IPP60R330P6XKSA1

IPP60R330P6XKSA1
Mfr. #:
IPP60R330P6XKSA1
制造商:
Infineon Technologies
描述:
MOSFET LOW POWER_LEGACY
生命周期:
制造商新产品。
数据表:
IPP60R330P6XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-220-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
600 V
Id - 连续漏极电流:
12 A
Rds On - 漏源电阻:
297 mOhms
Vgs th - 栅源阈值电压:
3.5 V
Vgs - 栅源电压:
20 V
Qg - 门电荷:
22 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
93 W
配置:
单身的
频道模式:
增强
商品名:
酷摩
打包:
管子
高度:
15.65 mm
长度:
10 mm
系列:
CoolMOS P6
晶体管类型:
1 N-Channel
宽度:
4.4 mm
品牌:
英飞凌科技
秋季时间:
7 ns
产品类别:
MOSFET
上升时间:
7 ns
出厂包装数量:
500
子类别:
MOSFET
典型关断延迟时间:
33 ns
典型的开启延迟时间:
12 ns
第 # 部分别名:
IPP60R330P6XKSA1 SP001017060
单位重量:
0.211644 oz
Tags
IPP60R3, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 12 A 330 mO 22 nC CoolMOS P6 Power Transistor - TO-220
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
***et
Trans MOSFET N-CH 600(Min)V 12A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 600V 12A TO220-3
***ark
Mosfet, N-Ch, 600V, 12A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.297Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 12A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.297ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:93W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P6 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 12A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.297ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:93W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P6 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
型号 制造商 描述 库存 价格
IPP60R330P6XKSA1
DISTI # IPP60R330P6XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V 12A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    IPP60R330P6XKSA1
    DISTI # 726-IPP60R330P6XKSA1
    Infineon Technologies AGMOSFET LOW POWER_LEGACY
    RoHS: Compliant
    0
      IPP60R330P6
      DISTI # 726-IPP60R330P6
      Infineon Technologies AGMOSFET LOW POWER_LEGACY
      RoHS: Compliant
      0
        IPP60R330P6XKSA1
        DISTI # 2781181
        Infineon Technologies AGMOSFET, N-CH, 600V, 12A, TO-220
        RoHS: Compliant
        0
        • 100:$2.0100
        • 25:$2.4500
        • 5:$2.8200
        IPP60R330P6XKSA1
        DISTI # 2781181
        Infineon Technologies AGMOSFET, N-CH, 600V, 12A, TO-2200
        • 500:£0.9100
        • 250:£0.9760
        • 100:£1.0400
        • 10:£1.3700
        • 1:£1.7300
        图片 型号 描述
        IPP60R330P6XKSA1

        Mfr.#: IPP60R330P6XKSA1

        OMO.#: OMO-IPP60R330P6XKSA1

        MOSFET LOW POWER_LEGACY
        IPP60R330P6

        Mfr.#: IPP60R330P6

        OMO.#: OMO-IPP60R330P6-1190

        MOSFET LOW POWER_LEGACY
        IPP60R330P6XKSA1

        Mfr.#: IPP60R330P6XKSA1

        OMO.#: OMO-IPP60R330P6XKSA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 600V 12A TO220-3
        可用性
        库存:
        Available
        订购:
        5000
        输入数量:
        IPP60R330P6XKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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