RFD4N06L

RFD4N06L
Mfr. #:
RFD4N06L
制造商:
Rochester Electronics, LLC
描述:
Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
生命周期:
制造商新产品。
数据表:
RFD4N06L 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
Tags
RFD4N, RFD4, RFD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
RFD4N06LSM9A
DISTI # RFD4N06LSM9A-ND
ON SemiconductorMOSFET N-CH 60V 4A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    RFD4N06LSM9A
    DISTI # 512-RFD4N06LSM9A
    ON SemiconductorMOSFET 60V Single
    RoHS: Compliant
    0
      RFD4N06LSM9AFairchild Semiconductor CorporationPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant
      67132
      • 1000:$0.5100
      • 500:$0.5400
      • 100:$0.5600
      • 25:$0.5900
      • 1:$0.6300
      RFD4N06LHarris SemiconductorPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Not Compliant
      1424
      • 1000:$0.2800
      • 500:$0.2900
      • 100:$0.3000
      • 25:$0.3200
      • 1:$0.3400
      RFD4N06LHARTING Technology GroupPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Not Compliant
      975
        RFD4N06LSM9AS2457Fairchild Semiconductor Corporation 
        RoHS: Compliant
        38489
          图片 型号 描述
          RFD4N06LSM9A

          Mfr.#: RFD4N06LSM9A

          OMO.#: OMO-RFD4N06LSM9A

          MOSFET 60V Single
          RFD40N03

          Mfr.#: RFD40N03

          OMO.#: OMO-RFD40N03-1190

          全新原装
          RFD43F-NF

          Mfr.#: RFD43F-NF

          OMO.#: OMO-RFD43F-NF-1190

          全新原装
          RFD4N06L

          Mfr.#: RFD4N06L

          OMO.#: OMO-RFD4N06L-1190

          Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
          RFD4N06LSM

          Mfr.#: RFD4N06LSM

          OMO.#: OMO-RFD4N06LSM-1190

          全新原装
          RFD4N06LSM9A

          Mfr.#: RFD4N06LSM9A

          OMO.#: OMO-RFD4N06LSM9A-ON-SEMICONDUCTOR

          MOSFET N-CH 60V 4A DPAK
          RFD4N06LSM9AS2457

          Mfr.#: RFD4N06LSM9AS2457

          OMO.#: OMO-RFD4N06LSM9AS2457-1190

          全新原装
          可用性
          库存:
          Available
          订购:
          2500
          输入数量:
          RFD4N06L的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
          参考价格(美元)
          数量
          单价
          小计金额
          1
          US$0.00
          US$0.00
          10
          US$0.00
          US$0.00
          100
          US$0.00
          US$0.00
          500
          US$0.00
          US$0.00
          1000
          US$0.00
          US$0.00
          从...开始
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