	38678In Stock	1000:$0.6326 500:$0.8012 100:$1.0332 10:$1.3070 1:$1.4800
SI7106DN-T1-E3 DISTI # SI7106DN-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 12.5A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	38678In Stock	1000:$0.6326 500:$0.8012 100:$1.0332 10:$1.3070 1:$1.4800
SI7106DN-T1-E3 DISTI # SI7106DN-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 12.5A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	33000In Stock	3000:$0.5732
SI7106DN-T1-E3 DISTI # 25789861	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	1057	1000:$0.5701 500:$0.7207 250:$0.8720 100:$0.8753 25:$1.0357 15:$1.0408
SI7106DN-T1-E3 DISTI # SI7106DN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R (Alt: SI7106DN-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 6000	3000:€1.6059 6000:€1.1249 12000:€0.9279 18000:€0.8239 30000:€0.7789
SI7106DN-T1-E3 DISTI # SI7106DN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7106DN-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4849 6000:$0.4709 12000:$0.4519 18000:$0.4389 30000:$0.4269
SI7106DN-T1-E3 DISTI # 51K6978	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 19.5A, POWERPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:19.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):9.8mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.5V , RoHS Compliant: Yes	0	1:$1.9000 25:$1.5800 50:$1.4100 100:$1.2300 250:$1.1500 500:$1.0700 1000:$1.0300
SI7106DN-T1-E3 DISTI # 70026262	Vishay Siliconix	SI7106DN-T1-E3 N-channel MOSFET Transistor,12.5 A,20 V,8-Pin PowerPAK 1212 RoHS: Compliant	0	3000:$1.1400 6000:$1.0900 9000:$1.0100
SI7106DN-T1-E3 DISTI # 781-SI7106DN-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	6466	1:$1.9000 10:$1.5800 100:$1.2300 500:$1.0700 1000:$1.0400 3000:$1.0200
SI7106DN-T1-E3	Vishay Intertechnologies	Single N-Channel 20 V 6.2 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8 RoHS: Compliant	3000Reel	3000:$0.6850
SI7106DN-T1-E3	Vishay BLH		2965	5:$1.1250 19:$0.7313 70:$0.4219 239:$0.3600 515:$0.3150 1224:$0.2925
SI7106DN-T1-E3	Vishay Intertechnologies	MOSFET Transistor, N-Channel, LLCC	3	1:$1.3540
SI7106DN-T1-E3	Vishay Intertechnologies	MOSFET Transistor, N-Channel, LLCC	2372	2052:$0.3750 445:$0.3900 1:$1.5000
SI7106DN-T1-E3	Vishay Intertechnologies	MOSFET Transistor, N-Channel, LLCC	3513	780:$1.1663 418:$1.2829 1:$3.1100
SI7106DNT1E3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI7106DN-T1-E3	Vishay Intertechnologies	INSTOCK	1991
SI7106DN-T1-E3 DISTI # 1837425	Vishay Intertechnologies	N CH MOSFET, 20V, 19.5A, POWERPAK RoHS: Compliant	0	1:$2.3500 10:$2.0700 100:$1.6400 500:$1.2700 1000:$1.2400
SI7106DN-T1-E3 DISTI # 1837425	Vishay Intertechnologies	N CH MOSFET, 20V, 19.5A, POWERPAK RoHS: Compliant	0	3000:£0.9060
SI7106DN-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8	Americas - 63000	3000:$0.4650 6000:$0.4390 12000:$0.4260 24000:$0.4190
SI7106DN-T1-E3 DISTI # XSFP00000063497	Vishay Siliconix	RoHS: Compliant	4038	3000:$1.3700 4038:$1.2500

图片	型号	描述
	Mfr.#: SI7106DN-T1-GE3 OMO.#: OMO-SI7106DN-T1-GE3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7106DN-T1-E3 OMO.#: OMO-SI7106DN-T1-E3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7106DN-T1-E3-CUT TAPE OMO.#: OMO-SI7106DN-T1-E3-CUT-TAPE-1190	全新原装
	Mfr.#: SI7106DN OMO.#: OMO-SI7106DN-1190	全新原装
	Mfr.#: SI7106DN-T1-GE3 OMO.#: OMO-SI7106DN-T1-GE3-VISHAY	MOSFET N-CH 20V 12.5A 1212-8
	Mfr.#: SI7106DN-TI-E3 OMO.#: OMO-SI7106DN-TI-E3-1190	全新原装
	Mfr.#: SI7106DNT1E3 OMO.#: OMO-SI7106DNT1E3-1190	Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: SI7106DN-T1-E3 OMO.#: OMO-SI7106DN-T1-E3-VISHAY	MOSFET N-CH 20V 12.5A 1212-8

SI7106DN-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes